Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
EPC8002

EPC8002

GANFET N-CH 65V 2A DIE

EPC
2,065 -

RFQ

EPC8002

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 65 V 2A (Ta) 5V 530mOhm @ 500mA, 5V 2.5V @ 250µA - +6V, -4V 21 pF @ 32.5 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2059

EPC2059

TRANS GAN 170V DIE .009OHM

EPC
3,434 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active - - - - - - - - - - - - - -
EPC2066

EPC2066

TRANSISTOR GAN 40V .001OHM

EPC
13,137 -

RFQ

EPC2066

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 40 V 90A (Ta) 5V 1.1mOhm @ 50A, 5V 2.5V @ 28mA 33 nC @ 5 V +6V, -4V 4523 pF @ 20 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2302

EPC2302

TRANS GAN 100V DIE .0019OHM

EPC
2,571 -

RFQ

EPC2302

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 100 V 101A (Ta) 5V 1.8mOhm @ 50A, 5V 2.5V @ 14mA 23 nC @ 5 V +6V, -4V 3200 pF @ 50 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2044

EPC2044

TRANSISTOR GAN 40V .0105OHM

EPC
2,922 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
EPC2204A

EPC2204A

TRANS GAN 100V .006OHM AECQ101

EPC
2,372 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active - - - - - - - - - - - - - -
EPC2088

EPC2088

TRANS GAN 100V .0032OHM BMP DIE

EPC
2,738 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active - - - - - - - - - - - - - -
EPC2218A

EPC2218A

TRANS GAN 100V .0032OHM AECQ101

EPC
3,446 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active - - - - - - - - - - - - - -
EPC2305ENGRT

EPC2305ENGRT

TRANS GAN 150V .003OHM 3X5MM QFN

EPC
2,215 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
EPC2036

EPC2036

GANFET N-CH 100V 1.7A DIE

EPC
292,689 -

RFQ

EPC2036

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 100 V 1.7A (Ta) 5V 65mOhm @ 1A, 5V 2.5V @ 600µA 0.91 nC @ 5 V +6V, -4V 90 pF @ 50 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2040

EPC2040

GANFET NCH 15V 3.4A DIE

EPC
65,528 -

RFQ

EPC2040

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 15 V 3.4A (Ta) 5V 30mOhm @ 1.5A, 5V 2.5V @ 1mA 0.93 nC @ 5 V - 105 pF @ 6 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2037

EPC2037

GANFET N-CH 100V 1.7A DIE

EPC
573,306 -

RFQ

EPC2037

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 100 V 1.7A (Ta) 5V 550mOhm @ 100mA, 5V 2.5V @ 80µA 0.12 nC @ 5 V +6V, -4V 14 pF @ 50 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2038

EPC2038

GANFET N-CH 100V 500MA DIE

EPC
278,060 -

RFQ

EPC2038

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 100 V 500mA (Ta) 5V 3.3Ohm @ 50mA, 5V 2.5V @ 20µA 0.044 nC @ 5 V +6V, -4V 8.4 pF @ 50 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2039

EPC2039

GANFET N-CH 80V 6.8A DIE

EPC
52,910 -

RFQ

EPC2039

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 80 V 6.8A (Ta) 5V 25mOhm @ 6A, 5V 2.5V @ 2mA 2.4 nC @ 5 V +6V, -4V 210 pF @ 40 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2052

EPC2052

GANFET N-CH 100V 8.2A DIE

EPC
145,963 -

RFQ

EPC2052

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel GaNFET (Gallium Nitride) 100 V 8.2A (Ta) 5V 13.5mOhm @ 11A, 5V 2.5V @ 3mA 4.5 nC @ 5 V +6V, -4V 575 pF @ 50 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2054

EPC2054

TRANS GAN 200V DIE 60MOHM

EPC
4,369 -

RFQ

EPC2054

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 200 V 3A (Ta) 5V 43mOhm @ 1A, 5V 2.5V @ 1mA 4.3 nC @ 5 V +6V, -4V 573 pF @ 100 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2007C

EPC2007C

GANFET N-CH 100V 6A DIE OUTLINE

EPC
43,284 -

RFQ

EPC2007C

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 100 V 6A (Ta) 5V 30mOhm @ 6A, 5V 2.5V @ 1.2mA 2.2 nC @ 5 V +6V, -4V 220 pF @ 50 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC8010

EPC8010

GANFET N-CH 100V 4A DIE

EPC
26,864 -

RFQ

EPC8010

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 100 V 4A (Ta) 5V 160mOhm @ 500mA, 5V 2.5V @ 250µA 0.48 nC @ 5 V +6V, -4V 55 pF @ 50 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2045

EPC2045

GANFET N-CH 100V 16A DIE

EPC
33,456 -

RFQ

EPC2045

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 100 V 16A (Ta) 5V 7mOhm @ 16A, 5V 2.5V @ 5mA 6.5 nC @ 5 V +6V, -4V 685 pF @ 50 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2204

EPC2204

TRANS GAN 100V DIE 5.6MOHM

EPC
20,842 -

RFQ

EPC2204

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 100 V 29A (Ta) 5V 6mOhm @ 16A, 5V 2.5V @ 4mA 7.4 nC @ 5 V +6V, -4V 851 pF @ 50 V - - -40°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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