Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFBC40S

IRFBC40S

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
3,979 -

RFQ

IRFBC40S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBF20S

IRFBF20S

MOSFET N-CH 900V 1.7A D2PAK

Vishay Siliconix
2,278 -

RFQ

IRFBF20S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 3.1W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFD010

IRFD010

MOSFET N-CH 50V 1.7A 4DIP

Vishay Siliconix
3,455 -

RFQ

IRFD010

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 1.7A (Tc) 10V 200mOhm @ 860mA, 10V 4V @ 250µA 13 nC @ 10 V ±20V 250 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD014

IRFD014

MOSFET N-CH 60V 1.7A 4DIP

Vishay Siliconix
2,440 -

RFQ

IRFD014

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 1.7A (Ta) 10V 200mOhm @ 1A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 310 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRFD024

IRFD024

MOSFET N-CH 60V 2.5A 4DIP

Vishay Siliconix
3,836 -

RFQ

IRFD024

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 2.5A (Ta) 10V 100mOhm @ 1.5A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRFD214

IRFD214

MOSFET N-CH 250V 450MA 4DIP

Vishay Siliconix
3,859 -

RFQ

IRFD214

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 450mA (Ta) 10V 2Ohm @ 270mA, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
IRFD224

IRFD224

MOSFET N-CH 250V 630MA 4DIP

Vishay Siliconix
3,789 -

RFQ

IRFD224

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 630mA (Ta) 10V 1.1Ohm @ 380mA, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
IRFD310

IRFD310

MOSFET N-CH 400V 350MA 4DIP

Vishay Siliconix
3,366 -

RFQ

IRFD310

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 350mA (Ta) 10V 3.6Ohm @ 210mA, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
IRFD320

IRFD320

MOSFET N-CH 400V 490MA 4DIP

Vishay Siliconix
3,462 -

RFQ

IRFD320

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 490mA (Ta) 10V 1.8Ohm @ 210mA, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
IRFD420

IRFD420

MOSFET N-CH 500V 370MA 4DIP

Vishay Siliconix
3,215 -

RFQ

IRFD420

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 370mA (Ta) 10V 3Ohm @ 220mA, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
IRFD9010

IRFD9010

MOSFET P-CH 50V 1.1A 4DIP

Vishay Siliconix
3,689 -

RFQ

IRFD9010

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 50 V 1.1A (Tc) 10V 500mOhm @ 580mA, 10V 4V @ 250µA 11 nC @ 10 V ±20V 240 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD9014

IRFD9014

MOSFET P-CH 60V 1.1A 4DIP

Vishay Siliconix
2,797 -

RFQ

IRFD9014

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 1.1A (Ta) 10V 500mOhm @ 660mA, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRFD9020

IRFD9020

MOSFET P-CH 60V 1.6A 4DIP

Vishay Siliconix
2,920 -

RFQ

IRFD9020

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 1.6A (Ta) 10V 280mOhm @ 960mA, 10V 4V @ 1µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRFD9024

IRFD9024

MOSFET P-CH 60V 1.6A 4DIP

Vishay Siliconix
2,207 -

RFQ

IRFD9024

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 1.6A (Ta) 10V 280mOhm @ 960mA, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRFDC20

IRFDC20

MOSFET N-CH 600V 320MA 4DIP

Vishay Siliconix
2,275 -

RFQ

IRFDC20

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 320mA (Ta) 10V 4.4Ohm @ 190mA, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
IRFI510G

IRFI510G

MOSFET N-CH 100V 4.5A TO220-3

Vishay Siliconix
2,754 -

RFQ

IRFI510G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 4.5A (Tc) 10V 540mOhm @ 2.7A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 27W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI530G

IRFI530G

MOSFET N-CH 100V 9.7A TO220-3

Vishay Siliconix
2,945 -

RFQ

IRFI530G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.7A (Tc) 10V 160mOhm @ 5.8A, 10V 4V @ 250µA 33 nC @ 10 V ±20V 670 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI540G

IRFI540G

MOSFET N-CH 100V 17A TO220-3

Vishay Siliconix
2,464 -

RFQ

IRFI540G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 10V 77mOhm @ 10A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI614G

IRFI614G

MOSFET N-CH 250V 2.1A TO220-3

Vishay Siliconix
3,484 -

RFQ

IRFI614G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 2.1A (Tc) 10V 2Ohm @ 1.3A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 23W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI620G

IRFI620G

MOSFET N-CH 200V 4.1A TO220-3

Vishay Siliconix
2,029 -

RFQ

IRFI620G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 4.1A (Tc) 10V 800mOhm @ 2.5A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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