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Transistores - FET, MOSFET - Arreglos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SI5513CDC-T1-E3MOSFET N/P-CH 20V 4A 1206-8 Vishay Siliconix |
2,560 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N and P-Channel | Logic Level Gate | 20V | 4A, 3.7A | 55mOhm @ 4.3A, 4.5V | 1.5V @ 250µA | 4.2nC @ 5V | 285pF @ 10V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIZ980BDT-T1-GE3MOSFET DUAL N-CH 30V PPAIR 6 X 5 Vishay Siliconix |
3,111 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | 2 N-Channel (Dual), Schottky | Standard | 30V | 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc) | 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V | 2.2V @ 250µA | 18nC @ 10V, 79nC @ 10V | 790pF @ 15V, 3655pF @ 15V | 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI4963BDY-T1-E3MOSFET 2P-CH 20V 4.9A 8-SOIC Vishay Siliconix |
3,964 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.9A | 32mOhm @ 6.5A, 4.5V | 1.4V @ 250µA | 21nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIZF5302DT-T1-RE3DUAL N-CHANNEL 30 V (D-S) MOSFET Vishay Siliconix |
2,102 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen V | Active | 2 N-Channel (Dual) | Standard | 30V | 28.1A (Ta), 100A (Tc) | 3.2mOhm @ 10A, 10V | 2V @ 250µA | 22.2nC @ 10V | 1030pF @ 15V | 3.8W (Ta), 48.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIZF5300DT-T1-GE3DUAL N-CHANNEL 30 V (D-S) MOSFET Vishay Siliconix |
2,487 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen V | Active | 2 N-Channel (Dual) Common Source | Standard | 30V | 35A (Ta), 125A (Tc) | 2.43mOhm @ 10A, 10V | 2V @ 250µA | 32nC @ 10V | 1480pF @ 15V | 4.5W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI1023CX-T1-GE3MOSFET 2P-CH 20V SC89-6 Vishay Siliconix |
3,113 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | - | 756mOhm @ 350mA, 4.5V | 1V @ 250µA | 2.5nC @ 4.5V | 45pF @ 10V | 220mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
SQ1912EH-T1_GE3MOSFET 2 N-CH 20V 800MA SC70-6 Vishay Siliconix |
3,379 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | 2 N-Channel (Dual) | Standard | 20V | 800mA (Tc) | 280mOhm @ 1.2A, 4.5V | 1.5V @ 250µA | 1.15nC @ 4.5V | 75pF @ 10V | 1.5W | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
SQ4532AEY-T1_GE3MOSFET N/P-CH 30V 7.3/5.3A 8SOIC Vishay Siliconix |
3,138 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N and P-Channel | Standard | 30V | 7.3A (Tc), 5.3A (Tc) | 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V | 2.5V @ 250µA | 7.8nC @ 10V, 10.2nC @ 10V | 535pF @ 15V, 528pF @ 15V | 3.3W | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
SIZ328DT-T1-GE3MOSFET DUAL N-CHAN 25V POWERPAIR Vishay Siliconix |
2,486 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | 2 N-Channel (Dual) | Standard | 25V | 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc) | 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V | 2.5V @ 250µA | 6.9nC @ 10V, 11.3nC @ 10V | 325pF @ 10V, 600pF @ 10V | 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI5504BDC-T1-GE3MOSFET N/P-CH 30V 4A 1206-8 Vishay Siliconix |
2,192 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N and P-Channel | Logic Level Gate | 30V | 4A, 3.7A | 65mOhm @ 3.1A, 10V | 3V @ 250µA | 7nC @ 10V | 220pF @ 15V | 3.12W, 3.1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI5504BDC-T1-E3MOSFET N/P-CH 30V 4A 1206-8 Vishay Siliconix |
3,531 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N and P-Channel | Logic Level Gate | 30V | 4A, 3.7A | 65mOhm @ 3.1A, 10V | 3V @ 250µA | 7nC @ 10V | 220pF @ 15V | 3.12W, 3.1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIZ350DT-T1-GE3MOSFET DUAL N-CHAN 30V POWERPAIR Vishay Siliconix |
2,553 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | 2 N-Channel (Dual) | Standard | 30V | 18.5A (Ta), 30A (Tc) | 6.75mOhm @ 15A, 10V | 2.4V @ 250µA | 20.3nC @ 10V | 940pF @ 15V | 3.7W (Ta), 16.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIZ342DT-T1-GE3MOSFET DL N-CH 30V POWERPAIR3X3 Vishay Siliconix |
2,726 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | - | 30V | 15.7A (Ta), 100A (Tc) | 11.5mOhm @ 14A, 10V | 2.4V @ 250µA | 20nC @ 10V | 650pF @ 15V | 3.6W, 4.3W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIZ704DT-T1-GE3MOSFET 2N-CH 30V 12A PPAK 1212-8 Vishay Siliconix |
3,466 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 12A, 16A | 24mOhm @ 7.8A, 10V | 2.5V @ 250µA | 12nC @ 10V | 435pF @ 15V | 20W, 30W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIZF300DT-T1-GE3MOSFET DUAL N-CHAN 30V PPAIR 3X3 Vishay Siliconix |
2,895 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | 2 N-Channel (Dual) | Standard | 30V | 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc) | 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V | 2.2V @ 250µA | 22nC @ 10V, 62nC @ 10V | 1100pF @ 15V, 3150pF @ 15V | 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI6562CDQ-T1-GE3MOSFET N/P-CH 20V 6.7A 8-TSSOP Vishay Siliconix |
3,594 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N and P-Channel | Logic Level Gate | 20V | 6.7A, 6.1A | 22mOhm @ 5.7A, 4.5V | 1.5V @ 250µA | 23nC @ 10V | 850pF @ 10V | 1.6W, 1.7W | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIZ926DT-T1-GE3MOSFET 2 N-CH 25V 8-POWERPAIR Vishay Siliconix |
2,288 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | 2 N-Channel (Dual) | Standard | 25V | 40A (Tc), 60A (Tc) | 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V | 2.2V @ 250µA | 19nC @ 10V, 41nC @ 10V | 925pF @ 10V, 2150pF @ 10V | 20.2W, 40W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI4202DY-T1-GE3MOSFET 2N-CH 30V 12.1A 8SO Vishay Siliconix |
3,349 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 12.1A | 14mOhm @ 8A, 10V | 2.5V @ 250µA | 17nC @ 10V | 710pF @ 15V | 3.7W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI5908DC-T1-E3MOSFET 2N-CH 20V 4.4A 1206-8 Vishay Siliconix |
2,906 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4.4A | 40mOhm @ 4.4A, 4.5V | 1V @ 250µA | 7.5nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIZ980DT-T1-GE3MOSFET 2 N-CH 30V 8-POWERPAIR Vishay Siliconix |
2,660 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual), Schottky | Standard | 30V | 20A (Tc), 60A (Tc) | 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V | 2.2V @ 250µA | 8.1nC @ 4.5V, 35nC @ 4.5V | 930pF @ 15V, 4600pF @ 15V | 20W, 66W | -55°C ~ 150°C (TJ) | Surface Mount |
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