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Optoaisladores - Salida de transistor, fotovoltaica
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | NumberofChannels | Voltage-Isolation | CurrentTransferRatio(Min) | CurrentTransferRatio(Max) | TurnOn/TurnOffTime(Typ) | Rise/FallTime(Typ) | InputType | OutputType | Voltage-Output(Max) | Current-Output/Channel | Voltage-Forward(Vf)(Typ) | Current-DCForward(If)(Max) | VceSaturation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TLP628MF(ETR COUPLER; DIP4 WIDE CREEPAGE; Toshiba Semiconductor and Storage |
3,667 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 50% @ 5mA | 600% @ 5mA | 10µs, 10µs | 5.5µs, 10µs | DC | Transistor | 350V | 50mA | 1.25V | 50 mA | 400mV | -55°C ~ 125°C | Through Hole |
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TLP628M(GB,ETR COUPLER; DIP4; ROHS; Toshiba Semiconductor and Storage |
3,838 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 100% @ 5mA | 600% @ 5mA | 10µs, 10µs | 5.5µs, 10µs | DC | Transistor | 350V | 50mA | 1.25V | 50 mA | 400mV | -55°C ~ 125°C | Through Hole |
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TLP627M(LF1,EOPTOIOSOLATOR DARLINGTON Toshiba Semiconductor and Storage |
2,581 | - |
RFQ |
Tube | - | Active | 1 | 5000Vrms | 1000% @ 1mA | - | 110µs, 30µs | 60µs, 30µs | DC | Darlington | 300V | 150mA | 1.25V | 50 mA | 1.2V | -55°C ~ 110°C | Surface Mount | |
|
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TLP627M(EOPTOIOSOLATOR DARLINGTON Toshiba Semiconductor and Storage |
2,618 | - |
RFQ |
Tube | - | Active | 1 | 5000Vrms | - | 1000% @ 1mA | 110µs, 30µs | 60µs, 30µs | DC | Darlington | 300V | 150mA | 1.25V | 50 mA | 1.2V | -55°C ~ 110°C | Through Hole | |
|
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TLP627M(D4,EOPTOIOSOLATOR DARLINGTON 4DIP Toshiba Semiconductor and Storage |
3,346 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 1000% @ 1mA | - | 110µs, 30µs | 60µs, 30µs | DC | Darlington | 300V | 150mA | 1.25V | 50 mA | 1.2V | -55°C ~ 110°C | Through Hole |
|
|
TLP627MF(E264-TLP627F-2(F)-ND Toshiba Semiconductor and Storage |
2,875 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 1000% @ 1mA | - | 110µs, 30µs | 60µs, 30µs | DC | Darlington | 300V | 150mA | 1.25V | 50 mA | 1.2V | -55°C ~ 110°C | Surface Mount |
|
|
TLP627MF(D4,EOPTOIOSOLATOR DARL F TYPE 4DIP Toshiba Semiconductor and Storage |
2,339 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 1000% @ 1mA | - | 110µs, 30µs | 60µs, 30µs | DC | Darlington | 300V | 150mA | 1.25V | 50 mA | 1.2V | -55°C ~ 110°C | Through Hole |
|
|
TLP627M(LF5,EDC INPUT PHOTOCOUPLER; DIP4 Toshiba Semiconductor and Storage |
3,067 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 1000% @ 1mA | - | 110µs, 30µs | 60µs, 30µs | DC | Darlington | 300V | 150mA | 1.25V | 50 mA | 1.2V | -55°C ~ 110°C | Surface Mount |
|
|
TLP627M(D4-LF1,EDC INPUT PHOTOCOUPLER; DIP4; VDE Toshiba Semiconductor and Storage |
2,321 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 1000% @ 1mA | - | 110µs, 30µs | 60µs, 30µs | DC | Darlington | 300V | 150mA | 1.25V | 50 mA | 1.2V | -55°C ~ 110°C | Surface Mount |
|
|
TLP627MF(LF4,EDC INPUT PHOTOCOUPLER; DIP4; WID Toshiba Semiconductor and Storage |
