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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-8EWH06FNHM3DIODE GEN PURP 600V 8A TO252 Vishay General Semiconductor - Diodes Division |
3,405 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 50 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 2.4 V @ 8 A |
|
V30120S-E3/4WDIODE SCHOTTKY 120V 30A TO220AB Vishay General Semiconductor - Diodes Division |
3,286 | - |
RFQ |
Ficha técnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 120 V | 120 V | 30A | -40°C ~ 150°C | 1.1 V @ 30 A |
|
DSS16-01AS-TRLDIODE SCHOTTKY 100V 16A TO263AB IXYS |
2,215 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 16A | -55°C ~ 175°C | 790 mV @ 15 A | |
|
LSM160JE3/TR13DIODE SCHOTTKY 1A 60V SMAJ Microchip Technology |
3,218 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
BYT54D-TRDIODE AVALANCHE 200V 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
3,446 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 200 V | 200 V | 1.25A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
|
HSM330JE3/TR13DIODE SCHOTTKY 3A 30V SMCJ Microchip Technology |
3,574 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
NGTD15R65F2WPDIODE GEN PURP 650V DIE onsemi |
3,532 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | Standard | Active | Surface Mount | - | - | 1 µA @ 650 V | 650 V | - | 175°C (Max) | 2.9 V @ 25 A | |
|
MBR1240MFST1GDIODE SCHOTTKY 40V 12A 5DFN onsemi |
3,425 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 12A | -55°C ~ 150°C | 680 mV @ 12 A | |
|
DSEI12-06AS-TRLPOWER DIODE DISCRETES-FRED TO-26 IXYS |
2,939 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 50 µA @ 600 V | 600 V | 14A | -40°C ~ 150°C | 1.7 V @ 16 A | ||
|
|
LSM170JE3/TR13DIODE SCHOTTKY 1A 70V SMAJ Microchip Technology |
2,098 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
BYV13-TRDIODE AVALANCHE 400V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
3,673 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 300 ns | 5 µA @ 400 V | 400 V | 1.5A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
|
HSM340GE3/TR13DIODE SCHOTTKY 3A 40V SMCG Microchip Technology |
2,072 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
VS-30ETU12THN3DIODE GEN PURP 30A TO220AC Vishay General Semiconductor - Diodes Division |
3,341 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 220 ns | 145 µA @ 1200 V | - | 30A | -55°C ~ 175°C | 2.68 V @ 30 A |
|
|
V30DL45HM3_A/IDIODE SCHOTTKY 45V 30A TO263AC Vishay General Semiconductor - Diodes Division |
2,490 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 3 mA @ 45 V | 45 V | 30A | -40°C ~ 150°C | 650 mV @ 30 A |
|
VS-20ATS12HM3RECTIFIER DIODE 20A 1200V TO-220 Vishay General Semiconductor - Diodes Division |
2,426 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A |
|
|
LSM180JE3/TR13DIODE SCHOTTKY 1A 80V SMAJ Microchip Technology |
2,661 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
BYW33-TRDIODE AVALANCHE 300V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,025 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 300 V | 300 V | 2A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
HSM340JE3/TR13DIODE SCHOTTKY 3A 40V SMCJ Microchip Technology |
2,143 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
HSM320G/TR13DIODE SCHOTTKY 3A 20V SMCG Microchip Technology |
2,638 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
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|
SRAS20150HMNGDIODE SCHOTTKY 150V 20A TO263AB Taiwan Semiconductor Corporation |
2,762 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.02 V @ 20 A |
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