Transistores - FET, MOSFET - Arreglos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
AUIRFU8403-701TRL

AUIRFU8403-701TRL

AUTOMOTIVE HEXFET POWER MOSFET

International Rectifier
2,139 -

RFQ

AUIRFU8403-701TRL

Ficha técnica

Bulk * Active - - - - - - - - - - -
EL7222CSE9044-T7

EL7222CSE9044-T7

BUFFER/INVERTER BASED MOSFET DRI

Intersil
2,272 -

RFQ

EL7222CSE9044-T7

Ficha técnica

Bulk * Active - - - - - - - - - - -
2SJ634-E

2SJ634-E

8A, 60V, P-CHANNEL MOSFET

onsemi
2,944 -

RFQ

Bulk * Active - - - - - - - - - - -
RJK0216DPA-00#J53

RJK0216DPA-00#J53

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc
3,903 -

RFQ

Bulk - Active 2 N-Channel (Half Bridge) Logic Level Gate, 4.5V Drive 25V 15A, 32A 9.2mOhm @ 7.5A, 10V - 6.2nC @ 4.5V 1130pF @ 10V 10W, 20W 150°C (TJ) Surface Mount
FDZ2554P

FDZ2554P

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,682 -

RFQ

FDZ2554P

Ficha técnica

Bulk PowerTrench® Obsolete 2 P-Channel (Dual) Logic Level Gate 20V 6.5A 28mOhm @ 6.5A, 4.5V 1.5V @ 250µA 20nC @ 4.5V 1900pF @ 10V 2.1W -55°C ~ 150°C (TJ) Surface Mount
FDS8936A

FDS8936A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,702 -

RFQ

FDS8936A

Ficha técnica

Bulk PowerTrench® Active 2 N-Channel (Dual) Standard 30V 6A (Ta) 28mOhm @ 6A, 10V 3V @ 250µA 27nC @ 10V 650pF @ 15V 900mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SP600

SP600

HALF BRIDGE BASED MOSFET DRIVER

Harris Corporation
2,397 -

RFQ

Bulk * Active - - - - - - - - - - -
2SK3706

2SK3706

POWER MOSFET FOR MOTOR DRIVERS

onsemi
2,463 -

RFQ

2SK3706

Ficha técnica

Bulk * Active - - - - - - - - - - -
2SK3706-MG5

2SK3706-MG5

FOR 100V MOTOR DRIVERS

Sanyo
3,209 -

RFQ

2SK3706-MG5

Ficha técnica

Bulk * Active - - - - - - - - - - -
FD6M045N06

FD6M045N06

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,656 -

RFQ

FD6M045N06

Ficha técnica

Tube Power-SPM™ Obsolete 2 N-Channel (Dual) Standard 60V 60A 4.5mOhm @ 40A, 10V 4V @ 250µA 87nC @ 10V 3890pF @ 25V - -40°C ~ 150°C (TJ) Through Hole
2SJ409-90STR

2SJ409-90STR

20A, 100V, P-CHANNEL MOSFET

Renesas Electronics America Inc
3,655 -

RFQ

Bulk * Active - - - - - - - - - - -
QS8J11TCR

QS8J11TCR

MOSFET 2P-CH 12V 3.5A TSMT8

Rohm Semiconductor
2,305 -

RFQ

QS8J11TCR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 2 P-Channel (Dual) Logic Level Gate, 1.5V Drive 12V 3.5A 43mOhm @ 3.5A, 4.5V 1V @ 1mA 22nC @ 4.5V 2600pF @ 6V 550mW 150°C (TJ) Surface Mount
SI5513CDC-T1-E3

SI5513CDC-T1-E3

MOSFET N/P-CH 20V 4A 1206-8

Vishay Siliconix
2,560 -

RFQ

SI5513CDC-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N and P-Channel Logic Level Gate 20V 4A, 3.7A 55mOhm @ 4.3A, 4.5V 1.5V @ 250µA 4.2nC @ 5V 285pF @ 10V 3.1W -55°C ~ 150°C (TJ) Surface Mount
DMN2008LFU-7

DMN2008LFU-7

MOSFET 2N-CHA 20V 14.5A DFN2030

Diodes Incorporated
595 -

RFQ

DMN2008LFU-7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Common Drain Standard 20V 14.5A 5.4mOhm @ 5.5A, 4.5V 1.5V @ 250A 42.3nC @ 10V 1418pF @ 10V 1W -55°C ~ 150°C (TJ) Surface Mount
ZDM4306NTC

ZDM4306NTC

MOSFET 2N-CH 60V 2A SOT-223-8

Diodes Incorporated
3,160 -

RFQ

ZDM4306NTC

Ficha técnica

Tape & Reel (TR) - Obsolete 2 N-Channel (Dual) Standard 60V 2A 330mOhm @ 3A, 10V 3V @ 1mA - 350pF @ 25V 3W -55°C ~ 150°C (TJ) Surface Mount
NTLJD3115PT1G

NTLJD3115PT1G

MOSFET 2P-CH 20V 2.3A 6-WDFN

onsemi
3,887 -

RFQ

NTLJD3115PT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 2 P-Channel (Dual) Logic Level Gate 20V 2.3A 100mOhm @ 2A, 4.5V 1V @ 250µA 6.2nC @ 4.5V 531pF @ 10V 710mW -55°C ~ 150°C (TJ) Surface Mount
ALD114913SAL

ALD114913SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.
249 -

RFQ

ALD114913SAL

Ficha técnica

Tube EPAD® Active 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 2.7V 1.26V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD1107SBL

ALD1107SBL

MOSFET 4P-CH 10.6V 14SOIC

Advanced Linear Devices Inc.
114 -

RFQ

ALD1107SBL

Ficha técnica

Tube - Active 4 P-Channel, Matched Pair Standard 10.6V - 1800Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
SLA5086

SLA5086

MOSFET 5P-CH 60V 5A 12-SIP

Sanken
418 -

RFQ

SLA5086

Ficha técnica

Tube - Not For New Designs 5 P-Channel, Common Source Logic Level Gate 60V 5A 220mOhm @ 3A, 10V 2V @ 250µA - 790pF @ 10V 5W 150°C (TJ) Through Hole
ALD1101PAL

ALD1101PAL

MOSFET 2N-CH 10.6V 8DIP

Advanced Linear Devices Inc.
179 -

RFQ

ALD1101PAL

Ficha técnica

Tube - Active 2 N-Channel (Dual) Matched Pair Standard 10.6V - 75Ohm @ 5V 1V @ 10µA - - 500mW 0°C ~ 70°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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