Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBL01-E3/51

GBL01-E3/51

BRIDGE RECT 1PHASE 100V 3A GBL

Vishay General Semiconductor - Diodes Division
3,684 -

RFQ

GBL01-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 100 V 3 A 1.1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBU10D

GBU10D

BRIDGE RECT 1PHASE 200V 10A GBU

GeneSiC Semiconductor
3,984 -

RFQ

GBU10D

Ficha técnica

Bulk - Active Single Phase Standard 200 V 10 A 1.1 V @ 10 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4D

GBU4D

BRIDGE RECT 1PHASE 200V 4A GBU

onsemi
2,866 -

RFQ

GBU4D

Ficha técnica

Tube - Active Single Phase Standard 200 V 4 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4G-E3/51

GBU4G-E3/51

BRIDGE RECT 1PHASE 400V 3A GBU

Vishay General Semiconductor - Diodes Division
2,378 -

RFQ

GBU4G-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 400 V 3 A 1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4J-E3/51

GBU4J-E3/51

BRIDGE RECT 1PHASE 600V 4A GBU

Vishay General Semiconductor - Diodes Division
3,293 -

RFQ

GBU4J-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 600 V 4 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBJ1506-BP

GBJ1506-BP

BRIDGE RECT 1PHASE 600V 15A GBJ

Micro Commercial Co
3,330 -

RFQ

GBJ1506-BP

Ficha técnica

Tube - Active Single Phase Standard 600 V 15 A 1.05 V @ 7.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ1502-BP

GBJ1502-BP

BRIDGE RECT 1PHASE 200V 15A GBJ

Micro Commercial Co
2,774 -

RFQ

GBJ1502-BP

Ficha técnica

Tube - Active Single Phase Standard 200 V 15 A 1.05 V @ 7.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBU8J-E3/45

GBU8J-E3/45

BRIDGE RECT 1PHASE 600V 3.9A GBU

Vishay General Semiconductor - Diodes Division
877 -

RFQ

GBU8J-E3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 3.9 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8K-E3/51

GBU8K-E3/51

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division
3,876 -

RFQ

GBU8K-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8K-E3/45

GBU8K-E3/45

BRIDGE RECT 1PHASE 800V 3.9A GBU

Vishay General Semiconductor - Diodes Division
3,061 -

RFQ

GBU8K-E3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 3.9 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GSIB1520-E3/45

GSIB1520-E3/45

BRIDGE RECT 1P 200V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,676 -

RFQ

GSIB1520-E3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 3.5 A 950 mV @ 7.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB15A80-E3/45

GSIB15A80-E3/45

BRIDGE RECT 1P 800V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,197 -

RFQ

GSIB15A80-E3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 3.5 A 1 V @ 7.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB2540-E3/45

GSIB2540-E3/45

BRIDGE RECT 1P 400V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
591 -

RFQ

GSIB2540-E3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 3.5 A 1 V @ 12.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
BU2010-E3/51

BU2010-E3/51

BRIDGE RECT 1P 1KV 3.5A BU

Vishay General Semiconductor - Diodes Division
2,957 -

RFQ

BU2010-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 3.5 A 1.05 V @ 10 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU2506-M3/45

BU2506-M3/45

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
800 -

RFQ

BU2506-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
KBU4A-E4/51

KBU4A-E4/51

BRIDGE RECT 1PHASE 50V 4A KBU

Vishay General Semiconductor - Diodes Division
383 -

RFQ

KBU4A-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 50 V 4 A 1 V @ 4 A 5 µA @ 50 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU4G-E4/51

KBU4G-E4/51

BRIDGE RECT 1PHASE 400V 4A KBU

Vishay General Semiconductor - Diodes Division
132 -

RFQ

KBU4G-E4/51

Ficha técnica

Tray - Active Single Phase Standard 400 V 4 A 1 V @ 4 A 5 µA @ 400 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
GBPC2510W

GBPC2510W

BRIDGE RECT 1P 1KV 25A GBPC-W

SMC Diode Solutions
124 -

RFQ

GBPC2510W

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 25 A 1.1 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC2504W

GBPC2504W

BRIDGE RECT 1P 400V 25A GBPC-W

GeneSiC Semiconductor
3,196 -

RFQ

GBPC2504W

Ficha técnica

Bulk - Active Single Phase Standard 400 V 25 A 1.1 V @ 12.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC2508T

GBPC2508T

BRIDGE RECT 1PHASE 800V 25A GBPC

GeneSiC Semiconductor
3,107 -

RFQ

GBPC2508T

Ficha técnica

Bulk - Active Single Phase Standard 800 V 25 A 1.1 V @ 12.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
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1500+ Promedio diario de RFQ
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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