Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
DPG60IM300PC-TRL

DPG60IM300PC-TRL

DIODE GEN PURP 300V 60A TO263

IXYS
2,526 -

RFQ

DPG60IM300PC-TRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HiPerFRED²™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 1 µA @ 300 V 300 V 60A -55°C ~ 175°C 1.43 V @ 60 A
UGE3126AY4

UGE3126AY4

DIODE GEN PURP 24KV 2A UGE

IXYS
2,169 -

RFQ

UGE3126AY4

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 1 mA @ 24000 V 24000 V 2A - 18 V @ 3 A
DSEP6-06AS-TRL

DSEP6-06AS-TRL

DIODE GEN PURP 600V 6A TO252AA

IXYS
2,326 -

RFQ

DSEP6-06AS-TRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 20 ns 50 µA @ 600 V 600 V 6A -40°C ~ 175°C 2.02 V @ 6 A
DPG15I200PA

DPG15I200PA

DIODE GEN PURP 200V 15A TO220AC

IXYS
2,892 -

RFQ

DPG15I200PA

Ficha técnica

Tube HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 1 µA @ 200 V 200 V 15A -55°C ~ 175°C 1.26 V @ 15 A
DPG15I400PM

DPG15I400PM

DIODE GEN PURP 400V 15A TO220FP

IXYS
2,651 -

RFQ

DPG15I400PM

Ficha técnica

Tube HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 45 ns 1 µA @ 400 V 400 V 15A -55°C ~ 175°C 1.39 V @ 15 A
DHG10I1200PA

DHG10I1200PA

DIODE GEN PURP 1.2KV 10A TO220AC

IXYS
2,323 -

RFQ

DHG10I1200PA

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 200 ns 15 µA @ 1200 V 1200 V 10A -55°C ~ 150°C 2.22 V @ 10 A
DSI30-12AS-TUB

DSI30-12AS-TUB

DIODE GEN PURP 1.2KV 30A TO263

IXYS
3,960 -

RFQ

DSI30-12AS-TUB

Ficha técnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 400V, 1MHz - 40 µA @ 1200 V 1200 V 30A -40°C ~ 175°C 1.29 V @ 30 A
DPG10IM300UC-TRL

DPG10IM300UC-TRL

DIODE GEN PURP 300V 10A TO252

IXYS
2,675 -

RFQ

DPG10IM300UC-TRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 1 µA @ 300 V 300 V 10A -55°C ~ 175°C 1.27 V @ 10 A
DSEI36-06AS-TUB

DSEI36-06AS-TUB

DIODE GEN PURP 600V 37A TO263AB

IXYS
3,802 -

RFQ

DSEI36-06AS-TUB

Ficha técnica

Tube FRED RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 100 µA @ 600 V 600 V 37A -40°C ~ 150°C 1.6 V @ 37 A
DSEP29-06A

DSEP29-06A

DIODE GEN PURP 600V 30A TO220AC

IXYS
2,198 -

RFQ

DSEP29-06A

Ficha técnica

Tube HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 250 µA @ 600 V 600 V 30A -55°C ~ 175°C 1.61 V @ 30 A
DPG30I400HA

DPG30I400HA

DIODE GEN PURP 400V 30A TO247

IXYS
2,791 -

RFQ

DPG30I400HA

Ficha técnica

Tube HiPerFRED²™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 32pF @ 200V, 1MHz 45 ns 1 µA @ 400 V 400 V 30A -55°C ~ 175°C 1.41 V @ 30 A
DSI45-08A

DSI45-08A

DIODE GEN PURP 800V 45A TO247AD

IXYS
3,234 -

RFQ

DSI45-08A

Ficha técnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 20 µA @ 800 V 800 V 45A -40°C ~ 175°C 1.28 V @ 45 A
DSEI30-12A

DSEI30-12A

DIODE GEN PURP 1.2KV 26A TO247AD

IXYS
2,797 -

RFQ

DSEI30-12A

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 60 ns 750 µA @ 1200 V 1200 V 26A -40°C ~ 150°C 2.55 V @ 30 A
DSA1-12D

DSA1-12D

DIODE AVALANCHE 1.2KV 2.3A

IXYS
2,608 -

RFQ

DSA1-12D

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole - - 700 µA @ 1200 V 1200 V 2.3A -40°C ~ 150°C 1.34 V @ 7 A
DNA30E2200PA

DNA30E2200PA

DIODE GEN PURP 2.2KV 30A TO220AC

IXYS
3,513 -

RFQ

DNA30E2200PA

Ficha técnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 7pF @ 700V, 1MHz - 40 µA @ 2200 V 2200 V 30A -55°C ~ 175°C 1.26 V @ 30 A
DFE10I600PM

DFE10I600PM

DIODE GEN PURP 600V 10A TO220FP

IXYS
3,069 -

RFQ

DFE10I600PM

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 20 µA @ 600 V 600 V 10A -55°C ~ 150°C 1.5 V @ 10 A
DPG60I300HA

DPG60I300HA

DIODE GEN PURP 300V 60A TO247

IXYS
3,651 -

RFQ

DPG60I300HA

Ficha técnica

Tube HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 1 µA @ 300 V 300 V 60A -55°C ~ 175°C 1.4 V @ 60 A
DPG60I400HA

DPG60I400HA

DIODE GEN PURP 400V 60A TO247

IXYS
3,721 -

RFQ

DPG60I400HA

Ficha técnica

Tube HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 45 ns 1 µA @ 400 V 400 V 60A -55°C ~ 175°C 1.47 V @ 60 A
DSEP30-06A

DSEP30-06A

DIODE GEN PURP 600V 30A TO247AD

IXYS
3,187 -

RFQ

DSEP30-06A

Ficha técnica

Tube HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 250 µA @ 600 V 600 V 30A -55°C ~ 175°C 1.6 V @ 30 A
DSA1-16D

DSA1-16D

DIODE AVALANCHE 1.6KV 2.3A

IXYS
3,833 -

RFQ

DSA1-16D

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole - - 700 µA @ 1600 V 1600 V 2.3A -40°C ~ 150°C 1.34 V @ 7 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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