Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI4896DY-T1-E3

SI4896DY-T1-E3

MOSFET N-CH 80V 6.7A 8SO

Vishay Siliconix
3,858 -

RFQ

SI4896DY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 6.7A (Ta) 6V, 10V 16.5mOhm @ 10A, 10V 2V @ 250µA (Min) 41 nC @ 10 V ±20V - - 1.56W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQJ401EP-T1_GE3

SQJ401EP-T1_GE3

MOSFET P-CH 12V 32A PPAK SO-8

Vishay Siliconix
2,057 -

RFQ

SQJ401EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 32A (Tc) 2.5V, 4.5V 6mOhm @ 15A, 4.5V 1.5V @ 250µA 164 nC @ 4.5 V ±8V 10015 pF @ 6 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7190DP-T1-GE3

SI7190DP-T1-GE3

MOSFET N-CH 250V 18.4A PPAK SO-8

Vishay Siliconix
3,603 -

RFQ

SI7190DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 250 V 18.4A (Tc) 6V, 10V 118mOhm @ 4.4A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 2214 pF @ 125 V - 5.4W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4434ADY-T1-GE3

SI4434ADY-T1-GE3

MOSFET N-CH 250V 2.8A/4.1A 8SO

Vishay Siliconix
3,561 -

RFQ

SI4434ADY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 250 V 2.8A (Ta), 4.1A (Tc) 7.5V, 10V 150mOhm @ 2.8A, 10V 4V @ 250µA 16.5 nC @ 10 V ±20V 600 pF @ 125 V - 2.9W (Ta), 6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7115DN-T1-GE3

SI7115DN-T1-GE3

MOSFET P-CH 150V 8.9A PPAK1212-8

Vishay Siliconix
3,451 -

RFQ

SI7115DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 150 V 8.9A (Tc) 6V, 10V 295mOhm @ 4A, 10V 4V @ 250µA 42 nC @ 10 V ±20V 1190 pF @ 50 V - 3.7W (Ta), 52W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SI7115DN-T1-E3

SI7115DN-T1-E3

MOSFET P-CH 150V 8.9A PPAK1212-8

Vishay Siliconix
2,247 -

RFQ

SI7115DN-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 150 V 8.9A (Tc) 6V, 10V 295mOhm @ 4A, 10V 4V @ 250µA 42 nC @ 10 V ±20V 1190 pF @ 50 V - 52W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SIDR638DP-T1-GE3

SIDR638DP-T1-GE3

MOSFET N-CH 40V 100A PPAK SO-8DC

Vishay Siliconix
2,880 -

RFQ

SIDR638DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 0.88mOhm @ 20A, 10V 2.3V @ 250µA 204 nC @ 10 V +20V, -16V 10500 pF @ 20 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9010PBF

IRFR9010PBF

MOSFET P-CH 50V 5.3A DPAK

Vishay Siliconix
3,332 -

RFQ

IRFR9010PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 50 V 5.3A (Tc) 10V 500mOhm @ 2.8A, 10V 4V @ 250µA 9.1 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM40081EL_GE3

SQM40081EL_GE3

MOSFET P-CH 40V 50A TO263

Vishay Siliconix
3,669 -

RFQ

SQM40081EL_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 8.5mOhm @ 25A, 10V 2.5V @ 250µA 230 nC @ 10 V ±20V 9950 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR870ADP-T1-GE3

SIR870ADP-T1-GE3

MOSFET N-CH 100V 60A PPAK SO-8

Vishay Siliconix
2,352 -

RFQ

SIR870ADP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 4.5V, 10V 6.6mOhm @ 20A, 10V 3V @ 250µA 80 nC @ 10 V ±20V 2866 pF @ 50 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR140DP-T1-RE3

SIR140DP-T1-RE3

MOSFET N-CH 25V 71.9A/100A PPAK

Vishay Siliconix
3,411 -

RFQ

SIR140DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 25 V 71.9A (Ta), 100A (Tc) 4.5V, 10V 0.67mOhm @ 20A, 10V 2.1V @ 250µA 170 nC @ 10 V +20V, -16V 8150 pF @ 10 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLZ14PBF-BE3

IRLZ14PBF-BE3

MOSFET N-CH 60V 10A TO220AB

Vishay Siliconix
2,908 -

RFQ

IRLZ14PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) - 200mOhm @ 6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
SI4490DY-T1-E3

SI4490DY-T1-E3

MOSFET N-CH 200V 2.85A 8SO

Vishay Siliconix
2,227 -

RFQ

SI4490DY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 2.85A (Ta) 6V, 10V 80mOhm @ 4A, 10V 2V @ 250µA (Min) 42 nC @ 10 V ±20V - - 1.56W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7135DP-T1-GE3

SI7135DP-T1-GE3

MOSFET P-CH 30V 60A PPAK SO-8

Vishay Siliconix
3,421 -

RFQ

SI7135DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 3.9mOhm @ 20A, 10V 3V @ 250µA 250 nC @ 10 V ±20V 8650 pF @ 15 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4488DY-T1-E3

SI4488DY-T1-E3

MOSFET N-CH 150V 3.5A 8SO

Vishay Siliconix
3,926 -

RFQ

SI4488DY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 3.5A (Ta) 10V 50mOhm @ 5A, 10V 2V @ 250µA (Min) 36 nC @ 10 V ±20V - - 1.56W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR9220TRLPBF

IRFR9220TRLPBF

MOSFET P-CH 200V 3.6A DPAK

Vishay Siliconix
2,639 -

RFQ

IRFR9220TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 340 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR668ADP-T1-RE3

SIR668ADP-T1-RE3

MOSFET N-CH 100V 93.6A PPAK SO-8

Vishay Siliconix
3,329 -

RFQ

SIR668ADP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 93.6A (Tc) 7.5V, 10V 4.8mOhm @ 20A, 10V 4V @ 250µA 81 nC @ 10 V ±20V 3750 pF @ 50 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF620PBF

IRF620PBF

MOSFET N-CH 200V 5.2A TO220AB

Vishay Siliconix
3,506 -

RFQ

IRF620PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 10V 800mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF520PBF

IRF520PBF

MOSFET N-CH 100V 9.2A TO220AB

Vishay Siliconix
2,235 -

RFQ

IRF520PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 10V 270mOhm @ 5.5A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9Z34STRLPBF

IRF9Z34STRLPBF

MOSFET P-CH 60V 18A D2PAK

Vishay Siliconix
2,884 -

RFQ

IRF9Z34STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 10V 140mOhm @ 11A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1100 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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