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PMIC - Controladores de Puerta

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	ProductStatus	DrivenConfiguration	ChannelType	NumberofDrivers	GateType	Voltage-Supply	LogicVoltage-VILVIH	Current-PeakOutput(SourceSink)	InputType	HighSideVoltage-Max(Bootstrap)	Rise/FallTime(Typ)	OperatingTemperature	MountingType
LTC1177IN-12 IC GATE DRVR HIGH-SIDE 18DIP Analog Devices Inc.	3,571	-	RFQ	Ficha técnica	Bulk	-	Obsolete	High-Side	-	1	-	11.4V ~ 12.6V	-	-	Non-Inverting	-	-	-	Through Hole
LTC1177IN-5 IC GATE DRVR HIGH-SIDE 18DIP Analog Devices Inc.	3,883	-	RFQ	Ficha técnica	Bulk	-	Obsolete	High-Side	-	1	-	4.75V ~ 5.25V	-	-	Non-Inverting	-	-	-	Through Hole
LTC1177IS-12 IC GATE DRVR HIGH-SIDE 28SOIC Analog Devices Inc.	2,702	-	RFQ		Bulk	-	Obsolete	High-Side	-	1	-	11.4V ~ 12.6V	-	-	Non-Inverting	-	-	-	Surface Mount
LTC1177ISW-5 IC GATE DRVR HIGH-SIDE 28SOIC Analog Devices Inc.	3,864	-	RFQ	Ficha técnica	Bulk	-	Obsolete	High-Side	-	1	-	4.75V ~ 5.25V	-	-	Non-Inverting	-	-	-	Surface Mount
LTC1255IN8 IC GATE DRVR HIGH-SIDE 8DIP Analog Devices Inc.	3,212	-	RFQ	Ficha técnica	Tube	-	Active	High-Side	Independent	2	N-Channel MOSFET	9V ~ 24V	0.8V, 2V	-	Non-Inverting	-	-	-40°C ~ 85°C (TA)	Through Hole
MAX627CSA IC GATE DRVR LOW-SIDE 8SOIC Analog Devices Inc./Maxim Integrated	2,467	-	RFQ	Ficha técnica	Tube,Tube	-	Obsolete	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	2A, 2A	Non-Inverting	-	25ns, 20ns	0°C ~ 70°C (TA)	Surface Mount
IR2101S IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	2,700	-	RFQ	Ficha técnica	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 3V	210mA, 360mA	Non-Inverting	600 V	100ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2102 IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	2,100	-	RFQ	Ficha técnica	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 3V	210mA, 360mA	Inverting	600 V	100ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
IR21064 IC GATE DRVR HI/LOW SIDE 14DIP Infineon Technologies	2,399	-	RFQ	Ficha técnica	Tube	-	Obsolete	High-Side or Low-Side	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
IR21064S IC GATE DRVR HI/LOW SIDE 14SOIC Infineon Technologies	3,697	-	RFQ	Ficha técnica	Tube	-	Obsolete	High-Side or Low-Side	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2106S IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	3,288	-	RFQ	Ficha técnica	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IR21074 IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies	3,348	-	RFQ	Ficha técnica	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.7V	200mA, 350mA	Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
IR21074S IC GATE DRVR HALF-BRIDGE 14SOIC Infineon Technologies	2,875	-	RFQ	Ficha técnica	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.7V	200mA, 350mA	Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2107S IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	2,332	-	RFQ	Ficha técnica	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.7V	200mA, 350mA	Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
98-0255 IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies	3,033	-	RFQ	Ficha técnica	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
98-0317 IC GATE DRVR HALF-BRIDGE 14SOIC Infineon Technologies	2,172	-	RFQ	Ficha técnica	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2108S IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	3,760	-	RFQ	Ficha técnica	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2109 IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	2,282	-	RFQ	Ficha técnica	Tube	-	Obsolete	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
IR21094 IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies	2,132	-	RFQ	Ficha técnica	Tube	-	Obsolete	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
IR21094S IC GATE DRVR HALF-BRIDGE 14SOIC Infineon Technologies	3,815	-	RFQ	Ficha técnica	Tube	-	Obsolete	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount