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Transistores - FET, MOSFET - Arreglos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDPC5018SGMOSFET 2N-CH 30V PWRCLIP56 onsemi |
2,088 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | PowerTrench® | Active | 2 N-Channel (Dual) Asymmetrical | Standard | 30V | 17A, 32A | 5mOhm @ 17A, 10V | 3V @ 250µA | 24nC @ 10V | 1715pF @ 15V | 1W, 1.1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
STS8DN3LLH5MOSFET 2N-CH 30V 10A 8SO STMicroelectronics |
3,798 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | STripFET™ V | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 10A | 19mOhm @ 5A, 10V | 1V @ 250µA | 5.4nC @ 4.5V | 724pF @ 25V | 2.7W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI4904DY-T1-GE3MOSFET 2N-CH 40V 8A 8-SOIC Vishay Siliconix |
2,724 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Standard | 40V | 8A | 16mOhm @ 5A, 10V | 2V @ 250µA | 85nC @ 10V | 2390pF @ 20V | 3.25W | -55°C ~ 150°C (TJ) | Surface Mount |
|
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SI4904DY-T1-E3MOSFET 2N-CH 40V 8A 8-SOIC Vishay Siliconix |
2,227 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Standard | 40V | 8A | 16mOhm @ 5A, 10V | 2V @ 250µA | 85nC @ 10V | 2390pF @ 20V | 3.25W | -55°C ~ 150°C (TJ) | Surface Mount |
|
TSM8568CS RLGMOSFET N/P-CH 30V 15A/13A 8SOP Taiwan Semiconductor Corporation |
2,964 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N and P-Channel | Standard | 30V | 15A (Tc), 13A (Tc) | 16mOhm @ 8A, 10V, 24mOhm @ 7A, 10V | 2.5V @ 250µA | 7nC @ 4.5V, 11nC @ 4.5V | 646pF @ 15V, 1089pF @ 15V | 6W | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSC0910NDIATMA1MOSFET 2N-CH 25V 16A/31A TISON8 Infineon Technologies |
2,139 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 4.5V Drive | 25V | 11A, 31A | 4.6mOhm @ 25A, 10V | 2V @ 250µA | 6.6nC @ 4.5V | 4500pF @ 12V | 1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
ALD1116SALMOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc. |
3,801 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
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ALD1117SALMOSFET 2P-CH 10.6V 8SOIC Advanced Linear Devices Inc. |
155 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
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ALD111933SALMOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc. |
300 | - |
RFQ |
Ficha técnica |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 5.9V | 3.35V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
ALD1116PALMOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc. |
133 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
ALD1107PBLMOSFET 4P-CH 10.6V 14DIP Advanced Linear Devices Inc. |
946 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 4 P-Channel, Matched Pair | Standard | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
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ALD1106PBLMOSFET 4N-CH 10.6V 14DIP Advanced Linear Devices Inc. |
701 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
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ALD1105PBLMOSFET 2N/2P-CH 10.6V 14DIP Advanced Linear Devices Inc. |
169 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 N and 2 P-Channel Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
SLA5073MOSFET 6N-CH 60V 5A 15-SIP Sanken |
123 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 6 N-Channel (3-Phase Bridge) | Logic Level Gate | 60V | 5A | 300mOhm @ 3A, 4V | 2V @ 250µA | - | 320pF @ 10V | 5W | 150°C (TJ) | Through Hole |
|
|
ALD1103PBLMOSFET 2N/2P-CH 10.6V 14DIP Advanced Linear Devices Inc. |
2,587 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 N and 2 P-Channel Matched Pair | Standard | 10.6V | 40mA, 16mA | 75Ohm @ 5V | 1V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
CCB032M12FM31200V SIC 6-PACK MODULE Wolfspeed, Inc. |
3,131 | - |
RFQ |
Ficha técnica |
Tray | WolfPACK™ | Active | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 40A | 42.6mOhm @ 30A, 15V | 3.6V @ 11.5mA | 118nC @ 15V | 3400pF @ 800V | 10mW | -40°C ~ 150°C (TJ) | Chassis Mount |
|
CAS120M12BM2MOSFET 2N-CH 1200V 193A MODULE Wolfspeed, Inc. |
516 | - |
RFQ |
Ficha técnica |
Bulk | Z-Rec® | Not For New Designs | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 193A (Tc) | 16mOhm @ 120A, 20V | 2.6V @ 6mA (Typ) | 378nC @ 20V | 6470pF @ 800V | 925W | -40°C ~ 150°C (TJ) | Chassis Mount |
|
CAB400M12XM3MOSFET 2 N-CH 1200V MODULE Wolfspeed, Inc. |
3,200 | - |
RFQ |
Ficha técnica |
Box | - | Active | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 395A (Tc) | 5.3mOhm @ 400A, 15V | 3.6V @ 92mA | 908nC @ 15V | 2450pF @ 800V | - | -40°C ~ 175°C (TJ) | Chassis Mount |
|
CAB450M12XM31.2KV 450A SIC HALF BRIDGE MOD Wolfspeed, Inc. |
779 | - |
RFQ |
Ficha técnica |
Box | - | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 450A | 3.7mOhm @ 450A, 15V | 3.6V @ 132mA | 1330nC @ 15V | 38000pF @ 800V | 850W | -40°C ~ 175°C (TJ) | Chassis Mount |
|
CAS300M12BM2MOSFET 2N-CH 1200V 404A MODULE Wolfspeed, Inc. |
3,121 | - |
RFQ |
Ficha técnica |
Bulk | Z-FET™ | Not For New Designs | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 423A (Tc) | 5.7mOhm @ 300A, 20V | 2.3V @ 15mA (Typ) | 1025nC @ 20V | 19500pF @ 800V | 1660W | 150°C (TJ) | Chassis Mount |
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