PMIC - Controladores de Puerta

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
IXDI614SITR

IXDI614SITR

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division
2,470 -

RFQ

IXDI614SITR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 14A, 14A Inverting - 25ns, 18ns -55°C ~ 150°C (TJ) Surface Mount
IXDI614PI

IXDI614PI

IC GATE DRVR LOW-SIDE 8DIP

IXYS Integrated Circuits Division
2,958 -

RFQ

IXDI614PI

Ficha técnica

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 14A, 14A Inverting - 25ns, 18ns -55°C ~ 150°C (TJ) Through Hole
IXDN609SI

IXDN609SI

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division
2,631 -

RFQ

IXDN609SI

Ficha técnica

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 9A, 9A Non-Inverting - 22ns, 15ns -55°C ~ 150°C (TJ) Surface Mount
IXDN604SI

IXDN604SI

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division
3,543 -

RFQ

IXDN604SI

Ficha técnica

Tube - Active Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 4A, 4A Non-Inverting - 9ns, 8ns -40°C ~ 125°C (TA) Surface Mount
IXDI614YI

IXDI614YI

IC GATE DRVR LOW-SIDE TO263-5

IXYS Integrated Circuits Division
2,751 -

RFQ

IXDI614YI

Ficha técnica

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 14A, 14A Inverting - 25ns, 18ns -55°C ~ 150°C (TJ) Surface Mount
IXDI630CI

IXDI630CI

IC GATE DRVR LOW-SIDE TO220-5

IXYS Integrated Circuits Division
3,995 -

RFQ

IXDI630CI

Ficha técnica

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 12.5V ~ 35V 0.8V, 3.5V 30A, 30A Inverting - 11ns, 11ns -55°C ~ 150°C (TJ) Through Hole
IXDI602D2TR

IXDI602D2TR

IC GATE DRVR LOW-SIDE 8DFN

IXYS Integrated Circuits Division
3,541 -

RFQ

IXDI602D2TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 2A, 2A Inverting - 7.5ns, 6.5ns -55°C ~ 150°C (TJ) Surface Mount
LF2106NTR

LF2106NTR

GATE DRIVER HIGH/LOW SIDE 0.13A

IXYS Integrated Circuits Division
2,898 -

RFQ

LF2106NTR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.6V, 2.5V 290mA, 600mA Non-Inverting 600 V 100ns, 35ns -40°C ~ 125°C (TA) Surface Mount
IX4351NETR

IX4351NETR

MOSFET IGBT SIC DRIVER 9A

IXYS Integrated Circuits Division
2,115 -

RFQ

IX4351NETR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Low-Side Single 1 IGBT, SiC MOSFET -10V ~ 25V 1V, 2.2V 9A, 9A CMOS, TTL - 10ns, 10ns -40°C ~ 125°C (TA) Surface Mount
IXDN614SITR

IXDN614SITR

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division
3,769 -

RFQ

IXDN614SITR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 14A, 14A Non-Inverting - 25ns, 18ns -55°C ~ 150°C (TJ) Surface Mount
IXDI630MCI

IXDI630MCI

IC GATE DRVR LOW-SIDE TO220-5

IXYS Integrated Circuits Division
3,481 -

RFQ

IXDI630MCI

Ficha técnica

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 9V ~ 35V 0.8V, 3.5V 30A, 30A Inverting - 11ns, 11ns -55°C ~ 150°C (TJ) Through Hole
IXDF602D2TR

IXDF602D2TR

IC GATE DRVR LOW-SIDE 8DFN

IXYS Integrated Circuits Division
2,582 -

RFQ

IXDF602D2TR

Ficha técnica

Tape & Reel (TR) - Active Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 2A, 2A Inverting, Non-Inverting - 7.5ns, 6.5ns -55°C ~ 150°C (TJ) Surface Mount
IXDF602PI

IXDF602PI

IC GATE DRVR LOW-SIDE 8DIP

IXYS Integrated Circuits Division
2,431 -

RFQ

IXDF602PI

Ficha técnica

Tube - Active Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 2A, 2A Inverting, Non-Inverting - 7.5ns, 6.5ns -55°C ~ 150°C (TJ) Through Hole
IXDN602D2TR

IXDN602D2TR

IC GATE DRVR LOW-SIDE 8DFN

IXYS Integrated Circuits Division
3,285 -

RFQ

IXDN602D2TR

Ficha técnica

Tape & Reel (TR) - Active Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 2A, 2A Non-Inverting - 7.5ns, 6.5ns -55°C ~ 150°C (TJ) Surface Mount
IXDF604SIATR

IXDF604SIATR

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division
2,486 -

RFQ

IXDF604SIATR

Ficha técnica

Tape & Reel (TR) - Active Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 4A, 4A Inverting, Non-Inverting - 9ns, 8ns -40°C ~ 125°C (TA) Surface Mount
IXDF602SITR

IXDF602SITR

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division
3,329 -

RFQ

IXDF602SITR

Ficha técnica

Tape & Reel (TR) - Active Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 2A, 2A Inverting, Non-Inverting - 7.5ns, 6.5ns -55°C ~ 150°C (TJ) Surface Mount
IXDI602SITR

IXDI602SITR

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division
2,214 -

RFQ

IXDI602SITR

Ficha técnica

Tape & Reel (TR) - Active Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 2A, 2A Inverting - 7.5ns, 6.5ns -55°C ~ 150°C (TJ) Surface Mount
IXDF602SI

IXDF602SI

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division
2,831 -

RFQ

IXDF602SI

Ficha técnica

Tube - Active Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 2A, 2A Inverting, Non-Inverting - 7.5ns, 6.5ns -55°C ~ 150°C (TJ) Surface Mount
IXDF604SITR

IXDF604SITR

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division
3,291 -

RFQ

IXDF604SITR

Ficha técnica

Tape & Reel (TR) - Active Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 4A, 4A Inverting, Non-Inverting - 9ns, 8ns -40°C ~ 125°C (TA) Surface Mount
IXDI630MYI

IXDI630MYI

IC GATE DRVR LOW-SIDE TO263-5

IXYS Integrated Circuits Division
2,346 -

RFQ

IXDI630MYI

Ficha técnica

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 9V ~ 35V 0.8V, 3.5V 30A, 30A Inverting - 11ns, 11ns -55°C ~ 150°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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