PMIC - Controladores de Puerta

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
LT1336CS#PBF

LT1336CS#PBF

IC GATE DRVR HALF-BRIDGE 16SOIC

Analog Devices Inc.
629 -

RFQ

LT1336CS#PBF

Ficha técnica

Tube - Active Half-Bridge Independent 2 N-Channel MOSFET 10V ~ 15V 0.8V, 2V 1.5A, 1.5A Non-Inverting 60 V 130ns, 60ns 0°C ~ 125°C (TJ) Surface Mount
IR2133SPBF

IR2133SPBF

IC GATE DRVR HALF-BRIDGE 28SOIC

Infineon Technologies
2,284 -

RFQ

IR2133SPBF

Ficha técnica

Tube - Active Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.2V 250mA, 500mA Inverting 600 V 90ns, 40ns 125°C (TJ) Surface Mount
IXDN630CI

IXDN630CI

IC GATE DRVR LOW-SIDE TO220-5

IXYS Integrated Circuits Division
3,983 -

RFQ

IXDN630CI

Ficha técnica

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 12.5V ~ 35V 0.8V, 3.5V 30A, 30A Non-Inverting - 11ns, 11ns -55°C ~ 150°C (TJ) Through Hole
LT1161IN#PBF

LT1161IN#PBF

IC GATE DRVR HIGH-SIDE 20DIP

Analog Devices Inc.
3,674 -

RFQ

LT1161IN#PBF

Ficha técnica

Tube - Active High-Side Independent 4 N-Channel MOSFET 8V ~ 48V 0.8V, 2V - Non-Inverting - - -40°C ~ 150°C (TJ) Through Hole
IR2233SPBF

IR2233SPBF

IC GATE DRVR HALF-BRIDGE 28SOIC

Infineon Technologies
3,266 -

RFQ

IR2233SPBF

Ficha técnica

Bulk,Tube - Active Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2V 250mA, 500mA Inverting 1200 V 90ns, 40ns 125°C (TJ) Surface Mount
LTC1255IS8#PBF

LTC1255IS8#PBF

IC GATE DRVR HIGH-SIDE 8SOIC

Analog Devices Inc.
2,381 -

RFQ

LTC1255IS8#PBF

Ficha técnica

Tube - Active High-Side Independent 2 N-Channel MOSFET 9V ~ 24V 0.8V, 2V - Non-Inverting - - -40°C ~ 85°C (TA) Surface Mount
MC33GD3100EK

MC33GD3100EK

IGBT GATE DRIVE IC

NXP USA Inc.
2,107 -

RFQ

MC33GD3100EK

Ficha técnica

Tube - Active Half-Bridge Single 1 IGBT, N-Channel MOSFET 5V - 15A, 15A - - - -40°C ~ 125°C (TA) Surface Mount
LTC1156CSW#PBF

LTC1156CSW#PBF

IC GATE DRVR HIGH-SIDE 16SOIC

Analog Devices Inc.
3,390 -

RFQ

LTC1156CSW#PBF

Ficha técnica

Tube - Active High-Side Independent 4 N-Channel MOSFET 4.5V ~ 18V 0.8V, 2V - Non-Inverting - - 0°C ~ 70°C (TA) Surface Mount
VLA567-11R

VLA567-11R

PWR MGMT MOSFET/PWR DRIVER

Powerex Inc.
2,630 -

RFQ

VLA567-11R

Ficha técnica

Bulk - Active Half-Bridge Independent 2 IGBT 14.2V ~ 15.8V - - Non-Inverting - 400ns, 300ns -20°C ~ 70°C (TA) Through Hole
2SP0115T2C0-12

2SP0115T2C0-12

IC GATE DRVR HALF-BRIDGE MODULE

Power Integrations
2,978 -

RFQ

2SP0115T2C0-12

Ficha técnica

Tray SCALE™-2 Active Half-Bridge Independent 2 IGBT 14.5V ~ 15.5V - 8A, 15A - 1200 V 5ns, 10ns -40°C ~ 85°C (TA) Surface Mount
2SC0435T2G1-17

