Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
DSI45-16A

DSI45-16A

DIODE GEN PURP 1.6KV 45A TO247AD

IXYS
2,072 -

RFQ

DSI45-16A

Ficha técnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 20 µA @ 1600 V 1600 V 45A -40°C ~ 175°C 1.28 V @ 45 A
DSEI30-10AR

DSEI30-10AR

DIODE GP 1KV 30A ISOPLUS247

IXYS
3,995 -

RFQ

DSEI30-10AR

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 750 µA @ 1000 V 1000 V 30A -40°C ~ 150°C 2.4 V @ 36 A
DLA60I1200HA

DLA60I1200HA

DIODE GEN PURP 1200V 60A TO247AD

IXYS
2,718 -

RFQ

DLA60I1200HA

Ficha técnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 33pF @ 400V, 1MHz - 30 µA @ 1200 V 1200 V 60A -55°C ~ 175°C 1.19 V @ 60 A
DSEP30-06BR

DSEP30-06BR

DIODE GP 600V 30A ISOPLUS247

IXYS
2,872 -

RFQ

DSEP30-06BR

Ficha técnica

Tube HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 250 µA @ 600 V 600 V 30A -55°C ~ 175°C 2.51 V @ 30 A
DSI45-16AR

DSI45-16AR

DIODE GP 1.6KV 48A ISOPLUS247

IXYS
3,605 -

RFQ

DSI45-16AR

Ficha técnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 3 mA @ 1600 V 1600 V 48A -40°C ~ 175°C 1.18 V @ 40 A
DSEI60-12A

DSEI60-12A

DIODE GEN PURP 1.2KV 52A TO247AD

IXYS
3,290 -

RFQ

DSEI60-12A

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 60 ns 2.2 mA @ 1200 V 1200 V 52A -40°C ~ 150°C 2.55 V @ 60 A
DSEP30-12AR

DSEP30-12AR

DIODE GP 1.2KV 30A ISOPLUS247

IXYS
2,215 -

RFQ

DSEP30-12AR

Ficha técnica

Tube HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 40 ns 250 µA @ 1200 V 1200 V 30A -55°C ~ 175°C 2.74 V @ 30 A
DLA40IM800PC-TRL

DLA40IM800PC-TRL

DIODE GEN PURP 800V 40A TO263

IXYS
3,916 -

RFQ

DLA40IM800PC-TRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 400V, 1MHz - 10 µA @ 800 V 800 V 40A -55°C ~ 175°C 1.3 V @ 40 A
DSEI12-06A

DSEI12-06A

DIODE GEN PURP 600V 14A TO220AC

IXYS
2,671 -

RFQ

DSEI12-06A

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 50 µA @ 600 V 600 V 14A -40°C ~ 150°C 1.7 V @ 16 A
DSEP8-12A

DSEP8-12A

DIODE GEN PURP 1.2KV 10A TO220AC

IXYS
2,652 -

RFQ

DSEP8-12A

Ficha técnica

Tube HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 40 ns 60 µA @ 1200 V 1200 V 10A -55°C ~ 175°C 2.94 V @ 10 A
DSEP15-12CR

DSEP15-12CR

DIODE GP 1.2KV 15A ISOPLUS247

IXYS
3,430 -

RFQ

DSEP15-12CR

Ficha técnica

Tube HiPerDynFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 20 ns 100 µA @ 1200 V 1200 V 15A -55°C ~ 175°C 4.04 V @ 15 A
DNA30E2200FE

DNA30E2200FE

DIODE GEN PURP 2.2KV 30A I4PAC

IXYS
3,951 -

RFQ

DNA30E2200FE

Ficha técnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 7pF @ 700V, 1MHz - 40 µA @ 2200 V 2200 V 30A -55°C ~ 175°C 1.25 V @ 30 A
DSEP60-12A

DSEP60-12A

DIODE GEN PURP 1.2KV 60A TO247AD

IXYS
2,155 -

RFQ

DSEP60-12A

Ficha técnica

Tube HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 40 ns 650 µA @ 1200 V 1200 V 60A -55°C ~ 175°C 2.66 V @ 60 A
DSEP60-06A

DSEP60-06A

DIODE GEN PURP 600V 60A TO247AD

IXYS
2,392 -

RFQ

DSEP60-06A

Ficha técnica

Tube HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 650 µA @ 600 V 600 V 60A -55°C ~ 175°C 2.04 V @ 60 A
DHG10I1200PM

DHG10I1200PM

DIODE GEN PURP 1.2KV 10A TO220FP

IXYS
3,047 -

RFQ

DHG10I1200PM

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 15 µA @ 1200 V 1200 V 10A -55°C ~ 150°C 2.69 V @ 10 A
DSEP30-12CR

DSEP30-12CR

DIODE GP 1.2KV 30A ISOPLUS247

IXYS
3,088 -

RFQ

DSEP30-12CR

Ficha técnica

Tube HiPerDynFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 15 ns 250 µA @ 1200 V 1200 V 30A -55°C ~ 175°C 4.98 V @ 30 A
DSP45-16AZ-TUB

DSP45-16AZ-TUB

POWER DIODE DISCRETES-RECTIFIER

IXYS
3,961 -

RFQ

DSP45-16AZ-TUB

Ficha técnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 19pF @ 400V, 1MHz - 40 µA @ 1600 V 1600 V 45A -40°C ~ 175°C 1.26 V @ 45 A
DSEP60-12AR

DSEP60-12AR

DIODE GP 1.2KV 60A ISOPLUS247

IXYS
2,127 -

RFQ

DSEP60-12AR

Ficha técnica

Tube HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 40 ns 650 µA @ 1200 V 1200 V 60A -55°C ~ 175°C 2.66 V @ 60 A
DSI30-08AS-TUB

DSI30-08AS-TUB

DIODE GEN PURP 800V 30A TO263

IXYS
2,036 -

RFQ

DSI30-08AS-TUB

Ficha técnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 400V, 1MHz - 40 µA @ 800 V 800 V 30A -40°C ~ 175°C 1.29 V @ 30 A
DSI30-12A

DSI30-12A

DIODE GEN PURP 1.2KV 30A TO220AC

IXYS
3,590 -

RFQ

DSI30-12A

Ficha técnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 400V, 1MHz - 40 µA @ 1200 V 1200 V 30A -40°C ~ 175°C 1.29 V @ 30 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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