Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SIC20120PTA-BP

SIC20120PTA-BP

1200V,20A,SIC SBD,TO-247 PACKAGE

Micro Commercial Co
1,800 -

RFQ

SIC20120PTA-BP

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 750pF @ 0V, 1MHz - 2 µA @ 1200 V 1200 V 10A -55°C ~ 175°C 1.8 V @ 10 A
65DN06B02ELEMXPSA1

65DN06B02ELEMXPSA1

STD THYR/DIODEN DISC

Infineon Technologies
2,930 -

RFQ

65DN06B02ELEMXPSA1

Ficha técnica

Tray RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 100 mA @ 600 V 600 V 15130A 180°C (Max) 890 mV @ 8000 A
SCS220KGHRC

SCS220KGHRC

DIODE SCHOTTKY 1200V 20A TO220-2

Rohm Semiconductor
314 -

RFQ

SCS220KGHRC

Ficha técnica

Tube Automotive, AEC-Q101 RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Through Hole 1060pF @ 1V, 1MHz 0 ns 400 µA @ 1200 V 1200 V 20A (DC) 175°C (Max) 1.6 V @ 20 A
DD600S16K4NOSA1

DD600S16K4NOSA1

RECTIFIER DIODE MODULE

Rochester Electronics, LLC
3,472 -

RFQ

DD600S16K4NOSA1

Ficha técnica

Bulk RoHS - - Active - - - - - - - -
MBRP30035L

MBRP30035L

RECTIFIER, SCHOTTKY, 300A, 35V

Rochester Electronics, LLC
5,092 -

RFQ

MBRP30035L

Ficha técnica

Bulk RoHS - - Active - - - - - - - -
DD400S17K4C

DD400S17K4C

RECTIFIER DIODE MODULE

Rochester Electronics, LLC
3,072 -

RFQ

Bulk RoHS - - Active - - - - - - - -
NTE5932

NTE5932

R-1000 PRV 20A CATH CASE

NTE Electronics, Inc
112 -

RFQ

NTE5932

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 12 mA @ 1000 V 1000 V 20A -65°C ~ 175°C 1.23 V @ 63 A
DD600S17K3B2NOSA1

DD600S17K3B2NOSA1

RECTIFIER DIODE MODULE

Rochester Electronics, LLC
2,524 -

RFQ

DD600S17K3B2NOSA1

Ficha técnica

Bulk RoHS - - Active - - - - - - - -
50HQ045

50HQ045

60A, 45V, DO-5, SCHOTTKY RECTIFI

SMC Diode Solutions
133 -

RFQ

Box RoHS - - Active - - - - - - - -
DD1200S33KL2C_B5

DD1200S33KL2C_B5

RECTIFIER DIODE MODULE

Rochester Electronics, LLC
3,150 -

RFQ

DD1200S33KL2C_B5

Ficha técnica

Bulk RoHS - - Active - - - - - - - -
NTE6002

NTE6002

R-1000 PRV 40A CATH CASE

NTE Electronics, Inc
1,076 -

RFQ

NTE6002

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 9 mA @ 1000 V 1000 V 40A -65°C ~ 190°C 1.3 V @ 40 A
1N4148-TAP

1N4148-TAP

DIODE GEN PURP 75V 300MA DO35

Vishay General Semiconductor - Diodes Division
5,455 -

RFQ

1N4148-TAP

Ficha técnica

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 4pF @ 0V, 1MHz 8 ns 25 nA @ 20 V 75 V 300mA (DC) -65°C ~ 150°C 1 V @ 10 mA
NTE6042

NTE6042

R-800 PRV 60A CATH CASE

NTE Electronics, Inc
496 -

RFQ

NTE6042

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 10 mA @ 800 V 800 V 60A -65°C ~ 175°C 1.4 V @ 60 A
MMBD4448W-7-F

MMBD4448W-7-F

DIODE GEN PURP 75V 250MA SOT323

Diodes Incorporated
2,135 -

RFQ

MMBD4448W-7-F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 2pF @ 0V, 1MHz 4 ns 1 µA @ 75 V 75 V 250mA -65°C ~ 150°C 1.25 V @ 150 mA
NTE6043

NTE6043

R-800 PRV 60A ANODE CASE

NTE Electronics, Inc
284 -

RFQ

NTE6043

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 10 mA @ 800 V 800 V 60A -65°C ~ 175°C 1.4 V @ 60 A
1N4454TR

1N4454TR

DIODE GEN PURP 50V 200MA DO35

onsemi
3,418 -

RFQ

1N4454TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 4pF @ 0V, 1MHz 4 ns 100 nA @ 50 V 50 V 200mA 175°C (Max) 1 V @ 10 mA
C4D15120H

C4D15120H

ZRECTM 15A 1200V SIC SCHOTTKY DI

Wolfspeed, Inc.
379 -

RFQ

C4D15120H

Ficha técnica

Tube Z-Rec® RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1.2nF @ 0V, 1MHz 0 ns 200 µA @ 1200 V 1200 V 39A (DC) -55°C ~ 175°C 1.8 V @ 15 A
BAS20LT3G

BAS20LT3G

DIODE GP 200V 200MA SOT23-3

onsemi
3,070 -

RFQ

BAS20LT3G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 5pF @ 0V, 1MHz 50 ns 100 nA @ 150 V 200 V 200mA (DC) -55°C ~ 150°C 1.25 V @ 200 mA
GD50MPS12H

GD50MPS12H

1200V 50A TO-247-2 SIC SCHOTTKY

GeneSiC Semiconductor
491 -

RFQ

GD50MPS12H

Ficha técnica

Tube SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1.835nF @ 1V, 1MHz 0 ns 15 µA @ 1200 V 1200 V 92A (DC) -55°C ~ 175°C 1.8 V @ 50 A
STPS0520M

STPS0520M

DIODE SCHOTTKY 20V 500MA STMITE

STMicroelectronics
6,783 -

RFQ

STPS0520M

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 50 µA @ 20 V 20 V 500mA 150°C (Max) 385 mV @ 500 mA
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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