Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TP90H050WS

TP90H050WS

GANFET N-CH 900V 34A TO247-3

Transphorm
172 -

RFQ

TP90H050WS

Ficha técnica

Tube - Active N-Channel GaNFET (Cascode Gallium Nitride FET) 900 V 34A (Tc) 10V 63mOhm @ 22A, 10V 4.4V @ 700µA 17.5 nC @ 10 V ±20V 980 pF @ 600 V - 119W (Tc) -55°C ~ 150°C Through Hole
TP65H035WSQA

TP65H035WSQA

GANFET N-CH 650V 47.2A TO247-3

Transphorm
545 -

RFQ

TP65H035WSQA

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel GaNFET (Cascode Gallium Nitride FET) 650 V 47.2A (Tc) 10V 41mOhm @ 32A, 10V 4.5V @ 1mA 24 nC @ 10 V ±20V 1500 pF @ 400 V - 187W (Tc) -55°C ~ 175°C (TJ) Through Hole
TP65H015G5WS

TP65H015G5WS

650 V 95 A GAN FET

Transphorm
456 -

RFQ

TP65H015G5WS

Ficha técnica

Tube SuperGaN™ Active N-Channel GaNFET (Gallium Nitride) 650 V 93A (Tc) 10V 18mOhm @ 60A, 10V 4.8V @ 2mA 100 nC @ 10 V ±20V 5218 pF @ 400 V - 266W (Tc) -55°C ~ 150°C (TJ) Through Hole
TPH3208LSG

TPH3208LSG

GANFET N-CH 650V 20A 3PQFN

Transphorm
3,624 -

RFQ

TPH3208LSG

Ficha técnica

Tube - Obsolete N-Channel GaNFET (Gallium Nitride) 650 V 20A (Tc) 10V 130mOhm @ 14A, 8V 2.6V @ 300µA 42 nC @ 8 V ±18V 760 pF @ 400 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TPH3206PD

TPH3206PD

GANFET N-CH 600V 17A TO220AB

Transphorm
130 -

RFQ

TPH3206PD

Ficha técnica

Tube - Not For New Designs N-Channel GaNFET (Gallium Nitride) 600 V 17A (Tc) 10V 180mOhm @ 11A, 8V 2.6V @ 500µA 9.3 nC @ 4.5 V ±18V 760 pF @ 480 V - 96W (Tc) -55°C ~ 175°C (TJ) Through Hole
TP65H050WSQA

TP65H050WSQA

GANFET N-CH 650V 36A TO247-3

Transphorm
213 -

RFQ

TP65H050WSQA

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel GaNFET (Cascode Gallium Nitride FET) 650 V 36A (Tc) 10V 60mOhm @ 25A, 10V 4.8V @ 700µA 24 nC @ 10 V ±20V 1000 pF @ 400 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
TPH3205WSBQA

TPH3205WSBQA

GANFET N-CH 650V 35A TO247-3

Transphorm
364 -

RFQ

TPH3205WSBQA

Ficha técnica

Tube Automotive, AEC-Q101 Not For New Designs N-Channel GaNFET (Gallium Nitride) 650 V 35A (Tc) 10V 62mOhm @ 22A, 8V 2.6V @ 700µA 42 nC @ 8 V ±18V 2200 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
TPH3206LDG-TR

TPH3206LDG-TR

GANFET N-CH 600V 17A 3PQFN

Transphorm
3,285 -

RFQ

TPH3206LDG-TR

Ficha técnica

Tray - Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 17A (Tc) 8V 180mOhm @ 11A, 8V 2.6V @ 500µA 9.3 nC @ 4.5 V ±18V 760 pF @ 480 V - 96W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TP65H150G4LSG

TP65H150G4LSG

GAN FET N-CH 650V PQFN

Transphorm
2,379 -

RFQ

Tray - Active N-Channel GaNFET (Gallium Nitride) 650 V 13A (Tc) 10V 180mOhm @ 8.5A, 10V 4.8V @ 500µA 8 nC @ 10 V ±20V 598 pF @ 400 V - 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TP65H070LSG

TP65H070LSG

GANFET N-CH 650V 25A 3PQFN

Transphorm
2,036 -

RFQ

TP65H070LSG

Ficha técnica

Tube TP65H070L Discontinued at Mosen N-Channel GaNFET (Cascode Gallium Nitride FET) 650 V 25A (Tc) 10V 85mOhm @ 16A, 10V 4.8V @ 700µA 9.3 nC @ 10 V ±20V 600 pF @ 400 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TP65H150G4LSG-TR

