PMIC - Controladores de Puerta

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
2ED21824S06JXUMA1

2ED21824S06JXUMA1

IC HALF BRIDGE GATE DRIVER 650V

Infineon Technologies
2,762 -

RFQ

2ED21824S06JXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Half-Bridge Synchronous 1 IGBT, N-Channel MOSFET 10V ~ 20V 1.1V, 1.7V 2.5A, 2.5A Non-Inverting 650 V 15ns, 15ns -40°C ~ 125°C (TA) Surface Mount
IRS2113STRPBF

IRS2113STRPBF

IC GATE DRVR HALF-BRIDGE 16SOIC

Infineon Technologies
3,610 -

RFQ

IRS2113STRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 6V, 9.5V 2.5A, 2.5A Non-Inverting 600 V 25ns, 17ns -40°C ~ 150°C (TJ) Surface Mount
IRS21864STRPBF

IRS21864STRPBF

IC GATE DRVR HI/LOW SIDE 14SOIC

Infineon Technologies
3,761 -

RFQ

IRS21864STRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Active High-Side or Low-Side Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 4A, 4A Non-Inverting 600 V 22ns, 18ns -40°C ~ 150°C (TJ) Surface Mount
IRS4427SPBF

IRS4427SPBF

IC GATE DRVR LOW-SIDE 8SOIC

Infineon Technologies
3,656 -

RFQ

IRS4427SPBF

Ficha técnica

Bulk,Tube - Active Low-Side Independent 2 IGBT, N-Channel MOSFET 6V ~ 20V 0.8V, 2.5V 2.3A, 3.3A Non-Inverting - 25ns, 25ns -40°C ~ 150°C (TJ) Surface Mount
2EDF9275FXUMA1

2EDF9275FXUMA1

IC IGBT DVR

Infineon Technologies
3,077 -

RFQ

2EDF9275FXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) EiceDriver™ Active Half-Bridge Independent 2 IGBT, SiC MOSFET 20V -, 1.65V 4A, 8A Non-Inverting 650 V 6.5ns, 4.5ns -40°C ~ 125°C (TA) Surface Mount
IRS2127SPBF

IRS2127SPBF

IC GATE DRVR HIGH-SIDE 8SOIC

Infineon Technologies
2,618 -

RFQ

IRS2127SPBF

Ficha técnica

Tube - Active High-Side Single 1 IGBT, N-Channel MOSFET 12V ~ 20V 0.8V, 2.5V 290mA, 600mA Non-Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount
AUIR3241STR

AUIR3241STR

IC GATE DRVR HIGH-SIDE 8SO

Infineon Technologies
3,708 -

RFQ

AUIR3241STR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q100 Active High-Side Single 1 N-Channel MOSFET 3V ~ 36V 0.8V, 2.5V 350mA, 350mA Non-Inverting - 6µs, 6µs -40°C ~ 150°C (TJ) Surface Mount
AUIR3242STRXUMA1

AUIR3242STRXUMA1

IC GATE DRVR HIGH-SIDE DSO8-907

Infineon Technologies
3,324 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q100 Active High-Side Single 1 N-Channel MOSFET 3V ~ 36V 0.8V, 2.5V 350mA, 350mA Non-Inverting - 6µs, 6µs -40°C ~ 150°C (TJ) Surface Mount
IRS2183STRPBF

IRS2183STRPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
3,494 -

RFQ

IRS2183STRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 1.9A, 2.3A Inverting, Non-Inverting 600 V 40ns, 20ns -40°C ~ 150°C (TJ) Surface Mount
IRS2106SPBF

IRS2106SPBF

IC GATE DRVR HI/LOW SIDE 8SOIC

Infineon Technologies
3,552 -

RFQ

IRS2106SPBF

Ficha técnica

Bulk,Tube - Active High-Side or Low-Side Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 290mA, 600mA Non-Inverting 600 V 100ns, 35ns -40°C ~ 150°C (TJ) Surface Mount
IRS21867SPBF

IRS21867SPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
2,048 -

RFQ

IRS21867SPBF

Ficha técnica

Bulk,Tube - Active Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 4A, 4A CMOS, TTL 600 V 22ns, 18ns -40°C ~ 150°C (TJ) Surface Mount
IRS2109SPBF

IRS2109SPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
3,466 -

RFQ

IRS2109SPBF

Ficha técnica

Bulk,Tube - Active Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 290mA, 600mA Non-Inverting 600 V 100ns, 35ns -40°C ~ 150°C (TJ) Surface Mount
IRS2453DSPBF

IRS2453DSPBF

IC GATE DRVR FULL-BRIDGE 14SOIC

Infineon Technologies
3,600 -

RFQ

IRS2453DSPBF

Ficha técnica

Tube - Active Full-Bridge Synchronous 1 N-Channel MOSFET 10V ~ 15.6V 4.7V, 9.3V 180mA, 260mA RC Input Circuit 600 V 120ns, 50ns -25°C ~ 125°C (TJ) Surface Mount
6EDL04I06PTXUMA1

6EDL04I06PTXUMA1

IC GATE DRVR HALF-BRIDGE DSO28

Infineon Technologies
2,302 -

RFQ

6EDL04I06PTXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk EiceDriver™ Active Half-Bridge 3-Phase 6 IGBT, N-Channel, P-Channel MOSFET 13V ~ 17.5V 1.1V, 1.7V - Non-Inverting 600 V 60ns, 26ns -40°C ~ 125°C (TJ) Surface Mount
IRS21844SPBF

IRS21844SPBF

IC GATE DRVR HALF-BRIDGE 14SOIC

Infineon Technologies
2,252 -

RFQ

IRS21844SPBF

Ficha técnica

Bulk,Tube - Active Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 1.9A, 2.3A Non-Inverting 600 V 40ns, 20ns -40°C ~ 150°C (TJ) Surface Mount
IRS2183SPBF

IRS2183SPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
2,513 -

RFQ

IRS2183SPBF

Ficha técnica

Bulk,Tube - Active Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 1.9A, 2.3A Inverting, Non-Inverting 600 V 40ns, 20ns -40°C ~ 150°C (TJ) Surface Mount
IRS21864SPBF

IRS21864SPBF

IC GATE DRVR HI/LOW SIDE 14SOIC

Infineon Technologies
2,219 -

RFQ

IRS21864SPBF

Ficha técnica

Tube - Active High-Side or Low-Side Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 4A, 4A Non-Inverting 600 V 22ns, 18ns -40°C ~ 150°C (TJ) Surface Mount
IR2111SPBF

IR2111SPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
2,499 -

RFQ

IR2111SPBF

Ficha técnica

Tube - Active Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 8.3V, 12.6V 250mA, 500mA Non-Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount
IRS2304PBF

IRS2304PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies
2,316 -

RFQ

IRS2304PBF

Ficha técnica

Bulk,Tube - Not For New Designs Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.7V, 2.3V 290mA, 600mA Non-Inverting 600 V 70ns, 35ns -40°C ~ 150°C (TJ) Through Hole
IR21814SPBF

IR21814SPBF

IC GATE DRVR HALF-BRIDGE 14SOIC

Infineon Technologies
2,594 -

RFQ

IR21814SPBF

Ficha técnica

Bulk,Tube - Active Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.7V 1.9A, 2.3A Non-Inverting 600 V 40ns, 20ns -40°C ~ 150°C (TJ) Surface Mount
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1500+
1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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