Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
BU2010-M3/45

BU2010-M3/45

BRIDGE RECT 1P 1KV 20A BU

Vishay General Semiconductor - Diodes Division
483 -

RFQ

BU2010-M3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 20 A 1.05 V @ 10 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GSIB1580N-M3/45

GSIB1580N-M3/45

BRIDGE RECT 1P 800V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division
821 -

RFQ

GSIB1580N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 15 A 950 mV @ 7.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GBPC1210-E4/51

GBPC1210-E4/51

BRIDGE RECT 1PHASE 1KV 12A GBPC

Vishay General Semiconductor - Diodes Division
100 -

RFQ

GBPC1210-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 12 A 1.1 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GSIB680-E3/45

GSIB680-E3/45

BRIDGE RECT 1P 800V 2.8A GSIB-5S

Vishay General Semiconductor - Diodes Division
131 -

RFQ

GSIB680-E3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 2.8 A 950 mV @ 3 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
BU2008-E3/45

BU2008-E3/45

BRIDGE RECT 1P 800V 3.5A BU

Vishay General Semiconductor - Diodes Division
214 -

RFQ

BU2008-E3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 3.5 A 1.05 V @ 10 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GBPC3506W-E4/51

GBPC3506W-E4/51

BRIDGE RECT 1P 600V 35A GBPC-W

Vishay General Semiconductor - Diodes Division
3,391 -

RFQ

GBPC3506W-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 600 V 35 A 1.1 V @ 17.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
VS-131MT160C

VS-131MT160C

MTC - THREE PHASE BRIDGE

Vishay General Semiconductor - Diodes Division
3,940 -

RFQ

VS-131MT160C

Ficha técnica

Box - Active Three Phase Standard 1.6 kV 218 A 2.05 V @ 300 A 12 mA @ 1600 V -40°C ~ 150°C (TJ) Chassis Mount Module
VS-131MT180C

VS-131MT180C

MTC - THREE PHASE BRIDGE

Vishay General Semiconductor - Diodes Division
2,071 -

RFQ

VS-131MT180C

Ficha técnica

Box - Active Three Phase Standard 1.8 kV 218 A 2.05 V @ 300 A 12 mA @ 1800 V -40°C ~ 150°C (TJ) Chassis Mount Module
VS-161MT160C

VS-161MT160C

MTC - THREE PHASE BRIDGE

Vishay General Semiconductor - Diodes Division
3,448 -

RFQ

VS-161MT160C

Ficha técnica

Box - Active Three Phase Standard 1.6 kV 257 A 1.85 V @ 300 A 12 mA @ 1600 V -40°C ~ 150°C (TJ) Chassis Mount Module
VS-301MT180C

VS-301MT180C

MTC - THREE PHASE BRIDGE

Vishay General Semiconductor - Diodes Division
2,432 -

RFQ

VS-301MT180C

Ficha técnica

Box - Active Three Phase Standard 1.8 kV 300 A 1.7 V @ 300 A 12 mA @ 1800 V -40°C ~ 150°C (TJ) Chassis Mount Module
DFL1506S-E3/77

DFL1506S-E3/77

BRIDGE RECT 1PHASE 600V 1.5A DFS

Vishay General Semiconductor - Diodes Division
609 -

RFQ

DFL1506S-E3/77

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Single Phase Standard 600 V 1.5 A 1.1 V @ 1.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
EDF1BS-E3/77

EDF1BS-E3/77

BRIDGE RECT 1PHASE 100V 1A DFS

Vishay General Semiconductor - Diodes Division
776 -

RFQ

EDF1BS-E3/77

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Single Phase Standard 100 V 1 A 1.05 V @ 1 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
BU10105S-E3/45

BU10105S-E3/45

BRIDGE RECT 1P 1KV 3.2A BU-5S

Vishay General Semiconductor - Diodes Division
247 -

RFQ

BU10105S-E3/45

Ficha técnica

Bulk - Obsolete Single Phase Standard 1 kV 3.2 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU-5S
W10G-E4/51

W10G-E4/51

BRIDGE RECT 1PHASE 1KV 1.5A WOG

Vishay General Semiconductor - Diodes Division
3,097 -

RFQ

W10G-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 1.5 A 1 V @ 1 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Circular, WOG
VS-36MB160A

VS-36MB160A

BRIDGE RECT 1P 1.6KV 35A D-34

Vishay General Semiconductor - Diodes Division
141 -

RFQ

VS-36MB160A

Ficha técnica

Bulk - Active Single Phase Standard 1.6 kV 35 A - 10 µA @ 1600 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, D-34
DF08SA-E3/77

DF08SA-E3/77

BRIDGE RECT 1PHASE 800V 1A DFS

Vishay General Semiconductor - Diodes Division
3,941 -

RFQ

DF08SA-E3/77

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Single Phase Standard 800 V 1 A 1.1 V @ 1 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
DF01S-E3/77

DF01S-E3/77

BRIDGE RECT 1PHASE 100V 1A DFS

Vishay General Semiconductor - Diodes Division
2,493 -

RFQ

DF01S-E3/77

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Single Phase Standard 100 V 1 A 1.1 V @ 1 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
DF06S-E3/77

DF06S-E3/77

BRIDGE RECT 1PHASE 600V 1A DFS

Vishay General Semiconductor - Diodes Division
2,354 -

RFQ

DF06S-E3/77

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Single Phase Standard 600 V 1 A 1.1 V @ 1 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
B250C1000G-E4/51

B250C1000G-E4/51

BRIDGE RECT 1PHASE 400V 1A WOG

Vishay General Semiconductor - Diodes Division
3,260 -

RFQ

B250C1000G-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 400 V 1 A 1 V @ 1 A 10 µA @ 400 V -40°C ~ 125°C (TJ) Through Hole 4-Circular, WOG
B250C800G-E4/51

B250C800G-E4/51

BRIDGE RECT 1P 400V 900MA WOG

Vishay General Semiconductor - Diodes Division
2,107 -

RFQ

B250C800G-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 400 V 900 mA 1 V @ 900 mA 10 µA @ 400 V -40°C ~ 125°C (TJ) Through Hole 4-Circular, WOG
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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