Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
1N1188

1N1188

DIODE GEN PURP 400V 35A DO5

GeneSiC Semiconductor
2,072 -

RFQ

1N1188

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 400 V 35A -65°C ~ 190°C 1.2 V @ 35 A
1N1190R

1N1190R

DIODE GEN PURP REV 600V 35A DO5

GeneSiC Semiconductor
3,210 -

RFQ

1N1190R

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 600 V 35A -65°C ~ 190°C 1.2 V @ 35 A
1N3768

1N3768

DIODE GEN PURP 1KV 35A DO5

GeneSiC Semiconductor
2,495 -

RFQ

1N3768

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 1000 V 35A -65°C ~ 190°C 1.2 V @ 35 A
FR6GR05

FR6GR05

DIODE GEN PURP REV 400V 16A DO4

GeneSiC Semiconductor
2,019 -

RFQ

FR6GR05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 500 ns 25 µA @ 50 V 400 V 16A -65°C ~ 150°C 1.4 V @ 6 A
1N1183

1N1183

DIODE GEN PURP 50V 35A DO203AB

GeneSiC Semiconductor
3,493 -

RFQ

1N1183

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 50 V 35A -65°C ~ 190°C 1.2 V @ 35 A
FR70G02

FR70G02

DIODE GEN PURP 400V 70A DO5

GeneSiC Semiconductor
3,310 -

RFQ

FR70G02

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 25 µA @ 100 V 400 V 70A -40°C ~ 125°C 1.4 V @ 70 A
1N1183R

1N1183R

DIODE GEN PURP REV 50V 35A DO5

GeneSiC Semiconductor
3,084 -

RFQ

1N1183R

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 50 V 35A -65°C ~ 190°C 1.2 V @ 35 A
1N1186

1N1186

DIODE GEN PURP 200V 35A DO5

GeneSiC Semiconductor
2,746 -

RFQ

1N1186

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 200 V 35A -65°C ~ 190°C 1.2 V @ 35 A
1N1186R

1N1186R

DIODE GEN PURP REV 200V 35A DO5

GeneSiC Semiconductor
2,291 -

RFQ

1N1186R

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 200 V 35A -65°C ~ 190°C 1.2 V @ 35 A
1N1187

1N1187

DIODE GEN PURP 300V 35A DO5

GeneSiC Semiconductor
2,638 -

RFQ

1N1187

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 300 V 35A -65°C ~ 190°C 1.2 V @ 35 A
1N1187R

1N1187R

DIODE GEN PURP REV 300V 35A DO5

GeneSiC Semiconductor
2,063 -

RFQ

1N1187R

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 300 V 35A -65°C ~ 190°C 1.2 V @ 35 A
1N1189

1N1189

DIODE GEN PURP 600V 35A DO5

GeneSiC Semiconductor
3,735 -

RFQ

1N1189

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 600 V 35A -65°C ~ 190°C 1.2 V @ 35 A
1N1189R

1N1189R

DIODE GEN PURP REV 600V 35A DO5

GeneSiC Semiconductor
2,163 -

RFQ

1N1189R

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 600 V 35A -65°C ~ 190°C 1.2 V @ 35 A
1N3765

1N3765

DIODE GEN PURP 700V 35A DO5

GeneSiC Semiconductor
3,859 -

RFQ

1N3765

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 700 V 35A -65°C ~ 190°C 1.2 V @ 35 A
1N3765R

1N3765R

DIODE GEN PURP REV 700V 35A DO5

GeneSiC Semiconductor
2,399 -

RFQ

1N3765R

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 700 V 35A -65°C ~ 190°C 1.2 V @ 35 A
1N3766

1N3766

DIODE GEN PURP 800V 35A DO5

GeneSiC Semiconductor
2,174 -

RFQ

1N3766

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 800 V 35A -65°C ~ 190°C 1.2 V @ 35 A
1N3766R

1N3766R

DIODE GEN PURP REV 800V 35A DO5

GeneSiC Semiconductor
3,757 -

RFQ

1N3766R

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 800 V 35A -65°C ~ 190°C 1.2 V @ 35 A
1N3767

1N3767

DIODE GEN PURP 900V 35A DO5

GeneSiC Semiconductor
3,728 -

RFQ

1N3767

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 900 V 35A -65°C ~ 190°C 1.2 V @ 35 A
1N3767R

1N3767R

DIODE GEN PURP REV 900V 35A DO5

GeneSiC Semiconductor
3,409 -

RFQ

1N3767R

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 900 V 35A -65°C ~ 190°C 1.2 V @ 35 A
FR12B02

FR12B02

DIODE GEN PURP 100V 12A DO4

GeneSiC Semiconductor
3,507 -

RFQ

FR12B02

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 25 µA @ 100 V 100 V 12A -65°C ~ 150°C 800 mV @ 12 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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