PMIC - Controladores de Puerta

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
IXDN609SIATR

IXDN609SIATR

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division
3,912 -

RFQ

IXDN609SIATR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 9A, 9A Non-Inverting - 22ns, 15ns -55°C ~ 150°C (TJ) Surface Mount
IXDD609SIATR

IXDD609SIATR

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division
2,892 -

RFQ

IXDD609SIATR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 9A, 9A Non-Inverting - 22ns, 15ns -55°C ~ 150°C (TJ) Surface Mount
IXDN602SIA

IXDN602SIA

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division
2,354 -

RFQ

IXDN602SIA

Ficha técnica

Tube - Active Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 2A, 2A Non-Inverting - 7.5ns, 6.5ns -55°C ~ 150°C (TJ) Surface Mount
IXDN609SITR

IXDN609SITR

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division
3,285 -

RFQ

IXDN609SITR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 9A, 9A Non-Inverting - 22ns, 15ns -55°C ~ 150°C (TJ) Surface Mount
IXDD609SITR

IXDD609SITR

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division
3,665 -

RFQ

IXDD609SITR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 9A, 9A Non-Inverting - 22ns, 15ns -55°C ~ 150°C (TJ) Surface Mount
IXDD609SIA

IXDD609SIA

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division
2,623 -

RFQ

IXDD609SIA

Ficha técnica

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 9A, 9A Non-Inverting - 22ns, 15ns -55°C ~ 150°C (TJ) Surface Mount
IXDD604SI

IXDD604SI

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division
2,665 -

RFQ

IXDD604SI

Ficha técnica

Tube - Active Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 4A, 4A Non-Inverting - 9ns, 8ns -40°C ~ 125°C (TA) Surface Mount
IX4427NTR

IX4427NTR

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division
2,994 -

RFQ

IX4427NTR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 30V 0.8V, 2.4V 1.5A, 1.5A Non-Inverting - 10ns, 8ns -55°C ~ 150°C (TJ) Surface Mount
IX4426NTR

IX4426NTR

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division
3,731 -

RFQ

IX4426NTR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 30V 0.8V, 2.4V 1.5A, 1.5A Inverting - 10ns, 8ns -55°C ~ 150°C (TJ) Surface Mount
IXDI614SI

IXDI614SI

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division
2,834 -

RFQ

IXDI614SI

Ficha técnica

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 14A, 14A Inverting - 25ns, 18ns -55°C ~ 150°C (TJ) Surface Mount
IXDN614YI

IXDN614YI

IC GATE DRVR LOW-SIDE TO263-5

IXYS Integrated Circuits Division
2,423 -

RFQ

IXDN614YI

Ficha técnica

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 14A, 14A Non-Inverting - 25ns, 18ns -55°C ~ 150°C (TJ) Surface Mount
IXDD630MYI

IXDD630MYI

IC GATE DRVR LOW-SIDE TO263-5

IXYS Integrated Circuits Division
3,530 -

RFQ

IXDD630MYI

Ficha técnica

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 9V ~ 35V 0.8V, 3.5V 30A, 30A Non-Inverting - 11ns, 11ns -55°C ~ 150°C (TJ) Surface Mount
IXDN630YI

IXDN630YI

IC GATE DRVR LOW-SIDE TO263-5

IXYS Integrated Circuits Division
2,727 -

RFQ

IXDN630YI

Ficha técnica

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 12.5V ~ 35V 0.8V, 3.5V 30A, 30A Non-Inverting - 11ns, 11ns -55°C ~ 150°C (TJ) Surface Mount
LF2103NTR

LF2103NTR

GATE DRIVER HALF BRIDGE 0.13A

IXYS Integrated Circuits Division
2,905 -

RFQ

LF2103NTR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 290mA, 600mA Inverting 600 V 35ns, 35ns -40°C ~ 125°C (TA) Surface Mount
IXDN602SIATR

IXDN602SIATR

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division
3,890 -

RFQ

IXDN602SIATR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 2A, 2A Non-Inverting - 7.5ns, 6.5ns -55°C ~ 150°C (TJ) Surface Mount
IXDN614CI

IXDN614CI

IC GATE DRVR LOW-SIDE TO220-5

IXYS Integrated Circuits Division
3,648 -

RFQ

IXDN614CI

Ficha técnica

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 14A, 14A Non-Inverting - 25ns, 18ns -55°C ~ 150°C (TJ) Through Hole
IX4426N

IX4426N

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division
2,750 -

RFQ

IX4426N

Ficha técnica

Tube - Active Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 30V 0.8V, 2.4V 1.5A, 1.5A Inverting - 10ns, 8ns -55°C ~ 150°C (TJ) Surface Mount
IX4340UE

IX4340UE

5-AMP DUAL LOW-SIDE MOSFET DRIVE

IXYS Integrated Circuits Division
2,476 -

RFQ

IX4340UE

Ficha técnica

Tube - Active Low-Side Independent 2 N-Channel, P-Channel MOSFET 5V ~ 20V 0.8V, 2.5V 5A, 5A Non-Inverting - 7ns, 7ns -55°C ~ 150°C (TJ) Surface Mount
IXDD604SITR

IXDD604SITR

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division
2,569 -

RFQ

IXDD604SITR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 4A, 4A Non-Inverting - 9ns, 8ns -40°C ~ 125°C (TA) Surface Mount
IXDD609PI

IXDD609PI

IC GATE DRVR LOW-SIDE 8DIP

IXYS Integrated Circuits Division
2,352 -

RFQ

IXDD609PI

Ficha técnica

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 9A, 9A Non-Inverting - 22ns, 15ns -55°C ~ 150°C (TJ) Through Hole
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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