Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
EPC2034

EPC2034

GANFET N-CH 200V 48A DIE

EPC
1,654 -

RFQ

EPC2034

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Not For New Designs N-Channel GaNFET (Gallium Nitride) 200 V 48A (Ta) 5V 10mOhm @ 20A, 5V 2.5V @ 7mA 8.8 nC @ 5 V +6V, -4V 950 pF @ 100 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2071

EPC2071

TRANS GAN 100V .0022OHM 21BMPD

EPC
4,832 -

RFQ

EPC2071

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 100 V 64A (Ta) 5V 2.2mOhm @ 30A, 5V 2.5V @ 13mA 26 nC @ 5 V +6V, -4V 3931 pF @ 50 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2001

EPC2001

GANFET N-CH 100V 25A DIE OUTLINE

EPC
3,667 -

RFQ

EPC2001

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Discontinued at Mosen N-Channel GaNFET (Gallium Nitride) 100 V 25A (Ta) 5V 7mOhm @ 25A, 5V 2.5V @ 5mA 10 nC @ 5 V +6V, -5V 950 pF @ 50 V - - -40°C ~ 125°C (TJ) Surface Mount
EPC2007

EPC2007

GANFET N-CH 100V 6A DIE OUTLINE

EPC
3,924 -

RFQ

EPC2007

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Obsolete N-Channel GaNFET (Gallium Nitride) 100 V 6A (Ta) 5V 30mOhm @ 6A, 5V 2.5V @ 1.2mA 2.8 nC @ 5 V +6V, -5V 205 pF @ 50 V - - -40°C ~ 125°C (TJ) Surface Mount
EPC2010

EPC2010

GANFET N-CH 200V 12A DIE

EPC
2,617 -

RFQ

EPC2010

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Discontinued at Mosen N-Channel GaNFET (Gallium Nitride) 200 V 12A (Ta) 5V 25mOhm @ 6A, 5V 2.5V @ 3mA 7.5 nC @ 5 V +6V, -4V 540 pF @ 100 V - - -40°C ~ 125°C (TJ) Surface Mount
EPC2012

EPC2012

GANFET N-CH 200V 3A DIE

EPC
3,312 -

RFQ

EPC2012

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Discontinued at Mosen N-Channel GaNFET (Gallium Nitride) 200 V 3A (Ta) 5V 100mOhm @ 3A, 5V 2.5V @ 1mA 1.8 nC @ 5 V +6V, -5V 145 pF @ 100 V - - -40°C ~ 125°C (TJ) Surface Mount
EPC2014

EPC2014

GANFET N-CH 40V 10A DIE OUTLINE

EPC
2,712 -

RFQ

EPC2014

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Discontinued at Mosen N-Channel GaNFET (Gallium Nitride) 40 V 10A (Ta) 5V 16mOhm @ 5A, 5V 2.5V @ 2mA 2.8 nC @ 5 V +6V, -5V 325 pF @ 20 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2015

EPC2015

GANFET N-CH 40V 33A DIE OUTLINE

EPC
3,621 -

RFQ

EPC2015

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Discontinued at Mosen N-Channel GaNFET (Gallium Nitride) 40 V 33A (Ta) 5V 4mOhm @ 33A, 5V 2.5V @ 9mA 11.6 nC @ 5 V +6V, -5V 1200 pF @ 20 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2016

EPC2016

GANFET N-CH 100V 11A DIE

EPC
2,997 -

RFQ

EPC2016

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Discontinued at Mosen N-Channel GaNFET (Gallium Nitride) 100 V 11A (Ta) 5V 16mOhm @ 11A, 5V 2.5V @ 3mA 5.2 nC @ 5 V +6V, -5V 520 pF @ 50 V - - -40°C ~ 125°C (TJ) Surface Mount
EPC2018

EPC2018

GANFET N-CH 150V 12A DIE

EPC
2,322 -

RFQ

EPC2018

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Discontinued at Mosen N-Channel GaNFET (Gallium Nitride) 150 V 12A (Ta) 5V 25mOhm @ 6A, 5V 2.5V @ 3mA 7.5 nC @ 5 V +6V, -5V 540 pF @ 100 V - - -40°C ~ 125°C (TJ) Surface Mount
EPC2021ENGR

EPC2021ENGR

TRANS GAN 80V 60A BUMPED DIE

EPC
2,170 -

RFQ

EPC2021ENGR

Ficha técnica

Cut Tape (CT) eGaN® Obsolete N-Channel GaNFET (Gallium Nitride) 80 V 60A (Ta) 5V 2.5mOhm @ 29A, 5V 2.5V @ 14mA 15 nC @ 5 V +6V, -4V 1700 pF @ 40 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2025

EPC2025

GANFET N-CH 300V 4A DIE

EPC
2,127 -

RFQ

Tape & Reel (TR),Cut Tape (CT) eGaN® Obsolete N-Channel GaNFET (Gallium Nitride) 300 V 4A (Ta) 5V 150mOhm @ 3A, 5V 2.5V @ 1mA - +6V, -4V 194 pF @ 240 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2030ENGRT

EPC2030ENGRT

GANFET NCH 40V 31A DIE

EPC
3,633 -

RFQ

EPC2030ENGRT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Discontinued at Mosen N-Channel GaNFET (Gallium Nitride) 40 V 31A (Ta) 5V 2.4mOhm @ 30A, 5V 2.5V @ 16mA 18 nC @ 5 V +6V, -4V 1900 pF @ 20 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2031ENGRT

EPC2031ENGRT

GANFET NCH 60V 31A DIE

EPC
3,532 -

RFQ

EPC2031ENGRT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Discontinued at Mosen N-Channel GaNFET (Gallium Nitride) 60 V 31A (Ta) 5V 2.6mOhm @ 30A, 5V 2.5V @ 15mA 17 nC @ 5 V +6V, -4V 1800 pF @ 300 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2049ENGRT

EPC2049ENGRT

GANFET N-CH 40V 16A DIE

EPC
2,761 -

RFQ

EPC2049ENGRT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Obsolete N-Channel GaNFET (Gallium Nitride) 40 V 16A (Ta) 5V 5mOhm @ 15A, 5V 2.5V @ 6mA 7.6 nC @ 5 V +6V, -4V 805 pF @ 20 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2302ENGRT

EPC2302ENGRT

TRANS GAN 100V DIE .0019OHM

EPC
3,789 -

RFQ

EPC2302ENGRT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Obsolete N-Channel GaNFET (Gallium Nitride) 100 V 101A (Ta) 5V 1.8mOhm @ 50A, 5V 2.5V @ 14mA 23 nC @ 5 V +6V, -4V 3200 pF @ 50 V - - -40°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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