Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTE491

NTE491

MOSFET N-CHANNEL 60V 200MA TO92

NTE Electronics, Inc
944 -

RFQ

NTE491

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V 3V @ 1mA - ±20V 50 pF @ 25 V - 350mW (Ta) -55°C ~ 150°C (TJ) Through Hole
2N7002

2N7002

MOSFET N-CHANNEL 60V 115MA SOT23

NTE Electronics, Inc
652 -

RFQ

2N7002

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 115mA (Ta) 5V, 10V 7.5Ohm @ 500mA, 10V 2.5V @ 250µA - ±20V 50 pF @ 25 V - 200mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
NTE490

NTE490

MOSFET N-CHANNEL 60V 500MA AXIAL

NTE Electronics, Inc
712 -

RFQ

NTE490

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 500mA (Tj) 10V 5Ohm @ 200mA, 10V 3V @ 1mA - ±20V 60 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) Through Hole
BS170

BS170

MOSFET N-CH 60V 300MA TO92-3

NTE Electronics, Inc
639 -

RFQ

BS170

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) - 5Ohm @ 200mA, 10V 3V @ 1mA - - 60 pF @ 10 V - - - Through Hole
NTE2379

NTE2379

MOSFET N-CHANNEL 600V 6.2A TO220

NTE Electronics, Inc
3,677 -

RFQ

NTE2379

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE67

NTE67

MOSFET N-CHANNEL 400V 4.5A TO220

NTE Electronics, Inc
3,334 -

RFQ

NTE67

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 400 V 4.5A (Tc) 10V 1.5Ohm @ 3A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 780 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2381

NTE2381

MOSFET P-CHANNEL 500V 2.7A TO220

NTE Electronics, Inc
3,975 -

RFQ

NTE2381

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 500 V 2.7A (Tc) 10V 4.9Ohm @ 1.35A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 660 pF @ 25 V - 85W (Tc) -65°C ~ 150°C Through Hole
NTE2387

NTE2387

MOSFET N-CHANNEL 800V 4.1A TO220

NTE Electronics, Inc
2,873 -

RFQ

NTE2387

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE454

NTE454

MOSFET-DUAL GATE N-CH

NTE Electronics, Inc
3,380 -

RFQ

NTE454

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 20 V 60mA - - - - - 3300 pF @ 15 V Standard 1.2W -65°C ~ 175°C (TJ) Through Hole
NTE464

NTE464

MOSFET-P CHANNEL AMP/SW

NTE Electronics, Inc
3,957 -

RFQ

NTE464

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 25 V 10A 10V 600Ohm @ 0A, 10V 5V @ 10A - ±30V 5000 pF @ 10 V Standard 800mW (Tc) 175°C (TJ) Through Hole
NTE2384

NTE2384

MOSFET N-CHANNEL 900V 6A TO3

NTE Electronics, Inc
2,482 -

RFQ

NTE2384

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 900 V 6A (Tc) 10V 1.4Ohm @ 3A, 10V 4.5V @ 250µA 130 nC @ 10 V ±20V 2600 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF350

IRF350

MOSFET N-CH 400V 14A TO3

NTE Electronics, Inc
2,705 -

RFQ

IRF350

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 400 V 14A (Tc) 10V 400mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2600 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2390

NTE2390

MOSFET N-CHANNEL 60V 12A TO220

NTE Electronics, Inc
3,418 -

RFQ

NTE2390

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 10V 200mOhm @ 6A, 10V 4.5V @ 1mA 26 nC @ 10 V ±20V 400 pF @ 25 V - 75W (Tc) -65°C ~ 150°C (TJ) Through Hole
NTE2372

NTE2372

MOSFET P-CHANNEL 200V 3.5A TO220

NTE Electronics, Inc
2,006 -

RFQ

NTE2372

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2382

NTE2382

MOSFET N-CHANNEL 100V 9.2A TO220

NTE Electronics, Inc
3,051 -

RFQ

NTE2382

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 10V 270mOhm @ 4.6A, 10V 4V @ 250µA 23 nC @ 10 V ±20V 400 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2394

NTE2394

MOSFET N-CHANNEL 500V 14A TO3P

NTE Electronics, Inc
3,964 -

RFQ

NTE2394

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 400mOhm @ 7.9A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3000 pF @ 25 V - 180W (Tc) 150°C (TJ) Through Hole
NTE222

NTE222

MOSFET N-CHANNEL 25V 50MA TO72

NTE Electronics, Inc
3,729 -

RFQ

NTE222

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 25 V 50mA (Tj) - - 4V @ 20µA - - 3300 pF @ 15 V - 360mW (Ta), 1.2mW (Tc) -65°C ~ 175°C (TJ) Through Hole
NTE491SM

NTE491SM

MOSFET N-CHANNEL 60V 115MA SOT23

NTE Electronics, Inc
1,252 -

RFQ

NTE491SM

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 115mA (Ta) 4.5V, 10V 7.5Ohm @ 500mA, 10V 2.5V @ 250µA - ±20V 50 pF @ 25 V - 200mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7000

2N7000

MOSFET N-CHANNEL 60V 200MA TO92

NTE Electronics, Inc
4,805 -

RFQ

2N7000

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) - 5Ohm @ 500mA, 10V 3V @ 1mA - - 60 pF @ 25 V - - - Through Hole
NTE2396A

NTE2396A

MOSFET N-CHANNEL 100V 33A TO220

NTE Electronics, Inc
1,340 -

RFQ

NTE2396A

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 44mOhm @ 16A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 1960 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 57 Record«Prev123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario