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Transistores - FET, MOSFET - Arreglos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SI7923DN-T1-E3MOSFET 2P-CH 30V 4.3A 1212-8 Vishay Siliconix |
2,320 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 P-Channel (Dual) | Logic Level Gate | 30V | 4.3A | 47mOhm @ 6.4A, 10V | 3V @ 250µA | 21nC @ 10V | - | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount |
|
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SI7923DN-T1-GE3MOSFET 2P-CH 30V 4.3A 1212-8 Vishay Siliconix |
3,207 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 P-Channel (Dual) | Logic Level Gate | 30V | 4.3A | 47mOhm @ 6.4A, 10V | 3V @ 250µA | 21nC @ 10V | - | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI7913DN-T1-E3MOSFET 2P-CH 20V 5A 1212-8 Vishay Siliconix |
3,077 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | 5A | 37mOhm @ 7.4A, 4.5V | 1V @ 250µA | 24nC @ 4.5V | - | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIZF916DT-T1-GE3MOSFET N-CH DUAL 30V Vishay Siliconix |
3,762 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | 2 N-Channel (Dual) | Standard | 30V | 23A (Ta), 40A (Tc) | 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V | 2.4V @ 250µA, 2.2V @ 250µA | 22nC @ 10V, 95nC @ 10V | 1060pF @ 15V, 4320pF @ 15V | 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIZF920DT-T1-GE3MOSFET DL N-CH 30V POWERPAIR 6X5 Vishay Siliconix |
2,618 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | 2 N-Channel (Dual), Schottky | Standard | 30V | 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc) | 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V | 2.4V @ 250µA, 2.2V @ 250µA | 29nC @ 10V, 125nC @ 10V | 1300pF @ 15V, 5230pF @ 15V | 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI4943BDY-T1-E3MOSFET 2P-CH 20V 6.3A 8-SOIC Vishay Siliconix |
3,688 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | 6.3A | 19mOhm @ 8.4A, 10V | 3V @ 250µA | 25nC @ 5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI1922EDH-T1-GE3MOSFET 2N-CH 20V 1.3A SOT-363 Vishay Siliconix |
2,117 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 1.3A | 198mOhm @ 1A, 4.5V | 1V @ 250µA | 2.5nC @ 8V | - | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI1926DL-T1-GE3MOSFET 2N-CH 60V 0.37A SOT363 Vishay Siliconix |
2,903 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 60V | 370mA | 1.4Ohm @ 340mA, 10V | 2.5V @ 250µA | 1.4nC @ 10V | 18.5pF @ 30V | 510mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI1016X-T1-GE3MOSFET N/P-CH 20V SC89-6 Vishay Siliconix |
2,855 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N and P-Channel | Logic Level Gate | 20V | 485mA, 370mA | 700mOhm @ 600mA, 4.5V | 1V @ 250µA | 0.75nC @ 4.5V | - | 250mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI1034X-T1-GE3MOSFET 2N-CH 20V 0.18A SC89-6 Vishay Siliconix |
3,734 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 180mA | 5Ohm @ 200mA, 4.5V | 1.2V @ 250µA | 0.75nC @ 4.5V | - | 250mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SQ1922AEEH-T1_GE3MOSFET N-CH DUAL 20V .85A SOT-36 Vishay Siliconix |
3,238 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | 2 N-Channel (Dual) | Standard | 20V | 850mA (Tc) | 300mOhm @ 400mA, 4.5V | 2.5V @ 250µA | 1.2nC @ 4.5V | 60pF @ 10V | 1.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
SI9933CDY-T1-GE3MOSFET 2P-CH 20V 4A 8-SOIC Vishay Siliconix |
3,338 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 58mOhm @ 4.8A, 4.5V | 1.4V @ 250µA | 26nC @ 10V | 665pF @ 10V | 3.1W | -50°C ~ 150°C (TJ) | Surface Mount |
|
SIZ730DT-T1-GE3MOSFET 2N-CH 30V 16A 6-POWERPAIR Vishay Siliconix |
314 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 16A, 35A | 9.3mOhm @ 15A, 10V | 2.2V @ 250µA | 24nC @ 10V | 830pF @ 15V | 27W, 48W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI7980DP-T1-GE3MOSFET 2N-CH 20V 8A PPAK SO-8 Vishay Siliconix |
3,809 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | 2 N-Channel (Half Bridge) | Standard | 20V | 8A | 22mOhm @ 5A, 10V | 2.5V @ 250µA | 27nC @ 10V | 1010pF @ 10V | 19.8W, 21.9W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI4340CDY-T1-E3MOSFET 2N-CH 20V 14.1A 14-SOIC Vishay Siliconix |
612 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 20V | 14.1A, 20A | 9.4mOhm @ 11.5A, 10V | 3V @ 250µA | 32nC @ 10V | 1300pF @ 10V | 3W, 5.4W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI5902BDC-T1-GE3MOSFET 2N-CH 30V 4A 1206-8 Vishay Siliconix |
970 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4A | 65mOhm @ 3.1A, 10V | 3V @ 250µA | 7nC @ 10V | 220pF @ 15V | 3.12W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SISF04DN-T1-GE3MOSFET DUAL N-CH 30V PPAK 1212-8 Vishay Siliconix |
861 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | 2 N-Channel (Dual) Common Drain | Standard | 30V | 30A (Ta), 108A (Tc) | 4mOhm @ 7A, 10V | 2.3V @ 250µA | 60nC @ 10V | 2600pF @ 15V | 5.2W (Ta), 69.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SISF00DN-T1-GE3MOSFET DUAL N-CH 30V POWERPAK 12 Vishay Siliconix |
3,802 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | 2 N-Channel (Dual) Common Drain | Standard | 30V | 60A (Tc) | 5mOhm @ 10A, 10V | 2.1V @ 250µA | 53nC @ 10V | 2700pF @ 15V | 69.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SQ4282EY-T1_BE3MOSFET 2 N-CHANNEL 30V 8A 8SOIC Vishay Siliconix |
797 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | 2 N-Channel (Dual) | Standard | 30V | 8A (Tc) | 12.3mOhm @ 15A, 10V | 2.5V @ 250µA | 47nC @ 10V | 2367pF @ 15V | 3.9W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
|
|
SQ4282EY-T1_GE3MOSFET 2 N-CHANNEL 30V 8A 8SOIC Vishay Siliconix |
725 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | 2 N-Channel (Dual) | Standard | 30V | 8A (Tc) | 12.3mOhm @ 15A, 10V | 2.5V @ 250µA | 47nC @ 10V | 2367pF @ 15V | 3.9W | -55°C ~ 175°C (TJ) | Surface Mount |
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