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Transistores - FET, MOSFET - Arreglos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ALD310702ASCLMOSFET 4 P-CH 8V 16SOIC Advanced Linear Devices Inc. |
3,100 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 180mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Surface Mount |
|
|
ALD310704ASCLMOSFET 4 P-CH 8V 16SOIC Advanced Linear Devices Inc. |
2,775 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Surface Mount |
|
|
ALD310708ASCLMOSFET 4 P-CH 8V 16SOIC Advanced Linear Devices Inc. |
2,576 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 780mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Surface Mount |
|
ALD210808APCLMOSFET 4N-CH 10.6V 0.08A 16DIP Advanced Linear Devices Inc. |
2,553 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
ALD210808ASCLMOSFET 4N-CH 10.6V 0.08A 16SOIC Advanced Linear Devices Inc. |
3,040 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
ALD212908APALMOSFET 2N-CH 10.6V 0.08A 8DIP Advanced Linear Devices Inc. |
3,539 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
ALD212908ASALMOSFET 2N-CH 10.6V 0.08A 8SOIC Advanced Linear Devices Inc. |
2,576 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD310704PCLMOSFET 4 P-CH 8V 16DIP Advanced Linear Devices Inc. |
2,261 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole |
|
|
ALD310708PCLMOSFET 4 P-CH 8V 16DIP Advanced Linear Devices Inc. |
3,580 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 780mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole |
|
|
ALD1101BPALMOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc. |
3,117 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD1102BPALMOSFET 2P-CH 10.6V 8DIP Advanced Linear Devices Inc. |
2,844 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD114804APCLMOSFET 4N-CH 10.6V 16DIP Advanced Linear Devices Inc. |
2,870 | - |
RFQ |
Ficha técnica |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD110808APCLMOSFET 4N-CH 10.6V 16DIP Advanced Linear Devices Inc. |
2,767 | - |
RFQ |
Ficha técnica |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 810mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD110808ASCLMOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc. |
3,782 | - |
RFQ |
Ficha técnica |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 810mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD310702APCLMOSFET 4 P-CH 8V 16DIP Advanced Linear Devices Inc. |
3,700 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 180mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole |
|
|
ALD310704APCLMOSFET 4 P-CH 8V 16DIP Advanced Linear Devices Inc. |
2,671 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole |
|
|
ALD310708APCLMOSFET 4 P-CH 8V 16DIP Advanced Linear Devices Inc. |
2,255 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 780mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole |
|
|
ALD1101APALMOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc. |
3,946 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD1102APALMOSFET 2P-CH 10.6V 8DIP Advanced Linear Devices Inc. |
3,091 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
ALD111933MALMOSFET 2N-CH 10.6V 8MSOP Advanced Linear Devices Inc. |
3,420 | - |
RFQ |
Ficha técnica |
Tube | EPAD® | Obsolete | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 5.9V | 3.35V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
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