Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBU8B-E3/51

GBU8B-E3/51

BRIDGE RECT 1PHASE 100V 3.9A GBU

Vishay General Semiconductor - Diodes Division
2,400 -

RFQ

GBU8B-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 100 V 3.9 A 1 V @ 8 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
VS-26MB20A

VS-26MB20A

BRIDGE RECT 1PHASE 200V 25A D-34

Vishay General Semiconductor - Diodes Division
2,273 -

RFQ

VS-26MB20A

Ficha técnica

Bulk - Active Single Phase Standard 200 V 25 A - 10 µA @ 200 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, D-34
VS-KBPC602

VS-KBPC602

BRIDGE RECT 1PHASE 200V 6A D-72

Vishay General Semiconductor - Diodes Division
3,300 -

RFQ

VS-KBPC602

Ficha técnica

Bulk VS-KBPC6 Active Single Phase Standard 200 V 6 A 1.2 V @ 3 A 10 µA @ 200 V -40°C ~ 150°C (TJ) Through Hole 4-Square, D-72
VS-36MT40

VS-36MT40

BRIDGE RECT 3PHASE 400V 35A D-63

Vishay General Semiconductor - Diodes Division
3,853 -

RFQ

VS-36MT40

Ficha técnica

Bulk - Active Three Phase Standard 400 V 35 A - 10 µA @ 400 V -55°C ~ 150°C (TJ) QC Terminal 5-Square, D-63
GBPC2508W-E4/51

GBPC2508W-E4/51

BRIDGE RECT 1P 800V 25A GBPC-W

Vishay General Semiconductor - Diodes Division
2,613 -

RFQ

GBPC2508W-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 800 V 25 A 1.1 V @ 12.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
VS-26MT140

VS-26MT140

BRIDGE RECT 3P 1.4KV 25A D-63

Vishay General Semiconductor - Diodes Division
2,374 -

RFQ

VS-26MT140

Ficha técnica

Bulk - Active Three Phase Standard 1.4 kV 25 A - 100 µA @ 1400 V -55°C ~ 150°C (TJ) QC Terminal 5-Square, D-63
VS-100MT160PAPBF

VS-100MT160PAPBF

BRIDGE RECT 3P 1.6KV 100A 7MTPB

Vishay General Semiconductor - Diodes Division
2,007 -

RFQ

VS-100MT160PAPBF

Ficha técnica

Bulk - Active Three Phase Standard 1.6 kV 100 A 1.51 V @ 100 A - -40°C ~ 150°C (TJ) Chassis Mount 7-MTPB
VS-60MT120KPBF

VS-60MT120KPBF

BRIDGE RECT 3P 1.6KV 60A MT-K

Vishay General Semiconductor - Diodes Division
2,134 -

RFQ

VS-60MT120KPBF

Ficha técnica

Bulk - Active Three Phase Standard 1.6 kV 60 A - - -40°C ~ 150°C (TJ) Chassis Mount MT-K Module
VS-110MT120KPBF

VS-110MT120KPBF

BRIDGE RECT 3P 1.2KV 110A MT-K

Vishay General Semiconductor - Diodes Division
2,869 -

RFQ

VS-110MT120KPBF

Ficha técnica

Tray - Active Three Phase Standard 1.2 kV 110 A - - -40°C ~ 150°C (TJ) Chassis Mount MT-K Module
GBU4G-E3/45

GBU4G-E3/45

BRIDGE RECT 1PHASE 400V 3A GBU

Vishay General Semiconductor - Diodes Division
873 -

RFQ

GBU4G-E3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 3 A 1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4D-E3/51

GBU4D-E3/51

BRIDGE RECT 1PHASE 200V 3A GBU

Vishay General Semiconductor - Diodes Division
652 -

RFQ

GBU4D-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 200 V 3 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
VS-2KBB10R

VS-2KBB10R

BRIDGE RECT 1P 100V 1.9A 2KBB

Vishay General Semiconductor - Diodes Division
485 -

RFQ

VS-2KBB10R

Ficha técnica

Bulk - Active Single Phase Standard 100 V 1.9 A - - -40°C ~ 150°C (TJ) Through Hole 4-SIP, 2KBB
GBU8B-E3/45

GBU8B-E3/45

BRIDGE RECT 1PHASE 100V 3.9A GBU

Vishay General Semiconductor - Diodes Division
120 -

RFQ

GBU8B-E3/45

Ficha técnica

Tube - Active Single Phase Standard 100 V 3.9 A 1 V @ 8 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8M-E3/51

GBU8M-E3/51

BRIDGE RECT 1PHASE 1KV 3.9A GBU

Vishay General Semiconductor - Diodes Division
682 -

RFQ

GBU8M-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 3.9 A 1 V @ 8 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1006-E3/45

BU1006-E3/45

BRIDGE RECT 1P 600V 3.2A BU

Vishay General Semiconductor - Diodes Division
742 -

RFQ

BU1006-E3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 3.2 A 1.05 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1210-E3/45

BU1210-E3/45

BRIDGE RECT 1P 1KV 3.4A BU

Vishay General Semiconductor - Diodes Division
248 -

RFQ

BU1210-E3/45

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 3.4 A 1.05 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GBU6D-E3/51

GBU6D-E3/51

BRIDGE RECT 1PHASE 200V 3.8A GBU

Vishay General Semiconductor - Diodes Division
891 -

RFQ

GBU6D-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 200 V 3.8 A 1 V @ 3 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6G-E3/45

GBU6G-E3/45

BRIDGE RECT 1PHASE 400V 3.8A GBU

Vishay General Semiconductor - Diodes Division
3,530 -

RFQ

GBU6G-E3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 3.8 A 1 V @ 6 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1208-E3/45

BU1208-E3/45

BRIDGE RECT 1P 800V 3.4A BU

Vishay General Semiconductor - Diodes Division
223 -

RFQ

BU1208-E3/45

Ficha técnica

Bulk - Active Single Phase Standard 800 V 3.4 A 1.05 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GSIB1540-E3/45

GSIB1540-E3/45

BRIDGE RECT 1P 400V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
637 -

RFQ

GSIB1540-E3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 3.5 A 950 mV @ 7.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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