Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFI9630GPBF

IRFI9630GPBF

MOSFET P-CH 200V 4.3A TO220-3

Vishay Siliconix
148 -

RFQ

IRFI9630GPBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 4.3A (Tc) 10V 800mOhm @ 2.6A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 700 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA17N80AE-GE3

SIHA17N80AE-GE3

MOSFET N-CH 800V 7A TO220

Vishay Siliconix
2,875 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 1260 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ44RPBF

IRFZ44RPBF

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix
2,456 -

RFQ

IRFZ44RPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF740SPBF

IRF740SPBF

MOSFET N-CH 400V 10A D2PAK

Vishay Siliconix
423 -

RFQ

IRF740SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1400 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBF30PBF

IRFBF30PBF

MOSFET N-CH 900V 3.6A TO220AB

Vishay Siliconix
980 -

RFQ

IRFBF30PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI630GPBF

IRFI630GPBF

MOSFET N-CH 200V 5.9A TO220-3

Vishay Siliconix
580 -

RFQ

IRFI630GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 5.9A (Tc) 10V 400mOhm @ 3.5A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB9N60APBF

IRFB9N60APBF

MOSFET N-CH 600V 9.2A TO220AB

Vishay Siliconix
990 -

RFQ

IRFB9N60APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI9634GPBF

IRFI9634GPBF

MOSFET P-CH 250V 4.1A TO220-3

Vishay Siliconix
2,014 -

RFQ

IRFI9634GPBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 250 V 4.1A (Tc) 10V 1Ohm @ 2.5A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 680 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG25N40D-E3

SIHG25N40D-E3

MOSFET N-CH 400V 25A TO247AC

Vishay Siliconix
2,877 -

RFQ

SIHG25N40D-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 25A (Tc) 10V 170mOhm @ 13A, 10V 5V @ 250µA 88 nC @ 10 V ±30V 1707 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB17N50LPBF

IRFB17N50LPBF

MOSFET N-CH 500V 16A TO220AB

Vishay Siliconix
2,618 -

RFQ

IRFB17N50LPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 320mOhm @ 9.9A, 10V 5V @ 250µA 130 nC @ 10 V ±30V 2760 pF @ 25 V - 220W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG30N60E-GE3

SIHG30N60E-GE3

MOSFET N-CH 600V 29A TO247AC

Vishay Siliconix
2,691 -

RFQ

SIHG30N60E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±30V 2600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP85N10-10-GE3

SUP85N10-10-GE3

MOSFET N-CH 100V 85A TO220AB

Vishay Siliconix
2,306 -

RFQ

SUP85N10-10-GE3

Ficha técnica

Tube TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 85A (Tc) 4.5V, 10V 10.5mOhm @ 30A, 10V 3V @ 250µA 160 nC @ 10 V ±20V 6550 pF @ 25 V - 3.75W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUP70090E-GE3

SUP70090E-GE3

MOSFET N-CH 100V 50A TO220AB

Vishay Siliconix
2,638 -

RFQ

SUP70090E-GE3

Ficha técnica

Bulk ThunderFET® Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 7.5V, 10V 8.9mOhm @ 20A, 10V 4V @ 250µA 50 nC @ 10 V ±20V 1950 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHG039N60EF-GE3

SIHG039N60EF-GE3

MOSFET N-CH 600V 61A TO247AC

Vishay Siliconix
3,251 -

RFQ

SIHG039N60EF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 61A (Tc) 10V 40mOhm @ 32A, 10V 5V @ 250µA 126 nC @ 10 V ±30V 4323 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP6N40D-GE3

SIHP6N40D-GE3

MOSFET N-CH 400V 6A TO220AB

Vishay Siliconix
288 -

RFQ

SIHP6N40D-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 5V @ 250µA 18 nC @ 10 V ±30V 311 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF830APBF-BE3

IRF830APBF-BE3

MOSFET N-CH 500V 5A TO220AB

Vishay Siliconix
1,000 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 620 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI520GPBF

IRFI520GPBF

MOSFET N-CH 100V 7.2A TO220-3

Vishay Siliconix
3,523 -

RFQ

IRFI520GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 7.2A (Tc) 10V 270mOhm @ 4.3A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9Z14SPBF

IRF9Z14SPBF

MOSFET P-CH 60V 6.7A D2PAK

Vishay Siliconix
1,000 -

RFQ

IRF9Z14SPBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) 10V 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHF10N40D-E3

SIHF10N40D-E3

MOSFET N-CH 400V 10A TO220

Vishay Siliconix
652 -

RFQ

SIHF10N40D-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 600mOhm @ 5A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 526 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF614SPBF

IRF614SPBF

MOSFET N-CH 250V 2.7A D2PAK

Vishay Siliconix
198 -

RFQ

IRF614SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 2Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 3.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes en todo el mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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