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PMIC - Controladores de Puerta
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | DrivenConfiguration | ChannelType | NumberofDrivers | GateType | Voltage-Supply | LogicVoltage-VILVIH | Current-PeakOutput(SourceSink) | InputType | HighSideVoltage-Max(Bootstrap) | Rise/FallTime(Typ) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MAX14922ATE+HIGH-SIDE SWITCH CONTROLLER Analog Devices Inc./Maxim Integrated |
2,680 | - |
RFQ |
Ficha técnica |
Tray | - | Active | High-Side | Single | 1 | N-Channel MOSFET | 9V ~ 70V | - | - | Non-Inverting | - | - | -40°C ~ 125°C (TA) | Surface Mount |
|
IRS21531DPBFIC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
3,601 | - |
RFQ |
Ficha técnica |
Tube | - | Not For New Designs | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10V ~ 15.4V | - | 180mA, 260mA | RC Input Circuit | 600 V | 120ns, 50ns | -40°C ~ 125°C (TJ) | Through Hole |
|
LM5101M/NOPBIC GATE DRVR HALF-BRIDGE 8SOIC Texas Instruments |
943 | - |
RFQ |
Ficha técnica |
Tube | - | Not For New Designs | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9V ~ 14V | 0.8V, 2.2V | 1.6A, 1.6A | Non-Inverting | 118 V | 600ns, 600ns | -40°C ~ 125°C (TJ) | Surface Mount |
|
IXDD614SIIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
955 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
IR2111PBFIC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
3,968 | - |
RFQ |
Ficha técnica |
Tube | - | Not For New Designs | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 8.3V, 12.6V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole |
|
IXDD604D2TRIC GATE DRVR LOW-SIDE 8DFN IXYS Integrated Circuits Division |
3,037 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount |
|
TC1411NCOA713IC GATE DRVR LOW-SIDE 8SOIC Microchip Technology |
3,281 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2V | 1A, 1A | Non-Inverting | - | 25ns, 25ns | 0°C ~ 150°C (TJ) | Surface Mount |
|
|
TC1411NEOA713IC GATE DRVR LOW-SIDE 8SOIC Microchip Technology |
3,293 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2V | 1A, 1A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
FAN7390M1XIC GATE DRVR HALF-BRIDGE 14SOP onsemi |
2,623 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Not For New Designs | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 22V | 1.2V, 2.5V | 4.5A, 4.5A | Non-Inverting | 600 V | 25ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
TC4427AEOA713IC GATE DRVR LOW-SIDE 8SOIC Microchip Technology |
3,236 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 85°C (TA) | Surface Mount |
|
|
IR2103PBFIC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
2,310 | - |
RFQ |
Ficha técnica |
Tube | - | Not For New Designs | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 210mA, 360mA | Inverting, Non-Inverting | 600 V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
TC4452VPAIC GATE DRVR LOW-SIDE 8DIP Microchip Technology |
2,783 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 13A, 13A | Non-Inverting | - | 30ns, 32ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IXDI609SIIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
3,841 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
MIC4421ZNIC GATE DRVR LOW-SIDE 8DIP Microchip Technology |
343 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 9A, 9A | Inverting | - | 20ns, 24ns | 0°C ~ 150°C (TJ) | Through Hole |
|
IX4351NEMOSFET IGBT SIC DRIVER 9A IXYS Integrated Circuits Division |
985 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Single | 1 | IGBT, SiC MOSFET | -10V ~ 25V | 1V, 2.2V | 9A, 9A | CMOS, TTL | - | 10ns, 10ns | -40°C ~ 125°C (TA) | Surface Mount |
|
TC4421AVATIC GATE DRVR LOW-SIDE TO220-5 Microchip Technology |
2,275 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 10A, 10A | Inverting | - | 38ns, 33ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
TC4422AVATIC GATE DRVR LOW-SIDE TO220-5 Microchip Technology |
925 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 10A, 10A | Non-Inverting | - | 38ns, 33ns | -40°C ~ 150°C (TJ) | Through Hole |
|
SN75372PIC GATE DRVR LOW-SIDE 8DIP Texas Instruments |
3,851 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Synchronous | 2 | N-Channel MOSFET | 4.75V ~ 5.25V, 4.75V ~ 24V | 0.8V, 2V | 500mA, 500mA | Inverting | - | - | 0°C ~ 70°C (TA) | Through Hole |
|
|
IR4427PBFIC GATE DRVR LOW-SIDE 8DIP Infineon Technologies |
329 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6V ~ 20V | 0.8V, 2.7V | 2.3A, 3.3A | Non-Inverting | - | 15ns, 10ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IXDI604SIIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
2,432 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount |
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