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Transistores - FET, MOSFET - Arreglos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ALD110914PALMOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc. |
3,708 | - |
RFQ |
Ficha técnica |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 5.4V | 1.42V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
ALD1108ESCLMOSFET 4N-CH 10V 16SOIC Advanced Linear Devices Inc. |
3,307 | - |
RFQ |
Ficha técnica |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Standard | 10V | - | 500Ohm @ 5V | 1.01V @ 1µA | - | 25pF @ 5V | 600mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD114804SCLMOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc. |
3,410 | - |
RFQ |
Ficha técnica |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 360mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
ALD210808PCLMOSFET 4N-CH 10.6V 0.08A 16DIP Advanced Linear Devices Inc. |
3,127 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD210808SCLMOSFET 4N-CH 10.6V 0.08A 16SOIC Advanced Linear Devices Inc. |
3,408 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD110802PCLMOSFET 4N-CH 10.6V 16DIP Advanced Linear Devices Inc. |
3,660 | - |
RFQ |
Ficha técnica |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 4.2V | 220mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD110802SCLMOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc. |
2,073 | - |
RFQ |
Ficha técnica |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 4.2V | 220mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD110804PCLMOSFET 4N-CH 10.6V 16DIP Advanced Linear Devices Inc. |
3,386 | - |
RFQ |
Ficha técnica |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.4V | 420mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD110804SCLMOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc. |
2,710 | - |
RFQ |
Ficha técnica |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.4V | 420mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD110814PCLMOSFET 4N-CH 10.6V 16DIP Advanced Linear Devices Inc. |
3,392 | - |
RFQ |
Ficha técnica |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 5.4V | 1.42V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD114813SCLMOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc. |
2,828 | - |
RFQ |
Ficha técnica |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD110808PCLMOSFET 4N-CH 10.6V 16DIP Advanced Linear Devices Inc. |
3,968 | - |
RFQ |
Ficha técnica |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 820mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD114935PALMOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc. |
3,353 | - |
RFQ |
Ficha técnica |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
ALD310700SCLMOSFET 4 P-CH 8V 16SOIC Advanced Linear Devices Inc. |
2,862 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Surface Mount |
|
|
ALD310702SCLMOSFET 4 P-CH 8V 16SOIC Advanced Linear Devices Inc. |
2,249 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 180mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Surface Mount |
|
|
ALD310704SCLMOSFET 4 P-CH 8V 16SOIC Advanced Linear Devices Inc. |
2,662 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Surface Mount |
|
|
ALD114904APALMOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc. |
2,819 | - |
RFQ |
Ficha técnica |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
ALD114904ASALMOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc. |
2,412 | - |
RFQ |
Ficha técnica |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD212900ASALMOSFET 2N-CH 10.6V 0.08A 8SOIC Advanced Linear Devices Inc. |
3,602 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | 14Ohm | 10mV @ 20µA | - | 30pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD210800PCLMOSFET 4N-CH 10.6V 0.08A 16DIP Advanced Linear Devices Inc. |
2,775 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | 25Ohm | 20mV @ 10µA | - | 15pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
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