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Diodos - Rectificadores - Matrices

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	ProductStatus	DiodeConfiguration	DiodeType	Voltage-DCReverse(Vr)(Max)	Current-AverageRectified(Io)(perDiode)	Voltage-Forward(Vf)(Max)@If	Speed	ReverseRecoveryTime(trr)	Current-ReverseLeakage@Vr	OperatingTemperature-Junction	MountingType
LXS301-23-2 SI SCHOTTKY NON HERMETIC PLASTIC Microchip Technology	319	-	RFQ	Ficha técnica	Tape & Reel (TR)	-	Discontinued at Mosen	-	Schottky	20 V	-	430 mV @ 1 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	200 nA @ 15 V	-55°C ~ 125°C	Surface Mount
LXS201-23-2 SI SCHOTTKY NON HERMETIC PLASTIC Microchip Technology	170	-	RFQ	Ficha técnica	Bag	-	Active	-	Schottky	3 V	-	350 mV @ 1 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	400 nA @ 1 V	-55°C ~ 125°C	Surface Mount
APT30D60BCTG DIODE ARRAY GP 600V 30A TO247 Microchip Technology	106	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Standard	600 V	30A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	250 µA @ 600 V	-55°C ~ 175°C	Through Hole
APTDF400KK20G DIODE MODULE 200V 500A SP6 Microchip Technology	2,230	-	RFQ	Ficha técnica	Bulk	-	Active	1 Pair Common Cathode	Standard	200 V	500A	1.1 V @ 400 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	750 µA @ 200 V	-	Chassis Mount
APT100S20LCTG DIODE ARRAY SCHOTTKY 200V TO264 Microchip Technology	2,749	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Schottky	200 V	120A	950 mV @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	2 mA @ 200 V	-55°C ~ 150°C	Through Hole
MSC2X100SDA070J SIC SBD 700 V 100 A DUAL ISOTOP Microchip Technology	3,979	-	RFQ	Ficha técnica	Tube	-	Active	2 Independent	Silicon Carbide Schottky	700 V	100A (DC)	1.8 V @ 100 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 700 V	-55°C ~ 175°C	Chassis Mount
MSC2X31SDA170J SIC SBD 1700 V 30 A DUAL PARALLE Microchip Technology	3,199	-	RFQ		Tube	-	Active	-	-	-	-	-	-	-	-	-	-
MSC2X100SDA120J SIC SBD 1200 V 100 A DUAL ISOTOP Microchip Technology	3,137	-	RFQ	Ficha técnica	Tube	-	Active	2 Independent	Silicon Carbide Schottky	1200 V	100A (DC)	1.8 V @ 100 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 1200 V	-55°C ~ 175°C	Chassis Mount
MSCDC200KK70D1PAG PM-DIODE-SIC-SBD-D1P Microchip Technology	3,048	-	RFQ	Ficha técnica	Box	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	700 V	200A (DC)	1.8 V @ 200 A	No Recovery Time > 500mA (Io)	0 ns	-	-40°C ~ 175°C	Chassis Mount
MSCDC150KK120D1PAG PM-DIODE-SIC-SBD-D1P Microchip Technology	2,023	-	RFQ	Ficha técnica	Box	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	150A (DC)	1.8 V @ 150 A	No Recovery Time > 500mA (Io)	0 ns	-	-40°C ~ 175°C	Chassis Mount
APT30D30BCTG DIODE ARRAY GP 300V 30A TO247 Microchip Technology	2,191	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Standard	300 V	30A	1.4 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	250 µA @ 300 V	-55°C ~ 150°C	Through Hole
APT30DQ60BHBG DIODE ARRAY GP 600V 30A TO247 Microchip Technology	2,673	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Series Connection	Standard	600 V	30A	2.4 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-55°C ~ 175°C	Through Hole
APT30D20BCAG DIODE ARRAY GP 200V 30A TO247 Microchip Technology	3,702	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Anode	Standard	200 V	30A	1.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	24 ns	250 µA @ 200 V	-55°C ~ 175°C	Through Hole
APT2X31D60J DIODE MODULE 600V 30A ISOTOP Microchip Technology	3,031	-	RFQ	Ficha técnica	Tube	-	Active	2 Independent	Standard	600 V	30A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	250 µA @ 600 V	-	Chassis Mount
APT2X31DQ60J DIODE MODULE 600V 30A ISOTOP Microchip Technology	2,945	-	RFQ	Ficha técnica	Tube	-	Active	2 Independent	Standard	600 V	30A	2.2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	105 ns	25 µA @ 600 V	-	Chassis Mount
APT2X60DQ120J DIODE MODULE 1.2KV 60A ISOTOP Microchip Technology	3,742	-	RFQ	Ficha técnica	Tube	-	Active	2 Independent	Standard	1200 V	60A	3.1 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	265 ns	100 µA @ 1200 V	-	Chassis Mount
APT2X30S20J SCHOTTKY RECTIFIER 200V 300A ISO Microchip Technology	3,595	-	RFQ		Tube	-	Active	2 Independent	Schottky	200 V	45A	850 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	500 µA @ 200 V	-55°C ~ 150°C	Chassis Mount
APT2X31D100J DIODE MODULE 1KV 28A ISOTOP Microchip Technology	3,827	-	RFQ	Ficha técnica	Tube	-	Active	2 Independent	Standard	1000 V	28A	2.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	290 ns	250 µA @ 1000 V	-	Chassis Mount
APT2X31D120J DIODE MODULE 1.2KV 30A ISOTOP Microchip Technology	2,186	-	RFQ	Ficha técnica	Tube	-	Active	2 Independent	Standard	1200 V	30A	2.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	370 ns	250 µA @ 1200 V	-	Chassis Mount
MSC2X50SDA070J SIC SBD 700 V 50 A DUAL ANTI-PAR Microchip Technology	3,828	-	RFQ	Ficha técnica	Tube	-	Active	2 Independent	Silicon Carbide Schottky	700 V	50A (DC)	1.8 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 700 V	-55°C ~ 175°C	Chassis Mount