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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-240UR120DDIODE GEN PURP 1.2KV 320A DO205 Vishay General Semiconductor - Diodes Division |
2,541 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | 15 mA @ 1200 V | 1200 V | 320A | -40°C ~ 180°C | 1.33 V @ 750 A | |
|
VS-SD300C08CDIODE GEN PURP 800V 650A DO200AA Vishay General Semiconductor - Diodes Division |
3,219 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Clamp On | - | - | 15 mA @ 800 V | 800 V | 650A | - | 2.08 V @ 1500 A | |
|
VS-50WQ04FNTRR-M3DIODE SCHOTTKY 40V 5.5A DPAK Vishay General Semiconductor - Diodes Division |
3,987 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 405pF @ 5V, 1MHz | - | 3 mA @ 40 V | 40 V | 5.5A | -40°C ~ 150°C | 510 mV @ 5 A | |
|
VS-4ECU06-M3/9ATDIODE GEN PURP 600V 4A SMC Vishay General Semiconductor - Diodes Division |
3,663 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 41 ns | 3 µA @ 600 V | 600 V | 4A | -55°C ~ 175°C | 1.3 V @ 4 A |
|
V12PM6-M3/HDIODE SCHOTTKY TMBS 12A 60V SMPC Vishay General Semiconductor - Diodes Division |
3,704 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2050pF @ 4V, 1MHz | - | 1 mA @ 60 V | 60 V | 12A | -40°C ~ 175°C | 640 mV @ 12 A |
|
V12PM6-M3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
3,418 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2050pF @ 4V, 1MHz | - | 1 mA @ 60 V | 60 V | 12A | -40°C ~ 175°C | 640 mV @ 12 A |
|
|
ES3AHE3_A/HDIODE GEN PURP 50V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,559 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A |
|
|
ES3BHE3_A/HDIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,477 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A |
|
|
ES3CHE3_A/HDIODE GEN PURP 150V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,025 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A |
|
SF4004-TAPDIODE AVAL 1A 400V SOD-57 Vishay General Semiconductor - Diodes Division |
3,454 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1 V @ 1 A | |
|
|
SF4005-TAPDIODE AVAL 1A 600V SOD-57 Vishay General Semiconductor - Diodes Division |
2,205 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.7 V @ 1 A | |
|
|
SF4006-TAPDIODE AVAL 1A 800V SOD-57 Vishay General Semiconductor - Diodes Division |
2,802 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 175°C | 1.7 V @ 1 A | |
|
|
SF4007-TAPDIODE AVAL 1A 1000V SOD-57 Vishay General Semiconductor - Diodes Division |
3,399 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 75 ns | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 175°C | 1.7 V @ 1 A | |
|
RS07G-GS18DIODE GP 400V 500MA DO219AB Vishay General Semiconductor - Diodes Division |
3,911 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 150 ns | 10 µA @ 400 V | 400 V | 500mA | -55°C ~ 150°C | 1.15 V @ 700 mA |
|
|
SF4004-TRDIODE AVAL 1A 400V SOD-57 Vishay General Semiconductor - Diodes Division |
3,358 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 76pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1 V @ 1 A | |
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SE20PABHM3/IDIODE GEN PURP 100V 1.6A DO220AA Vishay General Semiconductor - Diodes Division |
3,059 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 100 V | 100 V | 1.6A | -55°C ~ 175°C | 900 mV @ 1 A |
|
|
SF4005-TRDIODE AVAL 1A 600V SOD-57 Vishay General Semiconductor - Diodes Division |
3,219 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.7 V @ 1 A | |
|
|
SE20PAB-M3/IDIODE GEN PURP 100V 1.6A DO220AA Vishay General Semiconductor - Diodes Division |
2,920 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 100 V | 100 V | 1.6A | -55°C ~ 175°C | 1.05 V @ 2 A |
|
|
SF4006-TRDIODE AVAL 1A 800V SOD-57 Vishay General Semiconductor - Diodes Division |
2,941 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 175°C | 1.7 V @ 1 A | |
|
|
SE20PADHM3/IDIODE GEN PURP 200V 1.6A DO220AA Vishay General Semiconductor - Diodes Division |
3,948 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 200 V | 200 V | 1.6A | -55°C ~ 175°C | 1.05 V @ 2 A |
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