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Optoaisladores - Salida de transistor, fotovoltaica
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | NumberofChannels | Voltage-Isolation | CurrentTransferRatio(Min) | CurrentTransferRatio(Max) | TurnOn/TurnOffTime(Typ) | Rise/FallTime(Typ) | InputType | OutputType | Voltage-Output(Max) | Current-Output/Channel | Voltage-Forward(Vf)(Typ) | Current-DCForward(If)(Max) | VceSaturation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TLP627M(TP1,EOPTOIOSOLATOR DARLINGTON Toshiba Semiconductor and Storage |
3,930 | - |
RFQ |
Tape & Reel (TR) | - | Active | 1 | 5000Vrms | 1000% @ 1mA | - | 110µs, 30µs | 60µs, 30µs | DC | Darlington | 300V | 150mA | 1.25V | 50 mA | 1.2V | -55°C ~ 110°C | Surface Mount | |
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TLP627M(TP5,EOPTOIOSOLATOR DARLINGTON Toshiba Semiconductor and Storage |
2,181 | - |
RFQ |
Tape & Reel (TR) | - | Active | 1 | 5000Vrms | 1000% @ 1mA | - | 110µs, 30µs | 60µs, 30µs | DC | Darlington | 300V | 150mA | 1.25V | 50 mA | 1.2V | -55°C ~ 110°C | Surface Mount | |
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TLP627M(D4-TP1,EDC INPUT PHOTOCOUPLER; DIP4; ; V Toshiba Semiconductor and Storage |
3,117 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | 1 | 5000Vrms | 1000% @ 1mA | - | 110µs, 30µs | 60µs, 30µs | DC | Darlington | 300V | 150mA | 1.25V | 50 mA | 1.2V | -55°C ~ 110°C | Surface Mount |
|
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TLP627M(D4-TP5,EDC INPUT PHOTOCOUPLER; DIP4; ; V Toshiba Semiconductor and Storage |
3,039 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | 1 | 5000Vrms | 1000% @ 1mA | - | 110µs, 30µs | 60µs, 30µs | DC | Darlington | 300V | 150mA | 1.25V | 50 mA | 1.2V | -55°C ~ 110°C | Surface Mount |
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TLP627MF(TP4,EDC INPUT PHOTOCOUPLER; DIP4; WID Toshiba Semiconductor and Storage |
3,848 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | 1 | 5000Vrms | 1000% @ 1mA | - | 110µs, 30µs | 60µs, 30µs | DC | Darlington | 300V | 150mA | 1.25V | 50 mA | 1.2V | -55°C ~ 110°C | Surface Mount |
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TLP627MF(D4-T4,EDC INPUT PHOTOCOUPLER; DIP4; WID Toshiba Semiconductor and Storage |
2,121 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | 1 | 5000Vrms | 1000% @ 1mA | - | 110µs, 30µs | 60µs, 30µs | DC | Darlington | 300V | 150mA | 1.25V | 50 mA | 1.2V | -55°C ~ 110°C | Through Hole |
|
|
TLP388(D4,ETRANSISTOR OPTOCOUPLER; HIGH VCE Toshiba Semiconductor and Storage |
2,967 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 50% @ 5mA | 600% @ 5mA | 3µs, 3µs | 2µs, 3µs | DC | Transistor | 350V | 50mA | 1.25V | 50 mA | 400mV | -55°C ~ 125°C | Surface Mount |
|
|
TLP388(GB,ETRANSISTOR OPTOCOUPLER; HIGH VCE Toshiba Semiconductor and Storage |
3,087 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 100% @ 5mA | 600% @ 5mA | 3µs, 3µs | 2µs, 3µs | DC | Transistor | 350V | 50mA | 1.25V | 50 mA | 400mV | -55°C ~ 125°C | Surface Mount |
|
|
TLP388(D4-GB,ETRANSISTOR OPTOCOUPLER; HIGH VCE Toshiba Semiconductor and Storage |
2,534 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 100% @ 5mA | 600% @ 5mA | 3µs, 3µs | 2µs, 3µs | DC | Transistor | 350V | 50mA | 1.25V | 50 mA | 400mV | -55°C ~ 125°C | Surface Mount |
