Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBPC2501M T0G

GBPC2501M T0G

BRIDGE RECT 1P 100V 25A GBPC-M

Taiwan Semiconductor Corporation
3,993 -

RFQ

GBPC2501M T0G

Ficha técnica

Tray - Active Single Phase Standard 100 V 25 A 1.1 V @ 12.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-M
GBPC2501W T0G

GBPC2501W T0G

BRIDGE RECT 1P 100V 25A GBPC-W

Taiwan Semiconductor Corporation
3,337 -

RFQ

GBPC2501W T0G

Ficha técnica

Tray - Active Single Phase Standard 100 V 25 A 1.1 V @ 12.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC2502 T0G

GBPC2502 T0G

BRIDGE RECT 1PHASE 200V 25A GBPC

Taiwan Semiconductor Corporation
2,707 -

RFQ

GBPC2502 T0G

Ficha técnica

Tray - Active Single Phase Standard 200 V 25 A 1.1 V @ 12.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC2502M T0G

GBPC2502M T0G

BRIDGE RECT 1P 200V 25A GBPC-M

Taiwan Semiconductor Corporation
3,522 -

RFQ

GBPC2502M T0G

Ficha técnica

Tray - Active Single Phase Standard 200 V 25 A 1.1 V @ 12.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-M
GBPC2502W T0G

GBPC2502W T0G

BRIDGE RECT 1P 200V 25A GBPC-W

Taiwan Semiconductor Corporation
3,488 -

RFQ

GBPC2502W T0G

Ficha técnica

Tray - Active Single Phase Standard 200 V 25 A 1.1 V @ 12.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC2504 T0G

GBPC2504 T0G

BRIDGE RECT 1PHASE 400V 25A GBPC

Taiwan Semiconductor Corporation
2,874 -

RFQ

GBPC2504 T0G

Ficha técnica

Tray - Active Single Phase Standard 400 V 25 A 1.1 V @ 12.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC2504M T0G

GBPC2504M T0G

BRIDGE RECT 1P 400V 25A GBPC-M

Taiwan Semiconductor Corporation
3,905 -

RFQ

GBPC2504M T0G

Ficha técnica

Tray - Active Single Phase Standard 400 V 25 A 1.1 V @ 12.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-M
GBPC2504W T0G

GBPC2504W T0G

BRIDGE RECT 1P 400V 25A GBPC-W

Taiwan Semiconductor Corporation
2,903 -

RFQ

GBPC2504W T0G

Ficha técnica

Tray - Active Single Phase Standard 400 V 25 A 1.1 V @ 12.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC2506 T0G

GBPC2506 T0G

BRIDGE RECT 1PHASE 600V 25A GBPC

Taiwan Semiconductor Corporation
2,801 -

RFQ

GBPC2506 T0G

Ficha técnica

Tray - Active Single Phase Standard 600 V 25 A 1.1 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC2506M T0G

GBPC2506M T0G

BRIDGE RECT 1P 600V 25A GBPC-M

Taiwan Semiconductor Corporation
3,296 -

RFQ

GBPC2506M T0G

Ficha técnica

Tray - Active Single Phase Standard 600 V 25 A 1.1 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-M
GBPC2506W T0G

GBPC2506W T0G

BRIDGE RECT 1P 600V 25A GBPC-W

Taiwan Semiconductor Corporation
2,078 -

RFQ

GBPC2506W T0G

Ficha técnica

Tray - Active Single Phase Standard 600 V 25 A 1.1 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC2508 T0G

GBPC2508 T0G

BRIDGE RECT 1PHASE 800V 25A GBPC

Taiwan Semiconductor Corporation
2,500 -

RFQ

GBPC2508 T0G

Ficha técnica

Tray - Active Single Phase Standard 800 V 25 A 1.1 V @ 12.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC2508M T0G

GBPC2508M T0G

BRIDGE RECT 1P 800V 25A GBPC-M

Taiwan Semiconductor Corporation
2,265 -

RFQ

GBPC2508M T0G

Ficha técnica

Tray - Active Single Phase Standard 800 V 25 A 1.1 V @ 12.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-M
GBPC2508W T0G

GBPC2508W T0G

BRIDGE RECT 1P 800V 25A GBPC-W

Taiwan Semiconductor Corporation
3,826 -

RFQ

GBPC2508W T0G

Ficha técnica

Tray - Active Single Phase Standard 800 V 25 A 1.1 V @ 12.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC2510 T0G

GBPC2510 T0G

BRIDGE RECT 1PHASE 1KV 25A GBPC

Taiwan Semiconductor Corporation
2,337 -

RFQ

GBPC2510 T0G

Ficha técnica

Tray - Active Single Phase Standard 1 kV 25 A 1.1 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC2510M T0G

GBPC2510M T0G

BRIDGE RECT 1P 1KV 25A GBPC-M

Taiwan Semiconductor Corporation
2,205 -

RFQ

GBPC2510M T0G

Ficha técnica

Tray - Active Single Phase Standard 1 kV 25 A 1.1 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-M
GBPC2510W T0G

GBPC2510W T0G

BRIDGE RECT 1P 1KV 25A GBPC-W

Taiwan Semiconductor Corporation
2,016 -

RFQ

GBPC2510W T0G

Ficha técnica

Tray - Active Single Phase Standard 1 kV 25 A 1.1 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC35005 T0G

GBPC35005 T0G

BRIDGE RECT 1PHASE 50V 35A GBPC

Taiwan Semiconductor Corporation
3,465 -

RFQ

GBPC35005 T0G

Ficha técnica

Tray - Active Single Phase Standard 50 V 35 A 1.1 V @ 17.5 A 5 µA @ 50 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC35005M T0G

GBPC35005M T0G

BRIDGE RECT 1P 50V 35A GBPC-M

Taiwan Semiconductor Corporation
3,278 -

RFQ

GBPC35005M T0G

Ficha técnica

Tray - Active Single Phase Standard 50 V 35 A 1.1 V @ 17.5 A 5 µA @ 50 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-M
GBPC35005W T0G

GBPC35005W T0G

BRIDGE RECT 1P 50V 35A GBPC-W

Taiwan Semiconductor Corporation
3,992 -

RFQ

GBPC35005W T0G

Ficha técnica

Tray - Active Single Phase Standard 50 V 35 A 1.1 V @ 17.5 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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