2,404 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 1000% @ 1mA | - | 110µs, 30µs | 60µs, 30µs | DC | Darlington | 300V | 150mA | 1.25V | 50 mA | 1.2V | -55°C ~ 110°C | Surface Mount |
|
|
TLP627MF(D4-F4,EDC INPUT PHOTOCOUPLER; DIP4; WID Toshiba Semiconductor and Storage |
3,056 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 1000% @ 1mA | - | 110µs, 30µs | 60µs, 30µs | DC | Darlington | 300V | 150mA | 1.25V | 50 mA | 1.2V | -55°C ~ 110°C | Through Hole |
|
|
TLP627M(D4-LF5,EDC INPUT PHOTOCOUPLER; DIP4; VDE Toshiba Semiconductor and Storage |
2,067 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 1000% @ 1mA | - | 110µs, 30µs | 60µs, 30µs | DC | Darlington | 300V | 150mA | 1.25V | 50 mA | 1.2V | -55°C ~ 110°C | Surface Mount |
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TLP2309(TPR,EX36 PB-F HIGH SPEED LOGIC OUTPUT Toshiba Semiconductor and Storage |
2,704 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | 1 | 3750Vrms | 15% @ 16mA | - | 1µs, 1µs (Max) | - | DC | Transistor | 20V | 8mA | 1.55V | 25 mA | - | -40°C ~ 110°C | Surface Mount |
|
TLP293-4(GBTPR,EOPTOISOLATOR 3.75KV TRANS SO16 Toshiba Semiconductor and Storage |
3,212 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 4 | 3750Vrms | 100% @ 5mA | 600% @ 5mA | 3µs, 3µs | 2µs, 3µs | DC | Transistor | 80V | 50mA | 1.25V | 50 mA | 300mV | -55°C ~ 125°C | Surface Mount |
|
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TLP109(IGM-TPL,EOPTOISO 3.75KV TRANS 6-SO 5 LEAD Toshiba Semiconductor and Storage |
2,084 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 1 | 3750Vrms | 25% @ 10mA | 75% @ 10mA | 450ns, 450ns | - | DC | Transistor | 20V | 8mA | 1.64V | 20 mA | - | -55°C ~ 125°C | Surface Mount |
|
|
TLP109(V4-TPL,EOPTOISO 3.75KV TRANS 6-SO 5 LEAD Toshiba Semiconductor and Storage |
2,226 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 1 | 3750Vrms | 20% @ 16mA | - | 800ns, 800ns (Max) | - | DC | Transistor | 20V | 8mA | 1.64V | 20 mA | - | -55°C ~ 125°C | Surface Mount |
|
TLP185(GB,SEX36 PB PHOTOCOUPLER SO6 ROHS BUL Toshiba Semiconductor and Storage |
3,248 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 3750Vrms | 100% @ 5mA | 600% @ 5mA | 3µs, 3µs | 2µs, 3µs | DC | Transistor | 80V | 50mA | 1.25V | 50 mA | 300mV | -55°C ~ 110°C | Surface Mount |
|
|
TLP185(SEX36 PB-F PHOTOCOUPLER SO6 BULK Toshiba Semiconductor and Storage |
3,986 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 3750Vrms | 50% @ 5mA | 600% @ 5mA | 3µs, 3µs | 2µs, 3µs | DC | Transistor | 80V | 50mA | 1.25V | 50 mA | 300mV | -55°C ~ 110°C | Surface Mount |
|
|
TLP292-4(V4GBTREOPTOISOLATOR 3.75KV TRANS SO16 Toshiba Semiconductor and Storage |
3,519 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 4 | 3750Vrms | 100% @ 5mA | 600% @ 5mA | 3µs, 3µs | 2µs, 3µs | AC, DC | Transistor | 80V | 50mA | 1.25V | 50 mA | 300mV | -55°C ~ 125°C | Surface Mount |
|
|
TLP187(EX36 PB-F PHOTOCOUPLER ROHS SO6 B Toshiba Semiconductor and Storage |
2,685 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 3750Vrms | 1000% @ 1mA | - | 50µs, 15µs | 40µs, 15µs | DC | Darlington | 300V | 150mA | 1.25V | 50 mA | 1.2V | -55°C ~ 110°C | Surface Mount |
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