2SC0435T2G1-17

IC GATE DRVR HI/LOW SIDE MODULE

Power Integrations
3,003 -

RFQ

2SC0435T2G1-17

Ficha técnica

Tray SCALE™-2 Active High-Side or Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 14.5V ~ 15.5V - 35A, 35A - 1700 V 20ns, 20ns -40°C ~ 85°C (TA) Surface Mount
1SP0335D2S1-65

1SP0335D2S1-65

IC GATE DRVR HI/LOW SIDE MODULE

Power Integrations
2,079 -

RFQ

1SP0335D2S1-65

Ficha técnica

Bulk SCALE™-2 Active High-Side or Low-Side Single 1 IGBT 23.5V ~ 26.5V - 35A, 35A - 6500 V 9ns, 30ns -40°C ~ 85°C (TA) Surface Mount
1SC2060P2A0-17

1SC2060P2A0-17

IC GATE DRVR HI/LOW SIDE MODULE

Power Integrations
3,385 -

RFQ

1SC2060P2A0-17

Ficha técnica

Bulk SCALE™-2 Active High-Side or Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 14.5V ~ 15.5V - 60A, 60A - - 10ns, 15ns -40°C ~ 85°C (TA) Surface Mount
1SC0450E2B0-45

1SC0450E2B0-45

IC GATE DRVR HI/LOW SIDE MODULE

Power Integrations
2,689 -

RFQ

Tray SCALE™-2 Active High-Side or Low-Side Single 1 IGBT 14.5V ~ 15.5V - 50A, 50A - 4500 V 30ns, 25ns -40°C ~ 85°C (TA) Surface Mount
1SP0335V2M1-45

1SP0335V2M1-45

IC GATE DRVR HI/LOW SIDE MODULE

Power Integrations
3,288 -

RFQ

1SP0335V2M1-45

Ficha técnica

Bulk SCALE™-2 Active High-Side or Low-Side Single 1 IGBT 23.5V ~ 26.5V - 35A, 35A - 4500 V 9ns, 30ns -40°C ~ 85°C (TA) Surface Mount
NCP81161MNTBG

NCP81161MNTBG

IC GATE DRVR HALF-BRIDGE 8DFN

onsemi
2,375 -

RFQ

NCP81161MNTBG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Active Half-Bridge Synchronous 2 N-Channel MOSFET 4.5V ~ 13.2V 1V, 2V - Non-Inverting 35 V 16ns, 11ns 0°C ~ 150°C (TJ) Surface Mount
NCP5901BMNTBG

NCP5901BMNTBG

IC GATE DRVR HALF-BRIDGE 8DFN

onsemi
2,009 -

RFQ

NCP5901BMNTBG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Active Half-Bridge Synchronous 2 N-Channel MOSFET 4.5V ~ 13.2V 1V, 2V - Non-Inverting 35 V 16ns, 11ns 0°C ~ 150°C (TJ) Surface Mount
ZXGD3113W6-7

ZXGD3113W6-7

IC GATE DRVR LOW-SIDE SOT23-6

Diodes Incorporated
2,920 -

RFQ

ZXGD3113W6-7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Low-Side Synchronous 1 N-Channel MOSFET 3.5V ~ 40V - 1.5A, 3A - - 360ns, 210ns -40°C ~ 150°C (TJ) Surface Mount
ZXGD3001E6TA

ZXGD3001E6TA

IC GATE DRVR LOW-SIDE SOT23-6

Diodes Incorporated
2,573 -

RFQ

ZXGD3001E6TA

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Low-Side Single 1 IGBT, N-Channel MOSFET 12V (Max) - 9A, 9A Non-Inverting - 7.3ns, 11ns -55°C ~ 150°C (TJ) Surface Mount
DGD2005S8-13

DGD2005S8-13

IC GATE DRV HALF-BRIDGE 8SO 2.5K

Diodes Incorporated
2,104 -

RFQ

DGD2005S8-13

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Half-Bridge Independent 2 N-Channel MOSFET 10V ~ 20V 0.6V, 2.5V 290mA, 600mA Non-Inverting 200 V 100ns, 35ns -40°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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