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Transistores - FET, MOSFET - Arreglos

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	ProductStatus	FETType	FETFeature	DraintoSourceVoltage(Vdss)	Current-ContinuousDrain(Id)@25°C	RdsOn(Max)@IdVgs	Vgs(th)(Max)@Id	GateCharge(Qg)(Max)@Vgs	InputCapacitance(Ciss)(Max)@Vds	Power-Max	OperatingTemperature	MountingType
SLA5060 MOSFET 3N/3P-CH 60V 6A 12-SIP Sanken	637	-	RFQ	Ficha técnica	Bulk	-	Active	3 N and 3 P-Channel (3-Phase Bridge)	Logic Level Gate	60V	6A	220mOhm @ 3A, 4V	-	-	320pF @ 10V	5W	150°C (TJ)	Through Hole
FDMS8090 MOSFET 2N-CH 100V 10A PWR56 onsemi	288	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	PowerTrench®	Active	2 N-Channel (Dual)	Logic Level Gate	100V	10A	13mOhm @ 10A, 10V	4V @ 250µA	27nC @ 10V	1800pF @ 50V	2.2W	-55°C ~ 150°C (TJ)	Surface Mount
EPC2100 GAN TRANS ASYMMETRICAL HALF BRID EPC	402	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	eGaN®	Active	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	30V	10A (Ta), 40A (Ta)	8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V	2.5V @ 4mA, 2.5V @ 16mA	4.9nC @ 15V, 19nC @ 15V	475pF @ 15V, 1960pF @ 15V	-	-40°C ~ 150°C (TJ)	Surface Mount
EPC2101 GAN TRANS ASYMMETRICAL HALF BRID EPC	193	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	eGaN®	Active	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	60V	9.5A, 38A	11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V	2.5V @ 3mA, 2.5V @ 12mA	2.7nC @ 5V, 12nC @ 5V	300pF @ 30V, 1200pF @ 30V	-	-40°C ~ 150°C (TJ)	Surface Mount
DF23MR12W1M1B11BPSA1 MOSFET MOD 1200V 25A Infineon Technologies	3,787	-	RFQ	Ficha técnica	Tray	CoolSiC™+	Last Time Buy	2 N-Channel (Dual)	Silicon Carbide (SiC)	1200V (1.2kV)	25A (Tj)	45mOhm @ 25A, 15V (Typ)	5.55V @ 10mA	62nC @ 15V	1840pF @ 800V	20mW	-40°C ~ 150°C (TJ)	Chassis Mount
DF23MR12W1M1PB11BPSA1 MOSFET MODULE 1200V Infineon Technologies	3,395	-	RFQ	Ficha técnica	Tray	EasyPACK™	Last Time Buy	2 N-Channel (Dual)	Silicon Carbide (SiC)	1200V (1.2kV)	25A (Tj)	45mOhm @ 25A, 15V	5.55V @ 10mA	62nC @ 15V	1840pF @ 800V	20mW	-40°C ~ 150°C (TJ)	Chassis Mount
FBG20N04AC GAN FET HEMT200V 4A COTS 4FSMD-A EPC Space, LLC	2,428	-	RFQ	Ficha técnica	Tray	eGaN®	Active	-	Logic Level Gate	200V	4A (Tc)	130mOhm @ 4A, 5V	2.8V @ 1mA	3nC @ 5V	150pF @ 100V	-	-55°C ~ 150°C (TJ)	Surface Mount
WAB300M12BM3 1200 V, 300 A HALF-BRIDGE MODULE Wolfspeed, Inc.	3,803	-	RFQ	Ficha técnica	Bulk	-	Active	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	382A (Tc)	5.2mOhm @ 300A, 15V	3.6V @ 92mA	908nC @ 15V	24500pF @ 1000V	-	-40°C ~ 175°C (TJ)	Chassis Mount
G4953S P+P -30V,RD(MAX)<60M@-10V,RD(MAX Goford Semiconductor	3,893	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	2 P-Channel (Dual)	Standard	30V	5A (Tc)	60mOhm @ 5A, 10V	3V @ 250µA	11nC @ 10V	520pF @ 15V	2.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
PMDXB1200UPEZ NEXPERIA PMDXB1200UPE - 30V, DUA NXP Semiconductors	2,772	-	RFQ	Ficha técnica	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-
FDZ1827NZ SMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor	2,181	-	RFQ	Ficha técnica	Bulk	PowerTrench®	Active	2 N-Channel (Dual) Common Drain	Standard	20V	10A (Ta)	13mOhm @ 1A, 4.5V	1.2V @ 250µA	24nC @ 10V	2055pF @ 10V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount
PJT7002H_R1_00001 60V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	2,590	-	RFQ		Tape & Reel (TR),Cut Tape (CT)	-	Active	2 N-Channel (Dual)	-	60V	250mA (Ta)	5Ohm @ 300mA, 10V	3V @ 250µA	1.3nC @ 4.5V	22pF @ 25V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount
G20N06D52 N60V,RD(MAX)<30M@10V,RD(MAX)<40M Goford Semiconductor	2,405	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	2 N-Channel (Dual)	Standard	60V	20A (Ta)	30mOhm @ 20A, 10V	2.5V @ 250µA	25nC @ 10V	1220pF @ 30V	45W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount
FDC6320C SMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor	2,255	-	RFQ	Ficha técnica	Bulk	-	Active	N and P-Channel	Logic Level Gate	25V	220mA, 120mA	4Ohm @ 400mA, 4.5V	1.5V @ 250µA	0.4nC @ 4.5V	9.5pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount
UPA1981TE-T1-A UPA1981TE-T1-A - N-CHANNEL/P-CHA Renesas	2,058	-	RFQ		Bulk	-	Obsolete	N and P-Channel	Standard	8V	2.8A (Ta)	70mOhm @ 2.8A, 5V, 105mOhm @ 1.9A, 2.5V	200mV @ 2.8A, 200mV @ 1.9A	-	-	1W (Ta)	150°C	Surface Mount
FDC6302P SMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor	3,529	-	RFQ	Ficha técnica	Bulk	-	Active	2 P-Channel (Dual)	Logic Level Gate	25V	120mA	10Ohm @ 200mA, 4.5V	1.5V @ 250µA	0.31nC @ 4.5V	11pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount
PJX8601_R1_00001 COMPLEMENTARY ENHANCEMENT MODE M Panjit International Inc.	3,469	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	N and P-Channel Complementary	Standard	20V	500mA (Ta)	400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V	900mV @ 250µA, 1V @ 250µA	1.4nC @ 4.5V	67pF @ 10V, 38pF @ 10V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount
PJT138K-AU_R1_000A1 50V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	2,759	-	RFQ		Tape & Reel (TR),Cut Tape (CT)	-	Active	2 N-Channel (Dual)	Standard	50V	360mA (Ta)	1.6Ohm @ 500mA, 10V	1.5V @ 250µA	1nC @ 4.5V	50pF @ 25V	236mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount
FDMA1025P POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor	3,386	-	RFQ	Ficha técnica	Bulk	PowerTrench®	Active	2 P-Channel (Dual)	Logic Level Gate	20V	3.1A	155mOhm @ 3.1A, 4.5V	1.5V @ 250µA	4.8nC @ 4.5V	450pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount
2N7002PS/ZLX NEXPERIA 2N7002PS - 60 V, 320 MA NXP Semiconductors	2,655	-	RFQ	Ficha técnica	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-