|
|
TLP388(ETRANSISTOR OPTOCOUPLER; HIGH VCE Toshiba Semiconductor and Storage |
3,408 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 50% @ 5mA | 600% @ 5mA | 3µs, 3µs | 2µs, 3µs | DC | Transistor | 350V | 50mA | 1.25V | 50 mA | 400mV | -55°C ~ 125°C | Surface Mount |
|
TLP187(TPR,EX36 PB-F PHOTOCOUPLER ROHS SO6 T Toshiba Semiconductor and Storage |
3,837 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 1 | 3750Vrms | 1000% @ 1mA | - | 50µs, 15µs | 40µs, 15µs | DC | Darlington | 300V | 150mA | 1.25V | 50 mA | 1.2V | -55°C ~ 110°C | Surface Mount |
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TLP2303(EX36 PB-F PHOTOCOUPLER SO6 BULK Toshiba Semiconductor and Storage |
2,334 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 3750Vrms | 500% @ 5mA | - | - | - | DC | Transistor | 18V | 80mA | - | 20 mA | - | -40°C ~ 125°C | Surface Mount |
|
|
TLP188(GB,ETRANSISTOR COUPLER; DC INPUT,VCE Toshiba Semiconductor and Storage |
3,129 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 3750Vrms | 100% @ 5mA | 600% @ 5mA | 3µs, 3µs | 2µs, 3µs | DC | Transistor | 350V | 50mA | 1.25V | 50 mA | 400mV | -55°C ~ 110°C | Surface Mount |
|
|
TLP387(ETRANSISTOR OPTOCOUPLER; HIGH VCE Toshiba Semiconductor and Storage |
2,173 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 1000% @ 1mA | - | 50µs, 15µs | 40µs, 15µs | DC | Darlington | 300V | 150mA | 1.25V | 50 mA | 1.2V | -55°C ~ 110°C | Surface Mount |
|
|
TLP387(D4,ETRANSISTOR OPTOCOUPLER; HIGH VCE Toshiba Semiconductor and Storage |
3,871 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 1000% @ 1mA | - | 50µs, 15µs | 40µs, 15µs | DC | Darlington | 300V | 150mA | 1.25V | 50 mA | 1.2V | -55°C ~ 110°C | Surface Mount |
|
|
TLP628MF(GB,ETR COUPLER; DIP4 WIDE CREEPAGE; Toshiba Semiconductor and Storage |
3,575 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 100% @ 5mA | 600% @ 5mA | 10µs, 10µs | 5.5µs, 10µs | DC | Transistor | 350V | 50mA | 1.25V | 50 mA | 400mV | -55°C ~ 125°C | Through Hole |
|
|
TLP628M(GB-LF1,ETR COUPLER; DIP4; ROHS; GULL WIN Toshiba Semiconductor and Storage |
2,485 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 100% @ 5mA | 600% @ 5mA | 10µs, 10µs | 5.5µs, 10µs | DC | Transistor | 350V | 50mA | 1.25V | 50 mA | 400mV | -55°C ~ 125°C | Surface Mount |
|
|
TLP628M(LF1,ETR COUPLER; DIP4; ROHS; GULL WIN Toshiba Semiconductor and Storage |
3,702 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 50% @ 5mA | 600% @ 5mA | 10µs, 10µs | 5.5µs, 10µs | DC | Transistor | 350V | 50mA | 1.25V | 50 mA | 400mV | -55°C ~ 125°C | Surface Mount |
|
|
TLP628M(GB-LF5,ETR COUPLER; DIP4; ROHS; GULL WIN Toshiba Semiconductor and Storage |
3,055 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 100% @ 5mA | 600% @ 5mA | 10µs, 10µs | 5.5µs, 10µs | DC | Transistor | 350V | 50mA | 1.25V | 50 mA | 400mV | -55°C ~ 125°C | Surface Mount |
|
|
TLP628M(ETR COUPLER; DIP4; ROHS; Toshiba Semiconductor and Storage |
2,166 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 | 5000Vrms | 50% @ 5mA | 600% @ 5mA | 10µs, 10µs | 5.5µs, 10µs | DC | Transistor | 350V | 50mA | 1.25V | 50 mA | 400mV | -55°C ~ 125°C | Through Hole |
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