Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTE2931

NTE2931

MOSFET N-CH 200V 12.8A TO3PML

NTE Electronics, Inc
212 -

RFQ

NTE2931

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 200 V 12.8A (Tc) 10V 180mOhm @ 6.4A, 40V 4V @ 250µA 58 nC @ 10 V ±30V 1500 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2932

NTE2932

MOSFET N-CH 200V 21.3A TO3PML

NTE Electronics, Inc
488 -

RFQ

NTE2932

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 200 V 21.3A (Tc) 10V 85mOhm @ 10.65A, 10V 4V @ 250µA 123 nC @ 10 V ±20V 3000 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2371

NTE2371

MOSFET P-CHANNEL 100V 19A TO220

NTE Electronics, Inc
196 -

RFQ

NTE2371

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 10V 200mOhm @ 11A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTE2399

NTE2399

MOSFET N-CHANNEL 1KV 3.1A TO220

NTE Electronics, Inc
332 -

RFQ

NTE2399

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 1000 V 3.1A (Tc) 10V 5Ohm @ 1.9A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 980 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2930

NTE2930

MOSFET N-CHANNEL 100V 31A TO3PML

NTE Electronics, Inc
364 -

RFQ

NTE2930

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 100 V 31A (Tc) 10V 40mOhm @ 15.5A, 10V 4V @ 250µA 97 nC @ 10 V ±20V 2270 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTE2383

NTE2383

MOSFET P-CH 100V 10.5A TO220

NTE Electronics, Inc
104 -

RFQ

NTE2383

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 100 V 10.5A (Tc) 10V 300mOhm @ 5.3A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 835 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2375

NTE2375

MOSFET N-CHANNEL 100V 41A TO247

NTE Electronics, Inc
216 -

RFQ

NTE2375

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 100 V 41A (Tc) 10V 55mOhm @ 25A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 2800 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTE2922

NTE2922

MOSFET N-CHANNEL 400V 16A TO3P

NTE Electronics, Inc
737 -

RFQ

NTE2922

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 400 V 16A (Tc) 10V 300mOhm @ 8.9A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 2600 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2376

NTE2376

MOSFET N-CHANNEL 200V 30A TO247

NTE Electronics, Inc
1,844 -

RFQ

NTE2376

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 200 V 30A (Tc) 10V 85mOhm @ 18A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 2800 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2920

NTE2920

MOSFET N-CHANNEL 60V 70A TO3P

NTE Electronics, Inc
363 -

RFQ

NTE2920

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 70A (Tc) 10V 14mOhm @ 54A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 4500 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTE2393

NTE2393

MOSFET N-CHANNEL 500V 10A TO3P

NTE Electronics, Inc
108 -

RFQ

NTE2393

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 670mOhm @ 5A, 10V 4V @ 1mA - ±20V - - 125W (Tc) 150°C (TJ) Through Hole
NTE2392

NTE2392

MOSFET N-CHANNEL 100V 40A TO3

NTE Electronics, Inc
936 -

RFQ

NTE2392

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 55mOhm @ 20A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2386

NTE2386

MOSFET N-CHANNEL 600V 6.2A TO3

NTE Electronics, Inc
180 -

RFQ

NTE2386

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.4A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF730

IRF730

MOSFET N-CH 400V 5.5A TO220

NTE Electronics, Inc
806 -

RFQ

IRF730

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 700 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2984

NTE2984

MOSFET-PWR N-CHAN 60V 17A TO-220

NTE Electronics, Inc
380 -

RFQ

NTE2984

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 5V 140mOhm @ 8.5A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 60W -55°C ~ 175°C (TJ) Through Hole
NTE2991

NTE2991

MOSFET PWR N-CH 55V 110A TO-220

NTE Electronics, Inc
140 -

RFQ

NTE2991

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8Ohm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V 3247 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTE2973

NTE2973

MOSFET-N-CHAN ENHANCEMENT TO-3P

NTE Electronics, Inc
216 -

RFQ

NTE2973

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 900 V 14A (Tc) 10V 850mOhm @ 7A, 10V 4V @ 1mA - ±30V 2900 pF @ 25 V - 275W (Tc) -55°C ~ 150°C Through Hole
Total 57 Record«Prev123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario