Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PMV62XN215

PMV62XN215

SMALL SIGNAL FET

NXP USA Inc.
9,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
PMN15UN115

PMN15UN115

SMALL SIGNAL FET

NXP USA Inc.
9,000 -

RFQ

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) - - - - - - - - - Surface Mount
PMDPB760EN115

PMDPB760EN115

SMALL SIGNAL FET

NXP USA Inc.
9,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
PH6530AL115

PH6530AL115

POWER FIELD-EFFECT TRANSISTOR

NXP USA Inc.
4,500 -

RFQ

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V - - - - - - - - - - Surface Mount
BUK6209-30C,118

BUK6209-30C,118

MOSFET N-CH 30V 50A DPAK

NXP USA Inc.
9,725 -

RFQ

BUK6209-30C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Ta) - 9.8mOhm @ 12A, 10V 2.8V @ 1mA 30.5 nC @ 10 V ±16V 1760 pF @ 25 V - 80W (Ta) -55°C ~ 175°C (TJ) Surface Mount
BUK6213-30A,118

BUK6213-30A,118

TRANSISTOR >30MHZ

NXP USA Inc.
4,990 -

RFQ

BUK6213-30A,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 55A (Tc) 10V 13mOhm @ 10A, 10V 3V @ 1mA 44 nC @ 10 V ±16V 1986 pF @ 25 V - 102W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7535-55A,127

BUK7535-55A,127

PFET, 35A I(D), 55V, 0.035OHM, 1

NXP USA Inc.
9,896 -

RFQ

BUK7535-55A,127

Ficha técnica

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 10V 35mOhm @ 20A, 10V 4V @ 1mA - ±20V 872 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7528-55A,127

BUK7528-55A,127

PFET, 42A I(D), 55V, 0.028OHM, 1

NXP USA Inc.
4,285 -

RFQ

BUK7528-55A,127

Ficha técnica

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 28mOhm @ 25A, 10V 4V @ 1mA - ±20V 1165 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN050-80BS,118

PSMN050-80BS,118

POWER FIELD-EFFECT TRANSISTOR, 2

NXP USA Inc.
3,200 -

RFQ

PSMN050-80BS,118

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 22A (Tc) 10V 46mOhm @ 10A, 10V 4V @ 1mA 11 nC @ 10 V ±20V 633 pF @ 12 V - 56W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7E13-60E,127

BUK7E13-60E,127

MOSFET N-CH 60V 58A I2PAK

NXP USA Inc.
1,470 -

RFQ

BUK7E13-60E,127

Ficha técnica

Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 58A (Ta) - 13mOhm @ 15A, 10V 4V @ 1mA 22.9 nC @ 10 V ±20V 1730 pF @ 25 V - 96W (Ta) -55°C ~ 175°C (TJ) Through Hole
BUK7507-30B,127

BUK7507-30B,127

PFET, 75A I(D), 30V, 0.007OHM, 1

NXP USA Inc.
4,611 -

RFQ

BUK7507-30B,127

Ficha técnica

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 10V 7mOhm @ 25A, 10V 4V @ 1mA 36 nC @ 10 V ±20V 2427 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7516-55A,127

BUK7516-55A,127

PFET, 65.7A I(D), 55V, 0.016OHM

NXP USA Inc.
4,353 -

RFQ

BUK7516-55A,127

Ficha técnica

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 65.7A (Tc) 10V 16mOhm @ 25A, 10V 4V @ 1mA - ±20V 2245 pF @ 25 V - 138W (Tc) -55°C ~ 175°C (TJ)
BUK7230-55A,118

BUK7230-55A,118

PFET, 38A I(D), 55V, 0.03OHM, 1-

NXP USA Inc.
6,270 -

RFQ

BUK7230-55A,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 38A (Tc) 10V 30mOhm @ 25A, 10V 4V @ 1mA - ±20V 1152 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9514-55A,127

BUK9514-55A,127

PFET, 73A I(D), 55V, 0.015OHM, 1

NXP USA Inc.
7,857 -

RFQ

BUK9514-55A,127

Ficha técnica

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 73A (Tc) 4.5V, 10V 13mOhm @ 25A, 10V 2V @ 1mA - ±10V 3307 pF @ 25 V - 149W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7511-55B,127

BUK7511-55B,127

MOSFET N-CH 55V 75A TO220AB

NXP USA Inc.
2,208 -

RFQ

BUK7511-55B,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 11mOhm @ 25A, 10V 4V @ 1mA 37 nC @ 10 V ±20V 2604 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK724R5-30C118

BUK724R5-30C118

N-CHANNEL POWER MOSFET

NXP USA Inc.
8,878 -

RFQ

BUK724R5-30C118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 10V 4.5mOhm @ 25A, 10V 4V @ 1mA 62 nC @ 10 V ±20V 3760 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9535-100A,127

BUK9535-100A,127

MOSFET N-CH 100V 41A TO220AB

NXP USA Inc.
4,000 -

RFQ

BUK9535-100A,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 41A (Tc) 4.5V, 10V 34mOhm @ 25A, 10V 2V @ 1mA - ±10V 3573 pF @ 25 V - 149W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7628-55A/C1118

BUK7628-55A/C1118

N-CHANNEL POWER MOSFET

NXP USA Inc.
1,600 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BUK9511-55A,127

BUK9511-55A,127

MOSFET N-CH 55V 75A TO220AB

NXP USA Inc.
2,002 -

RFQ

BUK9511-55A,127

Ficha técnica

Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Ta) - 10mOhm @ 25A, 10V 2V @ 1mA - ±10V 4230 pF @ 25 V - 166W (Ta) -55°C ~ 175°C (TJ) Through Hole
BUK7507-55B,127

BUK7507-55B,127

PFET, 119A I(D), 55V, 0.0071OHM

NXP USA Inc.
3,998 -

RFQ

BUK7507-55B,127

Ficha técnica

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7.1mOhm @ 25A, 10V 4V @ 1mA 53 nC @ 10 V ±20V 3760 pF @ 25 V - 203W (Tc) -55°C ~ 175°C (TJ)
Total 826 Record«Prev1234...42Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario