Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VS-307UA250P4

VS-307UA250P4

DIODE GEN PURP 2.5KV 300A DO9

Vishay General Semiconductor - Diodes Division
2,200 -

RFQ

VS-307UA250P4

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - - 2500 V 300A -40°C ~ 180°C 1.46 V @ 942 A
VS-86HFR10

VS-86HFR10

DIODE GEN PURP 100V 85A DO203AB

Vishay General Semiconductor - Diodes Division
2,033 -

RFQ

VS-86HFR10

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 9 mA @ 100 V 100 V 85A -65°C ~ 180°C 1.2 V @ 267 A
VS-307URA250P4

VS-307URA250P4

DIODE GEN PURP 2.5KV 300A DO9

Vishay General Semiconductor - Diodes Division
3,562 -

RFQ

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Stud Mount - - - 2500 V 300A -40°C ~ 180°C 1.46 V @ 942 A
VS-SD803C10S10C

VS-SD803C10S10C

DIODE GEN PURP 1KV 845A B-43

Vishay General Semiconductor - Diodes Division
3,922 -

RFQ

VS-SD803C10S10C

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - 1 µs 45 mA @ 1000 V 1000 V 845A - 1.89 V @ 2655 A
VS-87HFLR20S02

VS-87HFLR20S02

DIODE GEN PURP 200V 85A DO203AB

Vishay General Semiconductor - Diodes Division
2,658 -

RFQ

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - - 200 V 85A -65°C ~ 180°C 1.2 V @ 267 A
VS-86HF80

VS-86HF80

DIODE GEN PURP 800V 85A DO203AB

Vishay General Semiconductor - Diodes Division
2,195 -

RFQ

VS-86HF80

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 9 mA @ 800 V 800 V 85A -65°C ~ 180°C 1.2 V @ 267 A
VS-71HFR120

VS-71HFR120

DIODE GEN PURP 1.2KV 70A DO203AB

Vishay General Semiconductor - Diodes Division
3,936 -

RFQ

VS-71HFR120

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 9 mA @ 1200 V 1200 V 70A -65°C ~ 180°C 1.35 V @ 220 A
SS5P4-M3/86A

SS5P4-M3/86A

DIODE SCHOTTKY 40V 5A TO277A

Vishay General Semiconductor - Diodes Division
55,024 -

RFQ

SS5P4-M3/86A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 280pF @ 4V, 1MHz - 250 µA @ 40 V 40 V 5A -55°C ~ 150°C 520 mV @ 5 A
VS-10MQ100NTRPBF

VS-10MQ100NTRPBF

DIODE SCHOTTKY 100V 1A SMA

Vishay General Semiconductor - Diodes Division
8,428 -

RFQ

VS-10MQ100NTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 38pF @ 10V, 1MHz - 100 µA @ 100 V 100 V 1A -55°C ~ 150°C 780 mV @ 1 A
SB560-E3/54

SB560-E3/54

DIODE SCHOTTKY 60V 5A DO201AD

Vishay General Semiconductor - Diodes Division
67,887 -

RFQ

SB560-E3/54

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 5A -65°C ~ 150°C 650 mV @ 5 A
VS-70HFR100

VS-70HFR100

DIODE GEN PURP 1KV 70A DO203AB

Vishay General Semiconductor - Diodes Division
2,152 -

RFQ

VS-70HFR100

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 9 mA @ 1000 V 1000 V 70A -65°C ~ 180°C 1.35 V @ 220 A
VS-87HFL60S02

VS-87HFL60S02

DIODE GEN PURP 600V 85A DO203AB

Vishay General Semiconductor - Diodes Division
3,687 -

RFQ

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 600 V 85A -65°C ~ 180°C 1.2 V @ 267 A
VS-87HFLR60S02

VS-87HFLR60S02

DIODE GEN PURP 60V 85A DO203AB

Vishay General Semiconductor - Diodes Division
3,121 -

RFQ

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - - 60 V 85A -65°C ~ 180°C 1.2 V @ 267 A
UF5408-E3/54

UF5408-E3/54

DIODE GEN PURP 1KV 3A DO201AD

Vishay General Semiconductor - Diodes Division
16,224 -

RFQ

UF5408-E3/54

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 36pF @ 4V, 1MHz 75 ns 10 µA @ 1000 V 1000 V 3A -55°C ~ 150°C 1.7 V @ 3 A
SS8PH10-M3/86A

SS8PH10-M3/86A

DIODE SCHOTTKY 100V 8A TO277A

Vishay General Semiconductor - Diodes Division
6,117 -

RFQ

SS8PH10-M3/86A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 140pF @ 4V, 1MHz - 2 µA @ 100 V 100 V 8A -55°C ~ 175°C 900 mV @ 8 A
BYV26C-TAP

BYV26C-TAP

DIODE AVALANCHE 600V 1A SOD57

Vishay General Semiconductor - Diodes Division
26,958 -

RFQ

BYV26C-TAP

Ficha técnica

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 30 ns 5 µA @ 600 V 600 V 1A -55°C ~ 175°C 2.5 V @ 1 A
BYV26C-TR

BYV26C-TR

DIODE AVALANCHE 600V 1A SOD57

Vishay General Semiconductor - Diodes Division
10,915 -

RFQ

BYV26C-TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 30 ns 5 µA @ 600 V 600 V 1A -55°C ~ 175°C 2.5 V @ 1 A
BY448TR

BY448TR

DIODE AVALANCHE 1500V 2A SOD57

Vishay General Semiconductor - Diodes Division
14,419 -

RFQ

BY448TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole - 20 µs 3 µA @ 1500 V 1500 V 2A 140°C (Max) 1.6 V @ 3 A
SS8PH10HM3_A/H

SS8PH10HM3_A/H

DIODE SCHOTTKY 100V 8A TO277A

Vishay General Semiconductor - Diodes Division
2,308 -

RFQ

SS8PH10HM3_A/H

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 140pF @ 4V, 1MHz - 2 µA @ 100 V 100 V 8A -55°C ~ 175°C 900 mV @ 8 A
BYV26E-TR

BYV26E-TR

DIODE AVALANCHE 1000V 1A SOD57

Vishay General Semiconductor - Diodes Division
31,544 -

RFQ

BYV26E-TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 75 ns 5 µA @ 1000 V 1000 V 1A -55°C ~ 175°C 2.5 V @ 1 A
Total 11674 Record«Prev1... 135136137138139140141142...584Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario