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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ES3D-E3/57TDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
24,778 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
SS10PH10-M3/86ADIODE SCHOTTKY 100V 10A TO277A Vishay General Semiconductor - Diodes Division |
37,660 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 270pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 10A | -55°C ~ 175°C | 880 mV @ 10 A |
|
VS-72HFL100S05DIODE GEN PURP 1KV 70A DO203AB Vishay General Semiconductor - Diodes Division |
3,581 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 1000 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | ||
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VS-72HFLR100S05DIODE GEN PURP 1KV 70A DO203AB Vishay General Semiconductor - Diodes Division |
3,331 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1000 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | ||
|
VS-50WQ10FNTRL-M3DIODE SCHOTTKY 100V 5.5A DPAK Vishay General Semiconductor - Diodes Division |
9,007 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 183pF @ 5V, 1MHz | - | 1 mA @ 100 V | 100 V | 5.5A | -40°C ~ 150°C | 770 mV @ 5 A | |
|
|
SSC54-E3/57TDIODE SCHOTTKY 40V 5A DO214AB Vishay General Semiconductor - Diodes Division |
12,330 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 5A | -65°C ~ 150°C | 490 mV @ 5 A | |
|
BY203-20STAPDIODE AVALANCH 1.2KV 250MA SOD57 Vishay General Semiconductor - Diodes Division |
5,936 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 300 ns | 2 µA @ 1200 V | 2000 V | 250mA | -55°C ~ 150°C | 2.4 V @ 200 mA | |
|
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SS10P4-M3/86ADIODE SCHOTTKY 40V 10A TO277A Vishay General Semiconductor - Diodes Division |
9,872 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 750pF @ 4V, 1MHz | - | 800 µA @ 40 V | 40 V | 10A | -55°C ~ 150°C | 560 mV @ 10 A |
|
VS-8TQ100-M3DIODE SCHOTTKY 100V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,874 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 500pF @ 5V, 1MHz | - | 550 µA @ 100 V | 100 V | 8A | -55°C ~ 175°C | 880 mV @ 16 A | |
|
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VS-30BQ100-M3/9ATDIODE SCHOTTKY 3.0A SMC Vishay General Semiconductor - Diodes Division |
13,286 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 115pF @ 5V, 1MHz | - | 500 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 790 mV @ 3 A | |
|
VS-41HF140DIODE GEN PURP 1.4KV 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,312 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 4.5 mA @ 1400 V | 1400 V | 40A | -65°C ~ 160°C | 1.3 V @ 125 A | |
|
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VS-41HFR140DIODE GEN PURP 1.4KV 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,082 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 4.5 mA @ 1400 V | 1400 V | 40A | -65°C ~ 160°C | 1.5 V @ 125 A | |
|
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VS-70HFL10S05DIODE GEN PURP 100V 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,468 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 100 V | 100 V | 70A | -40°C ~ 125°C | 1.85 V @ 219.8 A | |
|
|
VS-70HFLR10S02DIODE GEN PURP 100V 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,168 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 200 ns | 100 µA @ 100 V | 100 V | 70A | -40°C ~ 125°C | 1.85 V @ 219.8 A | |
|
VS-SD1500C20LDIODE GEN PURP 2KV 1600A DO200AB Vishay General Semiconductor - Diodes Division |
3,163 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Clamp On | - | - | 50 mA @ 2000 V | 2000 V | 1600A | - | 1.64 V @ 3000 A | |
|
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VS-SD1053C28S30LDIODE GP 2.8KV 920A DO200AB Vishay General Semiconductor - Diodes Division |
2,247 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Clamp On | - | 3 µs | - | 2800 V | 920A | -40°C ~ 150°C | 2.26 V @ 1500 A | |
|
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VS-86HF20DIODE GEN PURP 200V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,114 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 9 mA @ 200 V | 200 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
VS-SD823C25S20CDIODE GEN PURP 2.5KV 810A B-43 Vishay General Semiconductor - Diodes Division |
3,831 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 2 µs | 50 mA @ 2500 V | 2500 V | 810A | - | 2.2 V @ 1500 A | |
|
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VS-86HFR20DIODE GEN PURP 200V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,813 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 9 mA @ 200 V | 200 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
|
VS-SD823C25S30CDIODE GEN PURP 2.5KV 910A B-43 Vishay General Semiconductor - Diodes Division |
2,968 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 3 µs | 50 mA @ 2500 V | 2500 V | 910A | - | 1.85 V @ 1500 A |
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