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Transistores - FET, MOSFET - Arreglos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EPC2106GANFET TRANS SYM 100V BUMPED DIE EPC |
3,249 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 1.7A | 70mOhm @ 2A, 5V | 2.5V @ 600µA | 0.73nC @ 5V | 75pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2110GANFET 2NCH 120V 3.4A DIE EPC |
2,627 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | - | -40°C ~ 150°C (TJ) | - |
|
EPC2104GAN TRANS SYMMETRICAL HALF BRIDG EPC |
3,389 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
EPC2102GAN TRANS SYMMETRICAL HALF BRIDG EPC |
2,394 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2107GANFET 3 N-CH 100V 9BGA EPC |
2,291 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 100V | 1.7A, 500mA | 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.16nC @ 5V, 0.044nC @ 5V | 16pF @ 50V, 7pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2221TRANS GAN DUAL 100V.11OHM 9BMPD EPC |
2,125 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 100V | 5A | - | - | - | - | - | 150°C (TJ) | Surface Mount |
|
|
EPC2103GAN TRANS SYMMETRICAL HALF BRIDG EPC |
2,299 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 28A | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2105GAN TRANS ASYMMETRICAL HALF BRID EPC |
2,712 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A, 38A | 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V | 2.5V @ 2.5mA, 2.5V @ 10mA | 2.5nC @ 5V, 10nC @ 5V | 300pF @ 40V, 1100pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
EPC2108GANFET 3 N-CH 60V/100V 9BGA EPC |
2,361 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 60V, 100V | 1.7A, 500mA | 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.22nC @ 5V, 0.044nC @ 5V | 22pF @ 30V, 7pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
EPC2100GAN TRANS ASYMMETRICAL HALF BRID EPC |
402 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
EPC2101GAN TRANS ASYMMETRICAL HALF BRID EPC |
193 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V | 2.5V @ 3mA, 2.5V @ 12mA | 2.7nC @ 5V, 12nC @ 5V | 300pF @ 30V, 1200pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
EPC2110ENGRTGAN TRANS 2N-CH 120V BUMPED DIE EPC |
2,023 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
EPC2111GAN TRANS ASYMMETRICAL HALF BRID EPC |
2,485 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 16A (Ta) | 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V | 2.5V @ 5mA | 2.2nC @ 5V, 5.7nC @ 5V | 230pF @ 15V, 590pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
EPC2100ENGRTGANFET 2 N-CH 30V 9.5A/38A DIE EPC |
3,792 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
EPC2106ENGRTGAN TRANS 2N-CH 100V BUMPED DIE EPC |
3,590 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Discontinued at Mosen | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 1.7A | 70mOhm @ 2A, 5V | 2.5V @ 600µA | 0.73nC @ 5V | 75pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
EPC2103ENGRTGANFET TRANS SYM HALF BRDG 80V EPC |
2,704 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Discontinued at Mosen | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 23A | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 7600pF @ 40V | - | - | Surface Mount |
|
|
EPC2104ENGRTGANFET 2NCH 100V 23A DIE EPC |
2,747 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Discontinued at Mosen | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
EPC2105ENGRTGANFET 2NCH 80V 9.5A DIE EPC |
3,625 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Discontinued at Mosen | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A | 14.5mOhm @ 20A, 5V | 2.5V @ 2.5mA | 2.5nC @ 5V | 300pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
EPC2101ENGRTGAN TRANS ASYMMETRICAL HALF BRID EPC |
2,673 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Discontinued at Mosen | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5mOhm @ 20A, 5V | 2.5V @ 2mA | 2.7nC @ 5V | 300pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
EPC2102ENGRTGANFET 2 N-CHANNEL 60V 23A DIE EPC |
2,322 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Discontinued at Mosen | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A (Tj) | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount |
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