TP65H150G4LSG-TR

650 V 13 A GAN FET

Transphorm
210 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel GaNFET (Gallium Nitride) 650 V 13A (Tc) 10V 180mOhm @ 8.5A, 10V 4.8V @ 500µA 8 nC @ 10 V ±20V 598 pF @ 400 V - 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TP65H050G4WS

TP65H050G4WS

650 V 34 A GAN FET

Transphorm
218 -

RFQ

TP65H050G4WS

Ficha técnica

Tube SuperGaN® Active N-Channel GaNFET (Gallium Nitride) 650 V 34A (Tc) 10V 60mOhm @ 22A, 10V 4.8V @ 700µA 24 nC @ 10 V ±20V 1000 pF @ 400 V - 119W (Tc) -55°C ~ 150°C (TJ) Through Hole
TP65H035G4WSQA

TP65H035G4WSQA

650 V 46.5 GAN FET

Transphorm
170 -

RFQ

TP65H035G4WSQA

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel GaNFET (Gallium Nitride) 650 V 47.2A (Tc) 10V 41mOhm @ 30A, 10V 4.8V @ 1mA 22 nC @ 10 V ±20V 1500 pF @ 400 V - 187W (Tc) -55°C ~ 175°C (TJ) Through Hole
TP65H150LSG

TP65H150LSG

GANFET N-CH 650V 15A 3PQFN

Transphorm
2,505 -

RFQ

TP65H150LSG

Ficha técnica

Tube - Obsolete N-Channel GaNFET (Gallium Nitride) 650 V 15A (Tc) 10V 180mOhm @ 10A, 10V 4.8V @ 500µA 7.1 nC @ 10 V ±20V 576 pF @ 400 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TPH3206LSGB

TPH3206LSGB

GANFET N-CH 650V 16A 3PQFN

Transphorm
3,413 -

RFQ

TPH3206LSGB

Ficha técnica

Tray - Obsolete N-Channel GaNFET (Gallium Nitride) 650 V 16A (Tc) 8V 180mOhm @ 10A, 8V 2.6V @ 500µA 6.2 nC @ 4.5 V ±18V 720 pF @ 480 V - 81W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TP65H480G4JSG-TR

TP65H480G4JSG-TR

GANFET N-CH 650V 3.6A 3PQFN

Transphorm
238 -

RFQ

TP65H480G4JSG-TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel GaNFET (Cascode Gallium Nitride FET) 650 V 3.6A (Tc) 8V 560mOhm @ 3.4A, 8V 2.8V @ 500µA 9 nC @ 8 V ±18V 760 pF @ 400 V - 13.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TPH3206PSB

TPH3206PSB

GANFET N-CH 650V 16A TO220AB

Transphorm
505 -

RFQ

TPH3206PSB

Ficha técnica

Tube - Obsolete N-Channel GaNFET (Gallium Nitride) 650 V 16A (Tc) 10V 180mOhm @ 10A, 8V 2.6V @ 500µA 6.2 nC @ 4.5 V ±18V 720 pF @ 480 V - 81W (Tc) -55°C ~ 150°C (TJ) Through Hole
TPH3208PS

TPH3208PS

GANFET N-CH 650V 20A TO220AB

Transphorm
572 -

RFQ

TPH3208PS

Ficha técnica

Tube - Obsolete N-Channel GaNFET (Cascode Gallium Nitride FET) 650 V 20A (Tc) 10V 130mOhm @ 13A, 8V 2.6V @ 300µA 14 nC @ 8 V ±18V 760 pF @ 400 V - 96W (Tc) -55°C ~ 150°C (TJ) Through Hole
TPH3208LDG

TPH3208LDG

GANFET N-CH 650V 20A 3PQFN

Transphorm
158 -

RFQ

TPH3208LDG

Ficha técnica

Tube - Obsolete N-Channel GaNFET (Gallium Nitride) 650 V 20A (Tc) 10V 130mOhm @ 13A, 8V 2.6V @ 300µA 14 nC @ 8 V ±18V 760 pF @ 400 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TP90H180PS

TP90H180PS

GANFET N-CH 900V 15A TO220AB

Transphorm
173 -

RFQ

TP90H180PS

Ficha técnica

Tube - Obsolete N-Channel GaNFET (Cascode Gallium Nitride FET) 900 V 15A (Tc) 10V 205mOhm @ 10A, 10V 2.6V @ 500µA 10 nC @ 8 V ±18V 780 pF @ 600 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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