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Transistores - FET, MOSFET - Arreglos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ALD1106SBLMOSFET 4N-CH 10.6V 14SOIC Advanced Linear Devices Inc. |
200 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
ALD1116SALMOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc. |
3,801 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD1117SALMOSFET 2P-CH 10.6V 8SOIC Advanced Linear Devices Inc. |
155 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD111933SALMOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc. |
300 | - |
RFQ |
Ficha técnica |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 5.9V | 3.35V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
ALD1116PALMOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc. |
133 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
ALD1107PBLMOSFET 4P-CH 10.6V 14DIP Advanced Linear Devices Inc. |
946 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 4 P-Channel, Matched Pair | Standard | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD1106PBLMOSFET 4N-CH 10.6V 14DIP Advanced Linear Devices Inc. |
701 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD1105PBLMOSFET 2N/2P-CH 10.6V 14DIP Advanced Linear Devices Inc. |
169 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 N and 2 P-Channel Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD1103PBLMOSFET 2N/2P-CH 10.6V 14DIP Advanced Linear Devices Inc. |
2,587 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 N and 2 P-Channel Matched Pair | Standard | 10.6V | 40mA, 16mA | 75Ohm @ 5V | 1V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD110900SALMOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc. |
822 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 4V | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD114913SALMOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc. |
249 | - |
RFQ |
Ficha técnica |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD1107SBLMOSFET 4P-CH 10.6V 14SOIC Advanced Linear Devices Inc. |
114 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 4 P-Channel, Matched Pair | Standard | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD1101PALMOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc. |
179 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
ALD110800ASCLMOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc. |
826 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD114835SCLMOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc. |
498 | - |
RFQ |
Ficha técnica |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD1115PALMOSFET N/P-CH 10.6V 8DIP Advanced Linear Devices Inc. |
2,006 | - |
RFQ |
Ficha técnica |
Tube | - | Active | N and P-Channel Complementary | Standard | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD110900APALMOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc. |
3,253 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
ALD110800APCLMOSFET 4N-CH 10.6V 16DIP Advanced Linear Devices Inc. |
2,345 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD1117PALMOSFET 2P-CH 10.6V 8DIP Advanced Linear Devices Inc. |
3,638 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD1105SBLMOSFET 2N/2P-CH 10.6V 14SOIC Advanced Linear Devices Inc. |
3,195 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 N and 2 P-Channel Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
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