PMIC - Controladores de Puerta

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
IR2010PBF

IR2010PBF

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies
3,229 -

RFQ

IR2010PBF

Ficha técnica

Bulk,Tube - Active Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 6V, 9.5V 3A, 3A Non-Inverting 200 V 10ns, 15ns -40°C ~ 150°C (TJ) Through Hole
IR2153STRPBF

IR2153STRPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
2,304 -

RFQ

IR2153STRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Not For New Designs Half-Bridge Synchronous 2 N-Channel MOSFET 10V ~ 15.6V - - RC Input Circuit 600 V 80ns, 45ns -40°C ~ 125°C (TJ) Surface Mount
IR2301STRPBF

IR2301STRPBF

IC GATE DRVR HI/LOW SIDE 8SOIC

Infineon Technologies
3,068 -

RFQ

IR2301STRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active High-Side or Low-Side Independent 2 IGBT, N-Channel MOSFET 5V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 130ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
2ED2106S06FXUMA1

2ED2106S06FXUMA1

IC GATE DRIVER 8-DSO

Infineon Technologies
2,428 -

RFQ

2ED2106S06FXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active High-Side and Low-Side Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 1.1V, 1.7V 290mA, 700mA CMOS, TTL 675 V 100ns, 35ns -40°C ~ 125°C (TA) Surface Mount
AUIRS21811STR

AUIRS21811STR

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
2,887 -

RFQ

AUIRS21811STR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 1.9A, 2.3A Non-Inverting 600 V 60ns, 35ns (Max) -40°C ~ 150°C (TJ) Surface Mount
2EDF7175FXUMA2

2EDF7175FXUMA2

IC GATE DRVR HALF-BRIDG DSO16

Infineon Technologies
2,339 -

RFQ

2EDF7175FXUMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) EiceDriver™ Active Half-Bridge Independent 2 N-Channel, P-Channel MOSFET 20V -, 1.65V 1A, 2A Non-Inverting - 6.5ns, 4.5ns -40°C ~ 125°C (TA) Surface Mount
2ED21844S06JXUMA1

2ED21844S06JXUMA1

IC HALF BRIDGE GATE DRIVER 650V

Infineon Technologies
2,343 -

RFQ

2ED21844S06JXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Half-Bridge Synchronous 1 IGBT, N-Channel MOSFET 10V ~ 20V 1.1V, 1.7V 2.5A, 2.5A Non-Inverting 650 V 15ns, 15ns -40°C ~ 125°C (TA) Surface Mount
IRS2153DSPBF

IRS2153DSPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
2,183 -

RFQ

IRS2153DSPBF

Ficha técnica

Tube - Active Half-Bridge Synchronous 2 N-Channel MOSFET 10V ~ 15.4V - 180mA, 260mA RC Input Circuit 600 V 120ns, 50ns -40°C ~ 125°C (TJ) Surface Mount
IRS2101SPBF

IRS2101SPBF

IC GATE DRVR HI/LOW SIDE 8SOIC

Infineon Technologies
2,516 -

RFQ

IRS2101SPBF

Ficha técnica

Tube - Active High-Side or Low-Side Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 290mA, 600mA Non-Inverting 600 V 70ns, 35ns -40°C ~ 150°C (TJ) Surface Mount
IRS4428SPBF

IRS4428SPBF

IC GATE DRVR LOW-SIDE 8SOIC

Infineon Technologies
3,015 -

RFQ

IRS4428SPBF

Ficha técnica

Bulk,Tube - Active Low-Side Independent 2 IGBT, N-Channel MOSFET 6V ~ 20V 0.8V, 2.5V 2.3A, 3.3A Inverting, Non-Inverting - 25ns, 25ns -40°C ~ 150°C (TJ) Surface Mount
IR2153SPBF

IR2153SPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
3,418 -

RFQ

IR2153SPBF

Ficha técnica

Bulk,Tube - Not For New Designs Half-Bridge Synchronous 2 N-Channel MOSFET 10V ~ 15.6V - - RC Input Circuit 600 V 80ns, 45ns -40°C ~ 125°C (TJ) Surface Mount
IRS2184SPBF

IRS2184SPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
2,655 -

RFQ

IRS2184SPBF

Ficha técnica

Bulk,Tube - Active Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 1.9A, 2.3A Non-Inverting 600 V 40ns, 20ns -40°C ~ 150°C (TJ) Surface Mount
IRS2104PBF

IRS2104PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies
2,047 -

RFQ

IRS2104PBF

Ficha técnica

Bulk,Tube - Active Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 290mA, 600mA Non-Inverting 600 V 70ns, 35ns -40°C ~ 150°C (TJ) Through Hole
AUIRS2191STR

AUIRS2191STR

IC GATE DRVR HALF-BRIDGE 16SOIC

Infineon Technologies
3,685 -

RFQ

AUIRS2191STR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q100 Active Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 3.5A, 3.5A Non-Inverting 600 V 15ns, 15ns -40°C ~ 150°C (TJ) Surface Mount
IR2153PBF

IR2153PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies
380 -

RFQ

IR2153PBF

Ficha técnica

Bulk,Tube - Not For New Designs Half-Bridge Synchronous 2 N-Channel MOSFET 10V ~ 15.6V - - RC Input Circuit 600 V 80ns, 45ns -40°C ~ 125°C (TJ) Through Hole
IR2118SPBF

IR2118SPBF

IC GATE DRVR HIGH-SIDE 8SOIC

Infineon Technologies
2,278 -

RFQ

IR2118SPBF

Ficha técnica

Bulk,Tube - Active High-Side Single 1 IGBT, N-Channel MOSFET 10V ~ 20V 6V, 9.5V 250mA, 500mA Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount
2ED020I12FIXUMA1

2ED020I12FIXUMA1

IC GATE DRVR HALF-BRIDGE DSO18-2

Infineon Technologies
2,988 -

RFQ

2ED020I12FIXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Active Half-Bridge Independent 2 IGBT, N-Channel MOSFET 14V ~ 18V 0.8V, 2V 1A, 2A Inverting 1200 V 20ns, 20ns -40°C ~ 150°C (TJ) Surface Mount
6ED003L06F2XUMA1

6ED003L06F2XUMA1

IC GATE DRVR HALF-BRIDGE DSO28

Infineon Technologies
2,269 -

RFQ

6ED003L06F2XUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk EiceDriver™ Active Half-Bridge 3-Phase 6 IGBT, N-Channel, P-Channel MOSFET 13V ~ 17.5V 1.1V, 1.7V - Inverting 620 V 60ns, 26ns -40°C ~ 125°C (TJ) Surface Mount
IR4426SPBF

IR4426SPBF

IC GATE DRVR LOW-SIDE 8SOIC

Infineon Technologies
572 -

RFQ

IR4426SPBF

Ficha técnica

Tube - Active Low-Side Independent 2 IGBT, N-Channel MOSFET 6V ~ 20V 0.8V, 2.7V 2.3A, 3.3A Inverting - 15ns, 10ns -40°C ~ 150°C (TJ) Surface Mount
IR21531SPBF

IR21531SPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
2,051 -

RFQ

IR21531SPBF

Ficha técnica

Bulk,Tube - Active Half-Bridge Synchronous 2 N-Channel MOSFET 10V ~ 15.6V - - RC Input Circuit 600 V 80ns, 45ns -40°C ~ 125°C (TJ) Surface Mount
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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