Más categorías de productos

Transistores - FET, MOSFET - RF

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	ProductStatus	TransistorType	Frequency	Gain	Voltage-Test	CurrentRating(Amps)	NoiseFigure	Current-Test	Power-Output	Voltage-Rated
MRFE6VP6600NR3 RF MOSFET LDMOS DL 50V OM780-4 NXP USA Inc.	185	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS (Dual)	230MHz	24.7dB	50 V	-	-	100 mA	600W	133 V
MRF7S24250NR3 RF MOSFET LDMOS 30V OM780-2 NXP USA Inc.	149	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	LDMOS	2.45GHz	14.7dB	30 V	-	-	100 mA	256W	65 V
MRFE6VP5600HR6 FET RF 2CH 130V 230MHZ NI1230 NXP USA Inc.	3,941	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS (Dual)	230MHz	25dB	50 V	-	-	100 mA	600W	130 V
A2G35S160-01SR3 AIRFAST RF POWER GAN TRANSISTOR NXP USA Inc.	223	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS	3.4GHz ~ 3.6GHz	15.7dB	48 V	-	-	190 mA	51dBm	125 V
AFT21H350W03SR6 FET RF 2CH 65V 2.11GHZ NI1230S NXP USA Inc.	150	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	LDMOS	2.11GHz	16.4dB	28 V	-	-	750 mA	63W	65 V
AFT31150NR5 RF MOSFET LDMOS 32V OM-780-2 NXP USA Inc.	2,354	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS	2.7GHz ~ 3.1GHz	17.2dB	32 V	10µA	-	100 mA	150W	65 V
MRF1K50GNR5 RF MOSFET LDMOS 50 OM1230G NXP USA Inc.	2,943	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS	1.8MHz ~ 500MHz	23dB	50 V	-	-	-	1500W	50 V
MRFX1K80GNR5 600MHZ 1.8KW OM1230G-4L NXP USA Inc.	2,055	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS	1.8MHz ~ 470MHz	24dB	65 V	-	-	-	1800W	-
MRFE6VP8600HR5 FET RF 2CH 130V 860MHZ NI-1230 NXP USA Inc.	3,097	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	LDMOS (Dual)	860MHz	19.3dB	50 V	-	-	1.4 A	125W	130 V
MRF13750HR5 RF MOSFET LDMOS DL 50V NI-1230 NXP USA Inc.	3,664	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS (Dual)	700MHz ~ 1.3GHz	20.6dB	50 V	10µA	-	-	650W	105 V
MMRF2010NR1 TRANS RF LDMOS 250W 50V NXP USA Inc.	419	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS	1.09GHz	32.1dB	50 V	10µA	-	80 mA	250W	100 V
MMRF1312HR5 TRANS 900-1215MHZ 1000W PEAK 50V NXP USA Inc.	3,098	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS (Dual)	1.03GHz	19.6dB	50 V	-	-	100 mA	1000W	112 V
MMRF1312HSR5 TRANS 960-1215MHZ 1000W PEAK 50V NXP USA Inc.	2,724	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS (Dual)	1.034GHz	19.6dB	50 V	-	-	100 mA	1000W	112 V
MHT1807T1 NO DESCRIPTION NXP USA Inc.	3,003	-	RFQ		Bulk	*	Not For New Designs	-	-	-	-	-	-	-	-	-
BF1108,215 BF1108 - SILICON RF SWITCHES NXP USA Inc.	3,503	-	RFQ	Ficha técnica	Bulk	*	Active	-	-	-	-	-	-	-	-	-
MHT1801A NO DESCRIPTION NXP USA Inc.	3,609	-	RFQ		Bulk	*	Not For New Designs	-	-	-	-	-	-	-	-	-
MHT1801B NO DESCRIPTION NXP USA Inc.	2,853	-	RFQ		Bulk	*	Not For New Designs	-	-	-	-	-	-	-	-	-
AFT27S010NT1 FET RF NCH 65V 2700MHZ PLD1.5W NXP USA Inc.	2,645	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS	2.17GHz	21.7dB	28 V	-	-	90 mA	1.26W	65 V
MRF6V2150NR1 RF ULTRA HIGH FREQUENCY BAND, N- NXP USA Inc.	3,008	-	RFQ	Ficha técnica	Bulk	-	Active	LDMOS	220MHz	25dB	50 V	-	-	450 mA	150W	110 V
MRF8P20100HSR3 RF 2-ELEMENT, S BAND, N-CHANNEL NXP USA Inc.	747	-	RFQ	Ficha técnica	Bulk	*	Active	-	-	-	-	-	-	-	-	-