Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK754R0-40C,127

BUK754R0-40C,127

MOSFET N-CH 40V 100A TO220AB

NXP USA Inc.
989 -

RFQ

BUK754R0-40C,127

Ficha técnica

Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Ta) - 4mOhm @ 25A, 10V 4V @ 1mA 97 nC @ 10 V ±20V 5708 pF @ 25 V - 203W (Ta) -55°C ~ 175°C (TJ) Through Hole
PSMN8R5-100ESQ

PSMN8R5-100ESQ

POWER FIELD-EFFECT TRANSISTOR, 1

NXP USA Inc.
975 -

RFQ

PSMN8R5-100ESQ

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tj) 10V 8.5mOhm @ 25A, 10V 4V @ 1mA 111 nC @ 10 V ±20V 5512 pF @ 50 V - 263W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK954R4-40B127

BUK954R4-40B127

N-CHANNEL POWER MOSFET

NXP USA Inc.
2,000 -

RFQ

BUK954R4-40B127

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 4mOhm @ 25A, 10V 2V @ 1mA 64 nC @ 5 V ±15V 7124 pF @ 25 V - 254W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN8R5-108ES

PSMN8R5-108ES

N-CHANNEL POWER MOSFET

NXP USA Inc.
466 -

RFQ

PSMN8R5-108ES

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK754R0-55B,127

BUK754R0-55B,127

PFET, 75A I(D), 55V, 0.004OHM, 1

NXP USA Inc.
960 -

RFQ

BUK754R0-55B,127

Ficha técnica

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4mOhm @ 25A, 10V 4V @ 1mA 86 nC @ 10 V ±20V 6776 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
PH2230DLS115

PH2230DLS115

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.
7,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BUK7510-100B,127

BUK7510-100B,127

PFET, 75A I(D), 100V, 0.01OHM, 1

NXP USA Inc.
1,139 -

RFQ

BUK7510-100B,127

Ficha técnica

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 1mA 80 nC @ 10 V ±20V 6773 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK953R5-60E,127

BUK953R5-60E,127

MOSFET N-CH 60V 120A TO220AB

NXP USA Inc.
2,400 -

RFQ

BUK953R5-60E,127

Ficha técnica

Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Ta) - 3.4mOhm @ 25A, 10V 2.1V @ 1mA 95 nC @ 5 V ±10V 13490 pF @ 25 V - 293W (Ta) -55°C ~ 175°C (TJ) Through Hole
BUK6E2R0-30C127

BUK6E2R0-30C127

N-CHANNEL POWER MOSFET

NXP USA Inc.
4,728 -

RFQ

BUK6E2R0-30C127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 10V 2.2mOhm @ 25A, 10V 2.8V @ 1mA 229 nC @ 10 V ±16V 14964 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK751R8-40E127

BUK751R8-40E127

N-CHANNEL POWER MOSFET

NXP USA Inc.
784 -

RFQ

BUK751R8-40E127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.8mOhm @ 25A, 10V 4V @ 1mA 145 nC @ 10 V ±20V 11340 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9515-100A127

BUK9515-100A127

N-CHANNEL POWER MOSFET

NXP USA Inc.
8,000 -

RFQ

BUK9515-100A127

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 4.5V, 10V 14.4mOhm @ 25A, 10V 2V @ 1mA - ±10V 8600 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN7R8-120ESQ

PSMN7R8-120ESQ

POWER FIELD-EFFECT TRANSISTOR, 7

NXP USA Inc.
430 -

RFQ

PSMN7R8-120ESQ

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 120 V 70A (Tc) 10V 7.9mOhm @ 25A, 10V 4V @ 1mA 167 nC @ 10 V ±20V 9473 pF @ 60 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7510-55AL127

BUK7510-55AL127

N-CHANNEL POWER MOSFET

NXP USA Inc.
4,769 -

RFQ

BUK7510-55AL127

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 1mA 124 nC @ 10 V ±20V 6280 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK753R8-80E,127

BUK753R8-80E,127

TRANSISTOR >30MHZ

NXP USA Inc.
1,749 -

RFQ

BUK753R8-80E,127

Ficha técnica

Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 4mOhm @ 25A, 10V 4V @ 1mA 169 nC @ 10 V ±20V 12030 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN3R3-80ES,127

PSMN3R3-80ES,127

ELEMENT, NCHANNEL, SILICON, MOSF

NXP USA Inc.
1,415 -

RFQ

PSMN3R3-80ES,127

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 3.3mOhm @ 25A, 10V 4V @ 1mA 139 nC @ 10 V ±20V 9961 pF @ 40 V - 338W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7C06-40AITE,118

BUK7C06-40AITE,118

MOSFET N-CH 40V 75A D2PAK

NXP USA Inc.
3,200 -

RFQ

BUK7C06-40AITE,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 6mOhm @ 50A, 10V 4V @ 1mA 120 nC @ 10 V ±20V 4300 pF @ 25 V Current Sensing 272W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN1R9-40PL127

PSMN1R9-40PL127

N-CHANNEL POWER MOSFET

NXP USA Inc.
2,255 -

RFQ

PSMN1R9-40PL127

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMPB29XNE,115

PMPB29XNE,115

MOSFET N-CH 30V 5A DFN2020MD-6

NXP USA Inc.
8,996 -

RFQ

PMPB29XNE,115

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 5A (Ta) 1.8V, 4.5V 33mOhm @ 5A, 4.5V 900mV @ 250µA 18.6 nC @ 4.5 V ±12V 1150 pF @ 15 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PHB20N06T,118

PHB20N06T,118

MOSFET N-CH 55V 20.3A D2PAK

NXP USA Inc.
5,428 -

RFQ

PHB20N06T,118

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 20.3A (Tc) 10V 75mOhm @ 10A, 10V 4V @ 1mA 11 nC @ 10 V ±20V 483 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHB18NQ10T,118

PHB18NQ10T,118

MOSFET N-CH 100V 18A D2PAK

NXP USA Inc.
1,966 -

RFQ

PHB18NQ10T,118

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 10V 90mOhm @ 9A, 10V 4V @ 1mA 21 nC @ 10 V ±20V 633 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
Total 826 Record«Prev12345...42Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario