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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ESH3BHE3_A/IDIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,369 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 70pF @ 4V, 1MHz | 40 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A |
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UF4005-M3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,161 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
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ESH3CHE3_A/HDIODE GEN PURP 150V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,699 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 70pF @ 4V, 1MHz | 40 ns | 5 µA @ 150 V | 150 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A |
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UF4006-M3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,012 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
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ESH3CHE3_A/IDIODE GEN PURP 150V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,963 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 70pF @ 4V, 1MHz | 40 ns | 5 µA @ 150 V | 150 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A |
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ESH3DHE3_A/IDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,014 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 70pF @ 4V, 1MHz | 40 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A |
|
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MURS320HE3_A/IDIODE GEN PURP 200V 4A DO214AB Vishay General Semiconductor - Diodes Division |
3,599 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 200 V | 200 V | 4A | -65°C ~ 175°C | 890 mV @ 4 A |
|
VS-2EFH01HM3/IDIODE GEN PURP 100V 2A DO219AB Vishay General Semiconductor - Diodes Division |
3,808 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 16 ns | 2 µA @ 100 V | 100 V | 2A | -65°C ~ 175°C | 950 mV @ 2 A |
|
RS2J-M3/5BTDIODE GEN PURP 600V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
3,983 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 17pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
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RS2K-M3/5BTDIODE GEN PURP 800V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
3,570 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 17pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
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RS2J-M3/52TDIODE GEN PURP 600V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
3,990 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 17pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
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S10CJHM3/IDIODE GEN PURP 600V 10A DO214AB Vishay General Semiconductor - Diodes Division |
3,129 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 79pF @ 4V, 1MHz | 5 µs | 10 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 1 V @ 10 A |
|
VS-50WQ03FNTRL-M3DIODE SCHOTTKY 30V 5.5A DPAK Vishay General Semiconductor - Diodes Division |
3,676 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 590pF @ 5V, 1MHz | - | 3 mA @ 30 V | 30 V | 5.5A | -40°C ~ 150°C | 460 mV @ 5 A | |
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RS2K-M3/52TDIODE GEN PURP 800V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
2,993 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 17pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
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VS-50WQ03FNTRR-M3DIODE SCHOTTKY 30V 5.5A DPAK Vishay General Semiconductor - Diodes Division |
3,937 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 590pF @ 5V, 1MHz | - | 3 mA @ 30 V | 30 V | 5.5A | -40°C ~ 150°C | 460 mV @ 5 A | |
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VS-50WQ06FNTRR-M3DIODE SCHOTTKY 60V 5.5A DPAK Vishay General Semiconductor - Diodes Division |
3,725 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 360pF @ 5V, 1MHz | - | 3 mA @ 60 V | 60 V | 5.5A | -40°C ~ 150°C | 570 mV @ 5 A | |
|
V10P6-M3/87ADIODE SCHOTTKY 60V 4.3A TO277A Vishay General Semiconductor - Diodes Division |
3,332 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.9 mA @ 60 V | 60 V | 4.3A | -40°C ~ 150°C | 590 mV @ 10 A |
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VS-50WQ04FNTRL-M3DIODE SCHOTTKY 40V 5.5A DPAK Vishay General Semiconductor - Diodes Division |
3,788 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 405pF @ 5V, 1MHz | - | 3 mA @ 40 V | 40 V | 5.5A | -40°C ~ 150°C | 510 mV @ 5 A | |
|
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VS-VSKE71/16DIODE GEN PURP 1.6KV 80A ADDAPAK Vishay General Semiconductor - Diodes Division |
3,744 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 10 mA @ 1600 V | 1600 V | 80A | -40°C ~ 150°C | - | |
|
VS-150KSR10DIODE GEN PURP 100V 150A B42 Vishay General Semiconductor - Diodes Division |
3,712 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 35 mA @ 100 V | 100 V | 150A | -40°C ~ 200°C | 1.33 V @ 471 A |
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