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PMIC - Controladores de Puerta

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	ProductStatus	DrivenConfiguration	ChannelType	NumberofDrivers	GateType	Voltage-Supply	LogicVoltage-VILVIH	Current-PeakOutput(SourceSink)	InputType	HighSideVoltage-Max(Bootstrap)	Rise/FallTime(Typ)	OperatingTemperature	MountingType
IXDF604SI IC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division	2,606	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5V ~ 35V	0.8V, 3V	4A, 4A	Inverting, Non-Inverting	-	9ns, 8ns	-40°C ~ 125°C (TA)	Surface Mount
TC4424EPA IC GATE DRVR LOW-SIDE 8DIP Microchip Technology	3,394	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	3A, 3A	Non-Inverting	-	23ns, 25ns	-40°C ~ 150°C (TJ)	Through Hole
TC4432COA IC GATE DRVR HI/LOW SIDE 8SOIC Microchip Technology	190	-	RFQ	Ficha técnica	Tube	-	Active	High-Side or Low-Side	Single	1	N-Channel, P-Channel MOSFET	4.5V ~ 30V	0.8V, 2.4V	1.5A, 1.5A	Non-Inverting	-	25ns, 33ns	0°C ~ 150°C (TJ)	Surface Mount
IR21531PBF IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	3,734	-	RFQ	Ficha técnica	Tube	-	Not For New Designs	Half-Bridge	Synchronous	2	N-Channel MOSFET	10V ~ 15.6V	-	-	RC Input Circuit	600 V	80ns, 45ns	-40°C ~ 125°C (TJ)	Through Hole
EL7222CSZ IC GATE DRVR LOW-SIDE 8SOIC Renesas Electronics America Inc	2,851	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5V ~ 15V	0.8V, 2.4V	2A, 2A	Inverting, Non-Inverting	-	7.5ns, 10ns	-40°C ~ 125°C (TJ)	Surface Mount
IR2302SPBF IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	808	-	RFQ	Ficha técnica	Tube	-	Active	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	5V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	130ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
ISL2101AABZ IC GATE DRVR HALF-BRIDGE 8SOIC Renesas Electronics America Inc	123	-	RFQ	Ficha técnica	Tube	-	Active	Half-Bridge	Independent	2	N-Channel MOSFET	9V ~ 14V	1.4V, 2.2V	2A, 2A	Non-Inverting	114 V	10ns, 10ns	-40°C ~ 125°C (TJ)	Surface Mount
IRS2004PBF IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	3,055	-	RFQ	Ficha técnica	Tube	-	Active	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	200 V	70ns, 35ns	-40°C ~ 150°C (TJ)	Through Hole
IR2112SPBF IC GATE DRVR HI/LOW SIDE 16SOIC Infineon Technologies	3,055	-	RFQ	Ficha técnica	Bulk,Tube	-	Active	High-Side or Low-Side	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	6V, 9.5V	250mA, 500mA	Non-Inverting	600 V	80ns, 40ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2104PBF IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	2,720	-	RFQ	Ficha técnica	Tube	-	Not For New Designs	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 3V	210mA, 360mA	Non-Inverting	600 V	100ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
IR2102SPBF IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	2,435	-	RFQ	Ficha técnica	Tube	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 3V	210mA, 360mA	Inverting	600 V	100ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IRS23364DSTRPBF IC GATE DRVR HALF-BRIDGE 28SOIC Infineon Technologies	2,015	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	11.5V ~ 20V	0.8V, 2.5V	200mA, 350mA	Non-Inverting	600 V	125ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
MIC4468YWM IC GATE DRVR LOW-SIDE 16SOIC Microchip Technology	420	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Independent	4	N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	1.2A, 1.2A	Non-Inverting	-	14ns, 13ns	-40°C ~ 85°C (TA)	Surface Mount
IRS2110PBF IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies	397	-	RFQ	Ficha técnica	Tube	-	Not For New Designs	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	6V, 9.5V	2.5A, 2.5A	Non-Inverting	500 V	25ns, 17ns	-40°C ~ 150°C (TJ)	Through Hole
MAX4420ESA+ IC GATE DRVR LOW-SIDE 8SOIC Analog Devices Inc./Maxim Integrated	200	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Single	1	N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	6A, 6A	Non-Inverting	-	25ns, 25ns	-40°C ~ 85°C (TA)	Surface Mount
IRS2453DPBF IC GATE DRVR FULL-BRIDGE 14DIP Infineon Technologies	211	-	RFQ	Ficha técnica	Tube	-	Active	Full-Bridge	Synchronous	1	N-Channel MOSFET	10V ~ 15.6V	4.7V, 9.3V	180mA, 260mA	RC Input Circuit	600 V	120ns, 50ns	-25°C ~ 125°C (TJ)	Through Hole
MAX4426ESA+ IC GATE DRVR LOW-SIDE 8SOIC Analog Devices Inc./Maxim Integrated	900	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	1.5A, 1.5A	Inverting	-	20ns, 20ns	-40°C ~ 85°C (TA)	Surface Mount
MAX627CSA+ IC GATE DRVR LOW-SIDE 8SOIC Analog Devices Inc./Maxim Integrated	315	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	2A, 2A	Non-Inverting	-	25ns, 20ns	0°C ~ 70°C (TA)	Surface Mount
IR2112PBF IC GATE DRVR HI/LOW SIDE 14DIP Infineon Technologies	2,770	-	RFQ	Ficha técnica	Tube	-	Not For New Designs	High-Side or Low-Side	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	6V, 9.5V	250mA, 500mA	Non-Inverting	600 V	80ns, 40ns	-40°C ~ 150°C (TJ)	Through Hole
ICL7667CPA+ IC GATE DRVR HALF-BRIDGE 8DIP Analog Devices Inc./Maxim Integrated	227	-	RFQ	Ficha técnica	Tube	-	Active	-	Independent	2	N-Channel MOSFET	4.5V ~ 17V	0.8V, 2V	-	Inverting	-	20ns, 20ns	0°C ~ 150°C (TJ)	Through Hole