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Diodos - Rectificadores - Matrices
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | DiodeConfiguration | DiodeType | Voltage-DCReverse(Vr)(Max) | Current-AverageRectified(Io)(perDiode) | Voltage-Forward(Vf)(Max)@If | Speed | ReverseRecoveryTime(trr) | Current-ReverseLeakage@Vr | OperatingTemperature-Junction | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MSC2X51SDA070JSIC SBD 700 V 50 A DUAL PARALLEL Microchip Technology |
3,749 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 Independent | Silicon Carbide Schottky | 700 V | 50A (DC) | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 700 V | -55°C ~ 175°C | Chassis Mount |
|
|
MSC2X50SDA120JSIC SBD 1200 V 50 A DUAL ANTI-PA Microchip Technology |
2,682 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 Independent | Silicon Carbide Schottky | 1200 V | 50A (DC) | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | -55°C ~ 175°C | Chassis Mount |
|
|
MSC2X51SDA120JSIC SBD 1200 V 50 A DUAL PARALLE Microchip Technology |
2,447 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 Independent | Silicon Carbide Schottky | 1200 V | 50A (DC) | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | -55°C ~ 175°C | Chassis Mount |
|
MSCDC150A120D1PAGPM-DIODE-SIC-SBD-D1P Microchip Technology |
2,532 | - |
RFQ |
Ficha técnica |
Box | - | Active | 1 Pair Series Connection | Silicon Carbide Schottky | 1200 V | 150A (DC) | 1.8 V @ 150 A | No Recovery Time > 500mA (Io) | 0 ns | - | -40°C ~ 175°C | Chassis Mount |
|
|
MSCDC200KK120D1PAGPM-DIODE-SIC-SBD-D1P Microchip Technology |
3,626 | - |
RFQ |
Ficha técnica |
Box | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 200A (DC) | 1.8 V @ 200 A | No Recovery Time > 500mA (Io) | 0 ns | - | -40°C ~ 175°C | Chassis Mount |
|
|
MSCDC200A120D1PAGPM-DIODE-SIC-SBD-D1P Microchip Technology |
3,470 | - |
RFQ |
Ficha técnica |
Box | - | Active | 1 Pair Series Connection | Silicon Carbide Schottky | 1200 V | 200A (DC) | 1.8 V @ 200 A | No Recovery Time > 500mA (Io) | 0 ns | - | -40°C ~ 175°C | Chassis Mount |
|
|
MSCDC300A70AGPM-DIODE-SIC-SBD-SP6C Microchip Technology |
2,237 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 Pair Series Connection | Silicon Carbide Schottky | 700 V | 300A (DC) | 1.8 V @ 300 A | No Recovery Time > 500mA (Io) | 0 ns | - | -40°C ~ 175°C | Chassis Mount |
|
APT30DQ60BCTGDIODE ARRAY GP 600V 30A TO247 Microchip Technology |
2,595 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 Pair Common Cathode | Standard | 600 V | 30A | 2.4 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 25 µA @ 600 V | -55°C ~ 175°C | Through Hole |
|
APT60D60LCTGDIODE ARRAY GP 600V 60A TO264 Microchip Technology |
3,729 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 Pair Common Cathode | Standard | 600 V | 60A | 1.8 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 130 ns | 250 µA @ 600 V | -55°C ~ 175°C | Through Hole |
|
APT2X31DQ120JDIODE MODULE 1.2KV 30A ISOTOP Microchip Technology |
3,317 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 Independent | Standard | 1200 V | 30A | 3.1 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 100 µA @ 1200 V | - | Chassis Mount |
|
|
APT2X100DQ60JDIODE MODULE 600V 100A ISOTOP Microchip Technology |
2,735 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 Independent | Standard | 600 V | 100A | 2.2 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 160 ns | 25 µA @ 600 V | -55°C ~ 175°C | Chassis Mount |
|
|
MSCDC100KK70D1PAGPM-DIODE-SIC-SBD-D1P Microchip Technology |
3,976 | - |
RFQ |
Ficha técnica |
Box | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 700 V | 100A (DC) | 1.8 V @ 100 A | No Recovery Time > 500mA (Io) | 0 ns | - | -40°C ~ 175°C | Chassis Mount |
|
|
MSCDC150A70D1PAGPM-DIODE-SIC-SBD-D1P Microchip Technology |
3,553 | - |
RFQ |
Ficha técnica |
Box | - | Active | 1 Pair Series Connection | Silicon Carbide Schottky | 700 V | 150A (DC) | 1.8 V @ 150 A | No Recovery Time > 500mA (Io) | 0 ns | - | -40°C ~ 175°C | Chassis Mount |
|
|
MSCDC100KK120D1PAGPM-DIODE-SIC-SBD-D1P Microchip Technology |
2,827 | - |
RFQ |
Ficha técnica |
Box | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 100A (DC) | 1.8 V @ 100 A | No Recovery Time > 500mA (Io) | 0 ns | - | -40°C ~ 175°C | Chassis Mount |
|
|
MSCDC100KK170D1PAGPM-DIODE-SIC-SBD-D1P Microchip Technology |
3,320 | - |
RFQ |
Ficha técnica |
Box | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1700 V | 100A (DC) | 1.8 V @ 100 A | No Recovery Time > 500mA (Io) | 0 ns | - | -40°C ~ 175°C | Chassis Mount |
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|
MSCDC600A70AGPM-DIODE-SIC-SBD-SP6C Microchip Technology |
2,547 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 1 Pair Series Connection | Silicon Carbide Schottky | 700 V | 600A (DC) | 1.8 V @ 600 A | No Recovery Time > 500mA (Io) | 0 ns | - | -40°C ~ 175°C | Chassis Mount |
|
|
MSC2X31SDA070JSIC SBD 700 V 30 A DUAL PARALLEL Microchip Technology |
2,148 | - |
RFQ |
Tube | - | Active | - | - | - | - | - | - | - | - | - | - | |
|
|
MSC2X30SDA120JSIC SBD 1200 V 30 A DUAL ISOTOP Microchip Technology |
3,269 | - |
RFQ |
Tube | - | Active | - | - | - | - | - | - | - | - | - | - | |
|
|
MSC2X30SDA170JSIC SBD 1700 V 30 A DUAL ISOTOP Microchip Technology |
2,179 | - |
RFQ |
Tube | - | Active | - | - | - | - | - | - | - | - | - | - | |
|
|
MSC2X51SDA170JSIC SBD 1700 V 50 A DUAL PARALLE Microchip Technology |
3,295 | - |
RFQ |
Tube | - | Active | - | - | - | - | - | - | - | - | - | - |
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