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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BA158G R0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
2,568 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
|
|
FR104G R0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
2,133 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
BA157GHR0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,423 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
|
ES1JL RVGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
3,414 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
BA158GHR0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
2,801 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
|
S1G M2GDIODE GEN PURP 400V 1A DO214AC Taiwan Semiconductor Corporation |
3,762 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
S1J M2GDIODE GEN PURP 600V 1A DO214AC Taiwan Semiconductor Corporation |
2,754 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
S1K M2GDIODE GEN PURP 800V 1A DO214AC Taiwan Semiconductor Corporation |
2,467 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 800 V | 800 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
RS1JLWHRVGDIODE GEN PURP 600V 1A SOD123W Taiwan Semiconductor Corporation |
2,437 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 150 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.3 V @ 1 A | |
|
|
RS1MLWHRVGDIODE GEN PURP 1KV 1A SOD123W Taiwan Semiconductor Corporation |
3,357 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 250 ns | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 175°C | 1.3 V @ 1 A | |
|
SS23M RSGDIODE SCHOTTKY 30V 2A MICRO SMA Taiwan Semiconductor Corporation |
3,367 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 35pF @ 4V, 1MHz | - | 150 µA @ 30 V | 30 V | 2A | -55°C ~ 150°C | 600 mV @ 2 A | |
|
1T4G R0GDIODE GEN PURP 400V 1A TS-1 Taiwan Semiconductor Corporation |
3,574 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
1T5G R0GDIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation |
2,865 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
1T6G R0GDIODE GEN PURP 800V 1A TS-1 Taiwan Semiconductor Corporation |
2,264 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
1T7G R0GDIODE GEN PURP 1A TS-1 Taiwan Semiconductor Corporation |
3,239 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
S1DHM2GDIODE GEN PURP 200V 1A DO214AC Taiwan Semiconductor Corporation |
2,974 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
|
S1GHM2GDIODE GEN PURP 400V 1A DO214AC Taiwan Semiconductor Corporation |
2,851 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
|
S1JHM2GDIODE GEN PURP 600V 1A DO214AC Taiwan Semiconductor Corporation |
2,792 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
|
S1M M2GDIODE GEN PURP 1000V 1A DO214AC Taiwan Semiconductor Corporation |
2,663 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 1000 V | - | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
SS210L RVGDIODE SCHOTTKY 100V 2A SUB SMA Taiwan Semiconductor Corporation |
3,097 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A |
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