Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VS-10TQ045STRLHM3

VS-10TQ045STRLHM3

DIODE SCHOTTKY 45V 10A D2PAK

Vishay General Semiconductor - Diodes Division
3,214 -

RFQ

VS-10TQ045STRLHM3

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 900pF @ 5V, 1MHz - 2 mA @ 45 V 45 V 10A -55°C ~ 175°C 570 mV @ 10 A
VS-12TQ045STRL-M3

VS-12TQ045STRL-M3

DIODE SCHOTTKY 45V 15A D2PAK

Vishay General Semiconductor - Diodes Division
3,173 -

RFQ

VS-12TQ045STRL-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 900pF @ 5V, 1MHz - 1.75 mA @ 45 V 45 V 15A -55°C ~ 150°C 560 mV @ 15 A
VS-E5TH3012-N3

VS-E5TH3012-N3

DIODE FREDS 1200V 30A TO-220

Vishay General Semiconductor - Diodes Division
2,223 -

RFQ

VS-E5TH3012-N3

Ficha técnica

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 113 ns 50 µA @ 1200 V 1200 V 30A -55°C ~ 175°C 2.3 V @ 30 A
1N482B

1N482B

DIODE GEN PURP 30V 200MA DO35

Microchip Technology
3,597 -

RFQ

1N482B

Ficha técnica

Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole - - 25 nA @ 30 V 30 V 200mA -65°C ~ 200°C 1 V @ 100 mA
SDT15H100P5-13

SDT15H100P5-13

SCHOTTKY RECTIFIER PDI5 T&R 5K

Diodes Incorporated
3,315 -

RFQ

SDT15H100P5-13

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 250 µA @ 100 V 100 V 15A -55°C ~ 150°C 660 mV @ 15 A
V12P8-M3/86A

V12P8-M3/86A

DIODE SCHOTTKY 80V 4.3A TO277A

Vishay General Semiconductor - Diodes Division
3,786 -

RFQ

V12P8-M3/86A

Ficha técnica

Tape & Reel (TR) eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 1 mA @ 80 V 80 V 4.3A -40°C ~ 150°C 660 mV @ 12 A
UJ3D06530TS

UJ3D06530TS

650V 30A SIC SCHOTTKY DIODE G3,

UnitedSiC
829 -

RFQ

UJ3D06530TS

Ficha técnica

Tube Gen-III RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 990pF @ 1V, 1MHz 0 ns 370 µA @ 650 V 650 V 30A (DC) -55°C ~ 175°C 1.7 V @ 30 A
NTE6108

NTE6108

R-1600PRV 550A CATHODE

NTE Electronics, Inc
2,578 -

RFQ

NTE6108

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - 9 µs 50 mA @ 1600 V 1600 V 300A -65°C ~ 200°C 2.15 V @ 1500 A
GD30MPS12J

GD30MPS12J

1200V 30A TO-263-7 SIC SCHOTTKY

GeneSiC Semiconductor
928 -

RFQ

Tube SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount - 0 ns - 1200 V 30A (DC) 175°C -
56DN06B02ELEMXPSA1

56DN06B02ELEMXPSA1

STD THYR/DIODEN DISC

Infineon Technologies
3,094 -

RFQ

56DN06B02ELEMXPSA1

Ficha técnica

Tray RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 60 mA @ 600 V 600 V 11140A 180°C (Max) 940 mV @ 8000 A
NTE5920

NTE5920

R-400PRV 20A CATH CASE

NTE Electronics, Inc
105 -

RFQ

NTE5920

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 12 mA @ 400 V 400 V 20A -65°C ~ 175°C 1.23 V @ 63 A
DZ435N40KHPSA1

DZ435N40KHPSA1

DIODE GEN PURP 4KV 700A MODULE

Infineon Technologies
3,998 -

RFQ

DZ435N40KHPSA1

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 50 mA @ 4000 V 4000 V 700A -40°C ~ 150°C 1.71 V @ 1200 A
NTE6074

NTE6074

R-200 PRV 85A CATH CASE

NTE Electronics, Inc
247 -

RFQ

NTE6074

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 2 mA @ 200 V 200 V 85A -65°C ~ 190°C 1.15 V @ 200 A
NTE6116

NTE6116

R-600PRV 2200A

NTE Electronics, Inc
3,091 -

RFQ

NTE6116

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 75 mA @ 600 V 600 V 3000A -40°C ~ 180°C 1.41 V @ 4000 A
NTE5890

NTE5890

R-1000 PRV 12A CATH CASE

NTE Electronics, Inc
120 -

RFQ

NTE5890

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 12 mA @ 1000 V 1000 V 12A -65°C ~ 175°C 1.26 V @ 38 A
NTE6118

NTE6118

R-1200PRV 2200A

NTE Electronics, Inc
2,042 -

RFQ

NTE6118

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 75 mA @ 1200 V 1200 V 3000A -40°C ~ 180°C 1.41 V @ 4000 A
150K60A

150K60A

RECT 150 AMP 600 V DO8

Solid State Inc.
4,950 -

RFQ

150K60A

Ficha técnica

Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 35 mA @ 600 V 600 V 150A -65°C ~ 200°C 1.33 V @ 471 A
NTE6122

NTE6122

R-1600V 2200A

NTE Electronics, Inc
3,933 -

RFQ

NTE6122

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 75 mA @ 1600 V 1600 V 3000A -40°C ~ 180°C 1.41 V @ 4000 A
NTE5828

NTE5828

R-800 PRV 50 A CATH CASE

NTE Electronics, Inc
167 -

RFQ

NTE5828

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 200 µA @ 800 V 800 V 50A -65°C ~ 195°C 1 V @ 50 A
DD800S17HA_B2

DD800S17HA_B2

RECTIFIER DIODE MODULE

Rochester Electronics, LLC
3,211 -

RFQ

Bulk RoHS - - Active - - - - - - - -
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15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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