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PMIC - Controladores de Puerta
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | DrivenConfiguration | ChannelType | NumberofDrivers | GateType | Voltage-Supply | LogicVoltage-VILVIH | Current-PeakOutput(SourceSink) | InputType | HighSideVoltage-Max(Bootstrap) | Rise/FallTime(Typ) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IR2101IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
2,406 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600 V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR2104IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
3,107 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600 V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR2106IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
2,320 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600 V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR2108IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
2,279 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600 V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole |
|
IR2110IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies |
2,436 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 3.3V ~ 20V | 6V, 9.5V | 2A, 2A | Non-Inverting | 500 V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR2111IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
3,341 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 8.3V, 12.6V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR2112IC GATE DRVR HI/LOW SIDE 14DIP Infineon Technologies |
3,397 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR2113IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies |
2,961 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 3.3V ~ 20V | 6V, 9.5V | 2A, 2A | Non-Inverting | 600 V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR2117IC GATE DRVR HIGH-SIDE 8DIP Infineon Technologies |
2,615 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR2125IC GATE DRVR HIGH-SIDE 8DIP Infineon Technologies |
2,192 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 0V ~ 18V | 0.8V, 2.2V | 1.6A, 3.3A | Non-Inverting | 500 V | 43ns, 26ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR2127IC GATE DRV HI-SIDE/LO-SIDE 8DIP Infineon Technologies |
3,113 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 12V ~ 20V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole |
|
IR2130IC GATE DRVR HALF-BRIDGE 28DIP Infineon Technologies |
2,991 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600 V | 80ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole |
|
IR2133JIC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies |
3,616 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600 V | 90ns, 40ns | 125°C (TJ) | Surface Mount |
|
|
IR2136IC GATE DRVR HALF-BRIDGE 28DIP Infineon Technologies |
3,105 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 200mA, 350mA | Inverting | 600 V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR2153IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
2,678 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10V ~ 15.6V | - | - | RC Input Circuit | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR2233JIC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies |
2,075 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2V | 250mA, 500mA | Inverting | 1200 V | 90ns, 40ns | 125°C (TJ) | Surface Mount |
|
LTC1177CN-12IC GATE DRVR HIGH-SIDE 18DIP Analog Devices Inc. |
2,339 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | High-Side | - | 1 | - | 11.4V ~ 12.6V | - | - | Non-Inverting | - | - | - | Through Hole |
|
|
LTC1177CN-5IC GATE DRVR HIGH-SIDE 18DIP Analog Devices Inc. |
3,473 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | High-Side | - | 1 | - | 4.75V ~ 5.25V | - | - | Non-Inverting | - | - | - | Through Hole |
|
LTC1177CSW-12IC GATE DRVR HIGH-SIDE 28SOIC Analog Devices Inc. |
2,349 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | High-Side | - | 1 | - | 11.4V ~ 12.6V | - | - | Non-Inverting | - | - | - | Surface Mount |
|
|
LTC1177CSW-5IC GATE DRVR HIGH-SIDE 28SDIP Analog Devices Inc. |
3,323 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | High-Side | - | 1 | - | 4.75V ~ 5.25V | - | - | Non-Inverting | - | - | - | Surface Mount |
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