+86 075582561136
Subir BOM
PMIC - Controladores de Puerta
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | DrivenConfiguration | ChannelType | NumberofDrivers | GateType | Voltage-Supply | LogicVoltage-VILVIH | Current-PeakOutput(SourceSink) | InputType | HighSideVoltage-Max(Bootstrap) | Rise/FallTime(Typ) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MIC4452VMIC GATE DRVR LOW-SIDE 8SOIC Microchip Technology |
3,084 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 12A, 12A | Non-Inverting | - | 20ns, 24ns | -40°C ~ 125°C (TA) | Surface Mount |
|
|
TC4452VOAIC GATE DRVR LOW-SIDE 8SOIC Microchip Technology |
3,264 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 13A, 13A | Non-Inverting | - | 30ns, 32ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
TMC6200-TAIC GATE DRVR HALF-BRIDGE 48TQFP Trinamic Motion Control GmbH |
3,067 | - |
RFQ |
Ficha técnica |
Tray | - | Active | Half-Bridge | 3-Phase | 6 | N-Channel MOSFET | 10V ~ 60V | - | - | CMOS | 85 V | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount |
|
FAN7080M-GF085IC GATE DRVR HALF-BRIDGE 8SOIC onsemi |
560 | - |
RFQ |
Ficha técnica |
Bulk,Tube | Automotive, AEC-Q100 | Active | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 5.5V ~ 20V | 0.8V, 2.7V | 300mA, 600mA | Non-Inverting | 600 V | 40ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
LM5111-1M/NOPBIC GATE DRVR LOW-SIDE 8SOIC Texas Instruments |
3,414 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel MOSFET | 3.5V ~ 14V | 0.8V, 2.2V | 3A, 5A | Non-Inverting | - | 14ns, 12ns | -40°C ~ 125°C (TJ) | Surface Mount |
|
|
IR21271SPBFIC GATE DRVR HI/LOW SIDE 8SOIC Infineon Technologies |
3,546 | - |
RFQ |
Ficha técnica |
Bulk,Tube | - | Active | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 9V ~ 20V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
EL7242CSZ-T7IC GATE DRVR LOW-SIDE 8SOIC Renesas Electronics America Inc |
2,527 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2.4V | 2A, 2A | Inverting, Non-Inverting | - | 10ns, 10ns | -40°C ~ 125°C (TJ) | Surface Mount |
|
|
LTC1693-2IS8#TRPBFIC GATE DRVR HI/LOW SIDE 8SOIC Analog Devices Inc. |
3,997 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | High-Side or Low-Side | Independent | 2 | N-Channel MOSFET | 4.5V ~ 13.2V | 1.7V, 2.2V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 16ns, 16ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
MIC4451YNIC GATE DRVR LOW-SIDE 8DIP Microchip Technology |
2,404 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 12A, 12A | Inverting | - | 20ns, 24ns | -40°C ~ 85°C (TA) | Through Hole |
|
IRS2113SPBFIC GATE DRVR HALF-BRIDGE 16SOIC Infineon Technologies |
2,028 | - |
RFQ |
Ficha técnica |
Bulk,Tube | - | Active | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 2.5A, 2.5A | Non-Inverting | 600 V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IXDD609SIIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
2,929 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
MIC5020YMIC GATE DRVR LOW-SIDE 8SOIC Microchip Technology |
2,562 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Single | 1 | N-Channel MOSFET | 11V ~ 50V | 0.8V, 2V | - | Non-Inverting | - | 700ns, 500ns | -40°C ~ 85°C (TA) | Surface Mount |
|
|
IRS2110SPBFIC GATE DRVR HALF-BRIDGE 16SOIC Infineon Technologies |
2,022 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 2.5A, 2.5A | Non-Inverting | 500 V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
FAN7171M-F085IC GATE DRVR HIGH-SIDE 8SOIC onsemi |
2,423 | - |
RFQ |
Ficha técnica |
Bulk,Tube | Automotive, AEC-Q100 | Active | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 4A, 4A | Non-Inverting | 600 V | 25ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
TC4424CPAIC GATE DRVR LOW-SIDE 8DIP Microchip Technology |
2,048 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 3A, 3A | Non-Inverting | - | 23ns, 25ns | 0°C ~ 150°C (TJ) | Through Hole |
|
UCC27211DDAIC GATE DRVR HALF-BRIDGE 8SOPWR Texas Instruments |
2,974 | - |
RFQ |
Ficha técnica |
Bulk,Tube | - | Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 17V | 1.3V, 2.8V | 4A, 4A | Non-Inverting | 120 V | 7.2ns, 5.5ns | -40°C ~ 140°C (TJ) | Surface Mount |
|
|
IR2011SPBFIC GATE DRVR HI/LOW SIDE 8SOIC Infineon Technologies |
2,724 | - |
RFQ |
Ficha técnica |
Bulk,Tube | - | Active | High-Side or Low-Side | Independent | 2 | N-Channel MOSFET | 10V ~ 20V | 0.7V, 2.2V | 1A, 1A | Inverting | 200 V | 35ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
TC4452VMFIC GATE DRVR LOW-SIDE 8DFN Microchip Technology |
2,698 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 13A, 13A | Non-Inverting | - | 30ns, 32ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2101PBFIC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
2,062 | - |
RFQ |
Ficha técnica |
Bulk,Tube | - | Active | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600 V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole |
|
MIC4451ZTIC GATE DRVR LOW-SIDE TO220-5 Microchip Technology |
3,320 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 12A, 12A | Inverting | - | 20ns, 24ns | 0°C ~ 70°C (TA) | Through Hole |
- 1500+ Promedio diario de RFQ
- 20,000.000 Unidad estándar de producto
- 1800+ Fabricantes en todo el mundo
- 15,000+ Almacén en inventario
