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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-HFA04SD60SR-M3DIODE GEN PURP 600V 4A TO252 Vishay General Semiconductor - Diodes Division |
3,991 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 42 ns | 3 µA @ 600 V | 600 V | 4A | -65°C ~ 175°C | 1.8 V @ 4 A |
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VS-HFA04SD60STR-M3DIODE GEN PURP 600V 4A D-PAK Vishay General Semiconductor - Diodes Division |
3,479 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 42 ns | 3 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | 1.8 V @ 4 A |
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VS-1N1184ADIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,603 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 2.5 mA @ 100 V | 100 V | 40A | -65°C ~ 200°C | 1.3 V @ 126 A | |
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VS-1N1187ADIODE GEN PURP 300V 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,924 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 2.5 mA @ 300 V | 300 V | 40A | -65°C ~ 200°C | 1.3 V @ 126 A | |
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VS-85HFLR80S05DIODE GEN PURP 800V 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,782 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 800 V | 800 V | 85A | -40°C ~ 125°C | 1.75 V @ 266.9 A | |
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VS-1N1184RADIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,049 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 2.5 mA @ 100 V | 100 V | 40A | -65°C ~ 200°C | 1.3 V @ 126 A | |
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VS-30ETH06S-M3DIODE ULTRA FAST 600V 30A D2PAK Vishay General Semiconductor - Diodes Division |
3,667 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 50 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.6 V @ 30 A |
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BAT54W-G3-08DIODE SCHOTTKY 30V 200MA SOD123 Vishay General Semiconductor - Diodes Division |
2,580 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 800 mV @ 100 mA | |
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S1B-E3/61TDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,303 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
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VF30120SG-E3/4WDIODE SCHOTTKY 120V 30A ITO220AB Vishay General Semiconductor - Diodes Division |
2,656 | - |
RFQ |
Ficha técnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 120 V | 120 V | 30A | -40°C ~ 150°C | 1.28 V @ 30 A |
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VS-40HFL80S05DIODE GEN PURP 800V 40A DO203AB Vishay General Semiconductor - Diodes Division |
2,302 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 800 V | 800 V | 40A | -40°C ~ 125°C | 1.95 V @ 40 A | |
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FESB16AT-E3/45DIODE GEN PURP 50V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,688 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A | |
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VS-40HFLR80S05DIODE GEN PURP 800V 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,166 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 800 V | 800 V | 40A | -40°C ~ 125°C | 1.95 V @ 40 A | |
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VS-41HF40DIODE GEN PURP 400V 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,768 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 9 mA @ 400 V | 400 V | 40A | -65°C ~ 190°C | 1.3 V @ 125 A | |
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SA2M-E3/5ATDIODE GEN PURP 1KV 2A DO214AC Vishay General Semiconductor - Diodes Division |
2,241 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 11pF @ 4V, 1MHz | 1.5 µs | 3 µA @ 1000 V | 1000 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |
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FESB16BT-E3/45DIODE GEN PURP 100V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,991 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A | |
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VS-41HFR40DIODE GEN PURP 400V 40A DO203AB Vishay General Semiconductor - Diodes Division |
2,752 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 9 mA @ 400 V | 400 V | 40A | -65°C ~ 190°C | 1.3 V @ 125 A | |
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FESB16CT-E3/45DIODE GEN PURP 150V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,258 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A | |
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VS-8EWF10STR-M3DIODE GEN PURP 1KV 8A D-PAK Vishay General Semiconductor - Diodes Division |
3,604 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 270 ns | 100 µA @ 1000 V | 1000 V | 8A | -40°C ~ 150°C | 1.3 V @ 8 A | |
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VS-40HFL60S05DIODE GEN PURP 600V 40A DO203AB Vishay General Semiconductor - Diodes Division |
2,441 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 600 V | 600 V | 40A | -40°C ~ 125°C | 1.95 V @ 40 A |
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